Abstract: A circuit includes an operational amplifier configured to output a driving signal according to a feedback voltage associated with an output voltage and a reference voltage, a pass gate circuit comprising switches in current paths, and hysteresis comparators connected to the operational amplifier and configured to generate control signals to separately turn on or off the switches in the current paths in response to the driving signal.

Abstract: A device tray including an inner tray, an enclosure, a linkage assembly, and a handle assembly is disclosed. The inner tray has a first base and walls defining a first receptacle adapted for receiving an electronic device. The enclosure has a second base and walls defining a second receptacle adapted for slidably retaining the inner tray. The linkage assembly includes a first linking member hingeably coupled to the second base, a second linking member coupled with the first linking member at a hinged joint, and a slider movably coupled with the second base along a linear path. The slider is hingeably coupled to the second linking member. The handle assembly is coupled to the slider and causing, in response to a manual force, the slider to move along the linear path and rotate the enclosure between a closed position and an open position.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: The present disclosure provides an adapter bracket, which includes a first portion, a second portion and a third portion. The first portion includes a protruding portion extending from a first bottom surface of the first portion in a direction perpendicular to the first bottom surface. The second portion, has an elevation with respect to the first bottom surface of the first portion. The second portion comprising a first hole. The third portion extends between the first portion and the second portion.

Abstract: A device tray including an inner tray, an enclosure, a linkage assembly, and a handle assembly is disclosed. The inner tray has a first base and walls defining a first receptacle adapted for receiving an electronic device. The enclosure has a second base and walls defining a second receptacle adapted for slidably retaining the inner tray. The linkage assembly includes a first linking member hingeably coupled to the second base, a second linking member coupled with the first linking member at a hinged joint, and a slider movably coupled with the second base along a linear path. The slider is hingeably coupled to the second linking member. The handle assembly is coupled to the slider and causing, in response to a manual force, the slider to move along the linear path and rotate the enclosure between a closed position and an open position.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

Abstract: An RC triggered ESD protection device comprises a discharge transistor, a driver circuit and a trigger circuit. The trigger circuit comprises a plurality of native NMOS transistors connected in parallel with a plurality of PMOS transistors operating as resistors. The relatively small resistance of the plurality of native NMOS transistors helps to keep a stable RC time constant value so that the ESD protection device can avoid a leakage current during a power up operation.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

Abstract: An RC triggered ESD protection device comprises a discharge transistor, a driver circuit and a trigger circuit. The trigger circuit comprises a plurality of native NMOS transistors connected in parallel with a plurality of PMOS transistors operating as resistors. The relatively small resistance of the plurality of native NMOS transistors helps to keep a stable RC time constant value so that the ESD protection device can avoid a leakage current during a power up operation.