Patents by Inventor Yen-Lin Lai

Yen-Lin Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11329192
    Abstract: The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: May 10, 2022
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
  • Publication number: 20220064791
    Abstract: A wafer carrier including a rotation axis, a center flat region, a wafer distributing region and a plurality of wafer accommodating grooves is provided. The rotation axis passes through a center of the center flat region and a surface of the center flat region is a flat surface. The wafer distributing region surrounds the center flat region. The plurality of wafer accommodating grooves are disposed in the wafer distributing region and arranged in a single virtual loop. A diameter of each of the wafer accommodating grooves is D, and a radius of the center flat region is larger than 0.5D. A wafer carrier and a metal organic chemical vapor deposition apparatus using any of the above two wafer carriers are further provided.
    Type: Application
    Filed: November 11, 2021
    Publication date: March 3, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Shen-Jie Wang, Yen-Lin Lai, Jyun-De Wu, Chien-Chih Yen
  • Publication number: 20210399174
    Abstract: A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.
    Type: Application
    Filed: November 9, 2020
    Publication date: December 23, 2021
    Inventors: HSIN-CHIAO FANG, YEN-LIN LAI, JYUN-DE WU
  • Patent number: 11189577
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: November 30, 2021
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
  • Publication number: 20210327746
    Abstract: A tray structure adapted to a deposition apparatus is provided. The tray structure includes a first tray and a second tray, wherein the first tray is disposed on the deposition apparatus for control of temperature and includes a first carrying portion and at least one heat-conducting structure. The first carrying portion is disposed on a top surface of the first tray. The at least one heat-conducting structure is disposed in a recess of the first carrying portion. The second tray is disposed on the first carrying portion and the at least one heat-conducting structure.
    Type: Application
    Filed: May 25, 2020
    Publication date: October 21, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Chi-Heng Chen, Jyun-De Wu, Yen-Lin Lai
  • Patent number: 11133447
    Abstract: A micro light-emitting device includes an epitaxial structure layer, a first-type electrode, a second-type electrode, and a light guide structure. The epitaxial structure layer has a top surface and a bottom surface opposite to each other and a plurality of first grooves located on the top surface. The first-type electrode and the second-type electrode separated from each other are disposed on the epitaxial structure layer and located at the bottom surface. The light guide structure is disposed on the epitaxial structure layer. The light guide structure covers a portion of the top surface and a portion of inner walls of the first grooves to define a plurality of second grooves corresponding to the portion of the first grooves.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: September 28, 2021
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Kuang-Yuan Hsu, Chien-Chih Yen, Yen-Lin Lai
  • Publication number: 20210265527
    Abstract: A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone is disposed around a center of the substrate. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
    Type: Application
    Filed: April 29, 2021
    Publication date: August 26, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Kuang-Yuan Hsu, Chien-Chih Yen, Yen-Lin Lai, Shen-Jie Wang, Sheng-Yuan Sun
  • Patent number: 11063181
    Abstract: A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone and the second zone are disposed in a concentric manner. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: July 13, 2021
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Kuang-Yuan Hsu, Chien-Chih Yen, Yen-Lin Lai
  • Publication number: 20210148972
    Abstract: Herein disclosed are a wafer, a wafer testing system, and a method thereof. Said wafer testing method comprises the following steps. First, an incident light is provided toward a wafer. And, a wafer surface image corresponded to the wafer is generated. Then, determining whether the wafer surface image has a plurality of first strips and a plurality of second strips, and the plurality of first strips and the plurality of second strips are symmetrical.
    Type: Application
    Filed: June 9, 2020
    Publication date: May 20, 2021
    Inventors: Jyun-De WU, Yen-Lin LAI, Chi-Heng CHEN
  • Publication number: 20210134737
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.
    Type: Application
    Filed: April 6, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao FANG, Shen-Jie WANG, Yen-Lin LAI
  • Publication number: 20210135051
    Abstract: The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.
    Type: Application
    Filed: May 7, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao FANG, Shen-Jie WANG, Yen-Lin LAI
  • Publication number: 20210130957
    Abstract: A heating apparatus including a rotating stage, a plurality of wafer carriers, a first heater, and a second heater is provided. The rotating stage includes a rotating axis. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate on the rotating axis. The first heater is disposed under the rotating stage. The first heater includes a first width in a radial direction of the rotating stage. The second heater is disposed under the rotating stage. The second heater and the first heater are separated from each other. The second heater includes a second width in the radial direction of the rotating stage, and the first width is not equal to the second width. A chemical vapor deposition (CVD) system using the heating apparatus is also provided.
    Type: Application
    Filed: May 7, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Jyun-De Wu, Yen-Lin Lai, Chi-Heng Chen
  • Publication number: 20210130958
    Abstract: A heating apparatus including a rotating stage, a plurality of wafer carriers, a plurality of first heaters, and at least one second heater is provided. The rotating stage includes a rotating axis. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate by taking the rotating axis as a center. The plurality of first heaters is disposed under a first heating region of the rotating stage. There is a first spacing between any two adjacent first heaters. The at least one second heater is disposed under a second heating region of the rotating stage. There is a spacing between the second heating region and the first heating region, and the spacing is not equal to the first spacing. A chemical vapor deposition (CVD) system using the heating apparatus is also provided.
    Type: Application
    Filed: May 19, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Jyun-De Wu, Yen-Lin Lai, Chi-Heng Chen
  • Publication number: 20200373460
    Abstract: A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone and the second zone are disposed in a concentric manner. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
    Type: Application
    Filed: October 31, 2019
    Publication date: November 26, 2020
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Kuang-Yuan Hsu, Chien-Chih Yen, Yen-Lin Lai
  • Publication number: 20200350473
    Abstract: A micro light-emitting device includes an epitaxial structure layer, a first-type electrode, a second-type electrode, and a light guide structure. The epitaxial structure layer has a top surface and a bottom surface opposite to each other and a plurality of first grooves located on the top surface. The first-type electrode and the second-type electrode separated from each other are disposed on the epitaxial structure layer and located at the bottom surface. The light guide structure is disposed on the epitaxial structure layer. The light guide structure covers a portion of the top surface and a portion of inner walls of the first grooves to define a plurality of second grooves corresponding to the portion of the first grooves.
    Type: Application
    Filed: October 31, 2019
    Publication date: November 5, 2020
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Kuang-Yuan Hsu, Chien-Chih Yen, Yen-Lin Lai
  • Patent number: 10431710
    Abstract: A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 1018 atoms/cm3 or between 1017 atoms/cm3 and 1018 atoms/cm3. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 1017 atoms/cm3.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: October 1, 2019
    Assignee: PLAYNITRIDE INC.
    Inventors: Jyun-De Wu, Shen-Jie Wang, Yen-Lin Lai
  • Patent number: 10411159
    Abstract: A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: September 10, 2019
    Assignee: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Shen-Jie Wang, Jyun-De Wu, Chien-Chih Yen
  • Patent number: 10381511
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm ?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: August 13, 2019
    Assignee: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu, Yu-Chu Li
  • Publication number: 20190144996
    Abstract: A wafer carrier including a rotation axis, a center flat region, a wafer distributing region, and a plurality of wafer accommodating grooves is provided. The rotation axis passes through the center of the center flat region. The wafer distributing region surrounds the center flat region. The plurality of wafer accommodating grooves are disposed in the wafer distributing region. The diameter of each of the wafer accommodation grooves is D, and the radius of the center flat region is 0.5D to 3D. A surface of the center flat region is a flat surface. A wafer carrier and a metal organic chemical vapor deposition apparatus using any of the above two wafer carriers are further provided.
    Type: Application
    Filed: November 15, 2018
    Publication date: May 16, 2019
    Applicant: PixeLED Display CO., LTD.
    Inventors: Shen-Jie Wang, Yen-Lin Lai, Jyun-De Wu, Chien-Chih Yen
  • Publication number: 20180351032
    Abstract: A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 1018 atoms/cm3 or between 1017 atoms/cm3 and 1018 atoms/cm3. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 1017 atoms/cm3.
    Type: Application
    Filed: July 26, 2017
    Publication date: December 6, 2018
    Applicant: PLAYNITRIDE INC.
    Inventors: Jyun-De WU, Shen-Jie WANG, Yen-Lin LAI