Patents by Inventor Yen Ling Lee

Yen Ling Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240118178
    Abstract: A staining kit is provided, including a first pattern including antibodies against T cell, B cell, NK cell, monocyte, regulatory cell, CD8, CD45, and CTLA4; a second pattern including antibodies against T cell, B cell, NK cell, monocyte, regulatory cell, dendritic cell, and CD45; a third pattern including antibodies against T cell, B cell, NK cell, monocyte, CD8, CD45, CD45RA, CD62L, CD197, CX3CR1 and TCR??; and a fourth pattern including antibodies against B cell, CD23, CD38, CD40, CD45 and IgM, wherein the antibodies of each pattern are labeled with fluorescent dyes. A method of identifying characterized immune cell subsets of a disease and a method of predicting the likelihood of NPC in a subject in the need thereof using the staining kit are also provided.
    Type: Application
    Filed: October 5, 2022
    Publication date: April 11, 2024
    Applicant: FULLHOPE BIOMEDICAL CO., LTD.
    Inventors: Jan-Mou Lee, Li-Jen Liao, Yen-Ling Chiu, Chih-Hao Fang, Kai-Yuan Chou, Pei-Hsien Liu, Cheng-Yun Lee
  • Publication number: 20240087980
    Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.
    Type: Application
    Filed: February 17, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kai-Fang CHENG, Cherng-Shiaw TSAI, Cheng-Chin LEE, Yen-Ju WU, Yen-Pin HSU, Li-Ling SU, Ming-Hsien LIN, Hsiao-Kang CHANG
  • Publication number: 20240081081
    Abstract: A ferroelectric memory device and a semiconductor die are provided. The ferroelectric memory device includes a gate electrode; a channel layer, overlapped with the gate electrode; source/drain contacts, in contact with separate ends of the channel layer; a ferroelectric layer, lying between the gate electrode and the channel layer; and a first insertion layer, extending in between the ferroelectric layer and the channel layer, and comprising a metal carbonitride or a metal nitride.
    Type: Application
    Filed: January 10, 2023
    Publication date: March 7, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ya-Ling Lee, Chung-Te Lin, Han-Ting Tsai, Wei-Gang Chiu, Yen-Chieh Huang, Ming-Yi Yang
  • Publication number: 20080124707
    Abstract: The present invention provides a method of manipulating nucleic acids. In particular, of length-controlled concatenating of nucleotide fragments, the method comprising: (a) providing at least two nucleotide fragments, wherein each fragment has one ligatable end and one non-ligatable end; and (b) allowing the two fragments to ligate at the ligatable ends to form an oligonucleotide comprising at least two concatenated nucleotide fragments. The present invention also provides an isolated oligonucleotide comprising at least two nucleotide fragments, wherein each fragment has at least one ligatable end and and one non-ligatable end, and the fragments are ligated at the ligatable ends to form the oligonucleotide.
    Type: Application
    Filed: June 9, 2006
    Publication date: May 29, 2008
    Applicant: Agency for Science, Technology and Research
    Inventors: Yijun Ruan, Patrick Ng, Melissa Jane Fullwood, Yen Ling Lee