Abstract: An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial layer is different from a material of the first epitaxial layer. The interface treatment layer contacts the first epitaxial layer and the second epitaxial layer and is located between the first epitaxial layer and the second epitaxial layer. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of the TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

Abstract: An epitaxial structure includes a first epitaxial layer, a second epitaxial layer, and an interface treatment layer. The second epitaxial layer is disposed on the first epitaxial layer. The interface treatment layer is located between the first epitaxial layer and the second epitaxial layer and is in contact with the first epitaxial layer and the second epitaxial layer. The first epitaxial layer, the second epitaxial layer, and the interface treatment layer include the same material. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of a TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

Abstract: The present disclosure provides one embodiment of a method making semiconductor structure. The method includes forming a composite stress layer on a semiconductor substrate, wherein the forming of the composite stress layer includes forming a first stress layer of a dielectric material with a first compressive stress and forming a second stress layer of the dielectric material with a second compressive stress on the first stress layer, the second compressive stress being greater than the first compressive stress; and patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask.

Abstract: A micro light-emitting component including a first type cladding layer, a light-emitting layer, a second type cladding layer, a plurality of window layers and at least one interposer is provided. The light-emitting layer is located on the first type cladding layer, and the second type cladding layer is located on the light-emitting layer. The light-emitting layer is located between the first type cladding layer and the second type cladding layer. The window layers are located on the second type cladding layer. The interposer is located between any two adjacent of the window layers. An ion doping concentration of the interposer is less than or equal to an ion doping concentration of the window layers.

Abstract: A heating apparatus including a rotating stage, a plurality of wafer carriers, a plurality of first heaters, and at least one second heater is provided. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate around a rotating axis of the rotating stage. The plurality of first heaters is disposed under a first heating region, each have a first width Wa. There is a first spacing Sa between any two adjacent first heaters. The at least one second heater is disposed under a second heating region, and has a second width Wb. There is a smallest spacing Sab between the at least one second heater and the first heating region, and Wa, Wb, Sa and Sab satisfy the equation: Wa/(Wa+Sa) ? Wb/(Wb+Sab). Each wafer carrier overlaps the first heating region in the axial direction of the rotating axis.

Abstract: A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.

Abstract: Herein disclosed are a wafer, a wafer testing system, and a method thereof. Said wafer testing method comprises the following steps. First, an incident light is provided toward a wafer. And, a wafer surface image corresponded to the wafer is generated. Then, determining whether the wafer surface image has a plurality of first strips and a plurality of second strips, and the plurality of first strips and the plurality of second strips are symmetrical. When the wafer surface image has the plurality of first strips and the plurality of second strips, and the plurality of first strips and the plurality of second strips are symmetrical, a qualified signal corresponded to the wafer is provided.

Abstract: A heating apparatus including a rotating stage, a plurality of wafer carriers, a first heater, and a second heater is provided. The rotating stage includes a rotating axis. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate on the rotating axis. The first heater is disposed under the rotating stage. The first heater includes a first width in a radial direction of the rotating stage. The second heater is disposed under the rotating stage. The second heater and the first heater are separated from each other. The second heater includes a second width in the radial direction of the rotating stage, and the first width is not equal to the second width. A chemical vapor deposition (CVD) system using the heating apparatus is also provided.

Abstract: A micro light-emitting device has an epitaxial die having a top surface, a bottom surface and a plurality of sidewalls connected between the top surface and the bottom surface. A roughness of at least one part of the surface of at least one of the sidewalls is smaller than or equal to 10 nm, or an etch-pit density of the at least one part of the surface is smaller than 108/cm2, or a flatness tolerance of the at least one part of the surface is greater than 0.1 times a thickness of the epitaxial die. Therefore, the serious attenuation of the peak external quantum efficiency is prevented due to the sidewall damage effect after the light-emitting device is miniaturized.

Abstract: A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone is disposed around a center of the substrate. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.

Abstract: A semiconductor wafer carrier structure includes a carrier body having a surface; a protective film covering the surface; a susceptor disposed on the carrier body; and a patterned coating film on the susceptor, wherein the patterned coating film has two or more different thicknesses, wherein patterns of the patterned coating film are symmetrically distributed with respect to a center of the susceptor.

Abstract: A semiconductor wafer carrier structure is provided. The semiconductor wafer carrier structure includes a susceptor and a patterned heat conduction part disposed on the susceptor. At least a portion of the patterned heat conduction part has a different heat conduction coefficient than the susceptor. A metal-organic chemical vapor deposition equipment is also provided. The metal-organic chemical vapor deposition equipment includes a carrier body having a plurality of carrier units. The above semiconductor wafer carrier structure is placed in at least one of the carrier units.

Abstract: The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.

Abstract: A wafer carrier including a rotation axis, a center flat region, a wafer distributing region and a plurality of wafer accommodating grooves is provided. The rotation axis passes through a center of the center flat region and a surface of the center flat region is a flat surface. The wafer distributing region surrounds the center flat region. The plurality of wafer accommodating grooves are disposed in the wafer distributing region and arranged in a single virtual loop. A diameter of each of the wafer accommodating grooves is D, and a radius of the center flat region is larger than 0.5D. A wafer carrier and a metal organic chemical vapor deposition apparatus using any of the above two wafer carriers are further provided.

Abstract: A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.

Abstract: A tray structure adapted to a deposition apparatus is provided. The tray structure includes a first tray and a second tray, wherein the first tray is disposed on the deposition apparatus for control of temperature and includes a first carrying portion and at least one heat-conducting structure. The first carrying portion is disposed on a top surface of the first tray. The at least one heat-conducting structure is disposed in a recess of the first carrying portion. The second tray is disposed on the first carrying portion and the at least one heat-conducting structure.

Abstract: A micro light-emitting device includes an epitaxial structure layer, a first-type electrode, a second-type electrode, and a light guide structure. The epitaxial structure layer has a top surface and a bottom surface opposite to each other and a plurality of first grooves located on the top surface. The first-type electrode and the second-type electrode separated from each other are disposed on the epitaxial structure layer and located at the bottom surface. The light guide structure is disposed on the epitaxial structure layer. The light guide structure covers a portion of the top surface and a portion of inner walls of the first grooves to define a plurality of second grooves corresponding to the portion of the first grooves.

Abstract: A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone is disposed around a center of the substrate. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.

Abstract: A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone and the second zone are disposed in a concentric manner. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.