Patents by Inventor Yen-Lun Huang
Yen-Lun Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11705489Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.Type: GrantFiled: December 19, 2018Date of Patent: July 18, 2023Assignee: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen Lun Huang, Chih-Yuan Chuang, Che Ming Liu, Wen-Ching Hsu, Manhsuan Lin
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Publication number: 20230215924Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.Type: ApplicationFiled: March 9, 2023Publication date: July 6, 2023Applicant: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen Lun Huang, Chih-Yuan Chuang, Che Ming Liu, Wen-Ching Hsu, Manhsuan Lin
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Patent number: 11588015Abstract: An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al(1-x)InxN, where 0?x?1. A maximum value of the x value in the plurality of regions is the same, a minimum value of the x value in the plurality of regions is the same, and an absolute value of a gradient slope of each of the regions is 0.1%/nm to 50%/nm. A thickness of the nucleation layer is less than a thickness of the buffer layer. A roughness of a surface of the nucleation layer in contact with the buffer layer is greater than a roughness of a surface of the buffer layer in contact with the nitride layer.Type: GrantFiled: March 9, 2022Date of Patent: February 21, 2023Assignee: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
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Patent number: 11588014Abstract: An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al(1?x)InxN, where 0?x?1. A maximum value of the x value in the regions decreases along the thickness direction, and the x value in the chemical composition of each two regions consists of a fixed region and a gradient region, wherein a gradient slope of the gradient regions is ?0.1%/nm to ?50%/nm, and a stepwise slope of the fixed regions is ?0.1%/loop to ?50%/loop. A thickness of the nucleation layer is less than that of the buffer layer. A surface roughness of the nucleation layer in contact with the buffer layer is greater than that of the buffer layer in contact with the nitride layer.Type: GrantFiled: March 9, 2022Date of Patent: February 21, 2023Assignee: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
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Patent number: 11532700Abstract: An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer orderly. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al(1?x)InxN, where 0?x?1. The x value consists of four sections of variation along the thickness direction, in which a first fixed region has a maximum value, a first gradient region gradually changes from the maximum value to a minimum value, a second fixed region has the minimum value, and a second gradient region gradually changes from the minimum value to the maximum value. An absolute value of a gradient slope of the first and second gradient regions is 0.1%/nm to 50%/nm. A surface roughness of the nucleation layer in contact with the buffer layer is greater than that of the buffer layer in contact with the nitride layer.Type: GrantFiled: March 9, 2022Date of Patent: December 20, 2022Assignee: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
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Publication number: 20220199762Abstract: An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer orderly. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al(1?x)InxN, where 0?x?1. The x value consists of four sections of variation along the thickness direction, in which a first fixed region has a maximum value, a first gradient region gradually changes from the maximum value to a minimum value, a second fixed region has the minimum value, and a second gradient region gradually changes from the minimum value to the maximum value. An absolute value of a gradient slope of the first and second gradient regions is 0.1%/nm to 50%/nm. A surface roughness of the nucleation layer in contact with the buffer layer is greater than that of the buffer layer in contact with the nitride layer.Type: ApplicationFiled: March 9, 2022Publication date: June 23, 2022Applicant: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
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Publication number: 20220199761Abstract: An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al(1?X)InXN, where 0?x?1. A maximum value of the x value in the regions decreases along the thickness direction, and the x value in the chemical composition of each two regions consists of a fixed region and a gradient region, wherein a gradient slope of the gradient regions is ?0.1%/nm to ?50%/nm, and a stepwise slope of the fixed regions is ?0.1%/loop to ?50%/loop. A thickness of the nucleation layer is less than that of the buffer layer. A surface roughness of the nucleation layer in contact with the buffer layer is greater than that of the buffer layer in contact with the nitride layer.Type: ApplicationFiled: March 9, 2022Publication date: June 23, 2022Applicant: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
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Publication number: 20220199763Abstract: An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al(1-x)InxN, where 0?x?1. A maximum value of the x value in the plurality of regions is the same, a minimum value of the x value in the plurality of regions is the same, and an absolute value of a gradient slope of each of the regions is 0.1%/nm to 50%/nm. A thickness of the nucleation layer is less than a thickness of the buffer layer. A roughness of a surface of the nucleation layer in contact with the buffer layer is greater than a roughness of a surface of the buffer layer in contact with the nitride layer.Type: ApplicationFiled: March 9, 2022Publication date: June 23, 2022Applicant: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
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Patent number: 11316007Abstract: An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer. The nucleation layer is disposed on the substrate, and the nucleation layer consists of a plurality of regions in a thickness direction, wherein a chemical composition of the region is Al(1?x)InxN, where 0?x?1. The buffer layer is disposed on the nucleation layer, and a thickness of the nucleation layer is less than a thickness of the buffer layer. The nitride layer is disposed on the buffer layer, wherein a roughness of a surface of the nucleation layer in contact with the buffer layer is greater than a roughness of a surface of the buffer layer in contact with the nitride layer.Type: GrantFiled: June 26, 2019Date of Patent: April 26, 2022Assignee: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
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Publication number: 20210017669Abstract: Provided is a semiconductor epitaxial structure including a nucleation layer disposed on a substrate; a buffer layer disposed on the nucleation layer; a semiconductor layer disposed on the buffer layer; a barrier layer disposed on the semiconductor layer; and a cap layer disposed on the barrier layer. In a case where a bowing of the semiconductor epitaxial structure is less than or equal to +/?30 ?m, a maximum value or a minimum value of a ratio of a thickness of the buffer layer to a thickness of the semiconductor layer is represented as following formula: Y=aX1?bX2+cX3, X1?0 nm, X2?750 nm, X3?515 nm, wherein X1 is a thickness of the nucleation layer, X2 is the thickness of the buffer layer, X3 is the thickness of the semiconductor layer, a, b and c are constants respectively, and Y is a ratio of X3 to X2.Type: ApplicationFiled: July 2, 2020Publication date: January 21, 2021Applicant: GlobalWafers Co., Ltd.Inventors: Yen-Lun Huang, Ke-Hong Su, Ying-Ru Shih
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Patent number: 10629718Abstract: An epitaxial structure includes a substrate, a buffer layer, a channel layer, an intermediate layer, and a barrier layer. The buffer layer is disposed on the substrate, the channel layer is disposed on the buffer layer, the barrier layer is disposed on the channel layer, and the intermediate layer is disposed between the channel layer and the barrier layer. The chemical composition of the barrier layer is Alx1Iny1Gaz1N, and the chemical composition of the intermediate layer is Alx2Iny2Gaz2N. The lattice constant of the barrier layer is greater than the lattice constant of the intermediate layer. The aluminum (Al) content of at least a portion of the intermediate layer is greater than the Al content of the barrier layer.Type: GrantFiled: November 22, 2018Date of Patent: April 21, 2020Assignee: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
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Publication number: 20200098907Abstract: An epitaxial structure includes a substrate, a buffer layer, a channel layer, an intermediate layer, and a barrier layer. The buffer layer is disposed on the substrate, the channel layer is disposed on the buffer layer, the barrier layer is disposed on the channel layer, and the intermediate layer is disposed between the channel layer and the barrier layer. The chemical composition of the barrier layer is Alx1Iny1Gaz1N, and the chemical composition of the intermediate layer is Alx2Iny2Gaz2N. The lattice constant of the barrier layer is greater than the lattice constant of the intermediate layer. The aluminum (Al) content of at least a portion of the intermediate layer is greater than the Al content of the barrier layer.Type: ApplicationFiled: November 22, 2018Publication date: March 26, 2020Applicant: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
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Publication number: 20200044015Abstract: An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer. The nucleation layer is disposed on the substrate, and the nucleation layer consists of a plurality of regions in a thickness direction, wherein a chemical composition of the region is Al(1?x)InxN, where 0?x?1. The buffer layer is disposed on the nucleation layer, and a thickness of the nucleation layer is less than a thickness of the buffer layer. The nitride layer is disposed on the buffer layer, wherein a roughness of a surface of the nucleation layer in contact with the buffer layer is greater than a roughness of a surface of the buffer layer in contact with the nitride layer.Type: ApplicationFiled: June 26, 2019Publication date: February 6, 2020Applicant: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
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Patent number: 10490432Abstract: A wafer carrier for processing a plurality of wafers includes a carrier body which rotatable about a central axis, and a plurality of pockets formed in the carrier body. Each of the pockets has an access opening and an inner periphery surface extending from the access opening to terminate at a floor surface. A lower periphery region of the inner periphery surface has a most distal region which is most distal from the central axis. When the carrier body is rotated about the central axis, a corresponding one of the wafers is less likely to be damaged due to a centrifugal force applied to the corresponding one of the wafers.Type: GrantFiled: March 12, 2017Date of Patent: November 26, 2019Assignee: GlobalWafers Co., Ltd.Inventors: Yen-Lun Huang, Chien-Jen Sun, Ying-Ru Shih, Wen-Ching Hsu
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Patent number: 10438794Abstract: A semiconductor device including a substrate, a semiconductor layer, and a buffer structure is provided. The semiconductor layer is located on the substrate. The buffer structure is located between the substrate and the semiconductor layer. The buffer structure includes a plurality of first layers and a plurality of second layers. The first layers and the second layers are alternately stacked with a same pitch or different pitches.Type: GrantFiled: February 2, 2018Date of Patent: October 8, 2019Assignee: GlobalWafers Co., Ltd.Inventors: Yen-Lun Huang, Jia-Zhe Liu, Man-Hsuan Lin
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Publication number: 20190221648Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.Type: ApplicationFiled: December 19, 2018Publication date: July 18, 2019Applicant: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen Lun Huang, Chih-Yuan Chuang, Che Ming Liu, Wen-Ching Hsu, Manhsuan Lin
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Patent number: 10211297Abstract: A heterostructure includes a substrate; an intermediate layer disposed on the substrate; and a group III-V layer having a first primary surface disposed on the intermediate layer and a dopant concentration that varies in a manner including a plurality of ramps with at least one of increasing dopant concentration and decreasing dopant concentration, along the growth direction from the first primary surface throughout the layer's thickness before terminating in a second primary surface.Type: GrantFiled: May 3, 2017Date of Patent: February 19, 2019Assignee: GlobalWafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen Lun Huang, Manhsuan Lin
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Publication number: 20190006178Abstract: A semiconductor device including a substrate, a semiconductor layer, and a buffer structure is provided. The semiconductor layer is located on the substrate. The buffer structure is located between the substrate and the semiconductor layer. The buffer structure includes a plurality of first layers and a plurality of second layers. The first layers and the second layers are alternately stacked with a same pitch or different pitches.Type: ApplicationFiled: February 2, 2018Publication date: January 3, 2019Applicant: GlobalWafers Co., Ltd.Inventors: Yen-Lun Huang, Jia-Zhe Liu, Man-Hsuan Lin
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Publication number: 20180323265Abstract: A heterostructure includes a substrate; an intermediate layer disposed on the substrate; and a group III-V layer having a first primary surface disposed on the intermediate layer and a dopant concentration that varies in a manner including a plurality of ramps with at least one of increasing dopant concentration and decreasing dopant concentration, along the growth direction from the first primary surface throughout the layer's thickness before terminating in a second primary surface.Type: ApplicationFiled: May 3, 2017Publication date: November 8, 2018Applicant: Global Wafers Co., Ltd.Inventors: Jia-Zhe Liu, Yen Lun Huang, Manhsuan Lin
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Publication number: 20170263482Abstract: A wafer carrier for processing a plurality of wafers includes a carrier body which rotatable about a central axis, and a plurality of pockets formed in the carrier body. Each of the pockets has an access opening and an inner periphery surface extending from the access opening to terminate at a floor surface. A lower periphery region of the inner periphery surface has a most distal region which is most distal from the central axis. When the carrier body is rotated about the central axis, a corresponding one of the wafers is less likely to be damaged due to a centrifugal force applied to the corresponding one of the wafers.Type: ApplicationFiled: March 12, 2017Publication date: September 14, 2017Inventors: Yen-Lun Huang, Chien-Jen Sun, Ying-Ru Shih, Wen-Ching Hsu