Abstract: A semiconductor package includes a substrate having thereon a high-frequency chip and a circuit component susceptible to high-frequency signal interference; a ground pad on the and between the high-frequency chip and the circuit component; a metal-post reinforced glue wall on the ground pad; a molding compound surrounding the metal-post reinforced glue wall and surrounding the high-frequency chip and the circuit component; and a conductive layer disposed on the molding compound and in contact with the metal-post reinforced glue wall. The metal-post reinforced glue wall comprises first metal posts and glue attached to the first metal posts. An interface between a base of each of the first metal posts and the ground pad has a root mean square (RMS) roughness that is less than 1.0 micrometer.

Abstract: A semiconductor package includes a substrate having a semiconductor chip disposed on a top surface of the substrate, a ground ring surrounding the semiconductor chip on the top surface of the substrate, a metal-post reinforced glue wall disposed on the ground ring to surround the semiconductor chip, and a molding compound disposed only inside the metal-post reinforced glue wall and covering the semiconductor chip. The metal-post reinforced glue wall comprises a magnetic or magnetizable filler so as to form an active electro-magnetic compatibility (EMC) shielding.

Abstract: A semiconductor package includes a substrate having at least one semiconductor chip on a top surface of the substrate; a ground ring, on the top surface of the substrate, surrounding the at least one semiconductor chip; a metal-post reinforced glue wall disposed on the ground ring, surrounding the at least one semiconductor chip; a molding compound surrounding the at least one semiconductor chip, wherein a rear surface of the at least one semiconductor chip is flush with an upper surface of the molding compound; a conductive layer disposed on the molding compound and in direct contact with the rear surface of the semiconductor chip and the metal-post reinforced glue wall; a solder layer disposed on the conductive layer; and a heat sink disposed on the solder layer.

Abstract: A semiconductor package includes a substrate. A high-frequency chip and a circuit component susceptible to high-frequency interference are disposed on a top surface of the substrate. A first ground ring is disposed on the substrate around the high-frequency chip. A first metal-post reinforced glue wall is disposed on the first ground ring to surround the high-frequency chip. A second ground ring is disposed on the top of the substrate around the circuit component. A second metal-post reinforced glue wall is disposed on the second ground ring to surround the circuit component. Mold-flow channels are disposed in the first and second metal-post reinforced glue walls. A molding compound covers at least the high-frequency chip and the circuit component. A conductive layer is disposed on the molding compound and is coupled to the first metal-post reinforced glue wall and/or the second metal-post reinforced glue wall.

Abstract: A semiconductor package includes a substrate having thereon a high-frequency chip and a circuit component susceptible to high-frequency signal interference; a ground pad on the and between the high-frequency chip and the circuit component; a metal-post reinforced glue wall on the ground pad; a molding compound surrounding the metal-post reinforced glue wall and surrounding the high-frequency chip and the circuit component; and a conductive layer disposed on the molding compound and in contact with the metal-post reinforced glue wall. The metal-post reinforced glue wall comprises first metal posts and glue attached to the first metal posts. An interface between a base of each of the first metal posts and the ground pad has a root mean square (RMS) roughness that is less than 1.0 micrometer.

Abstract: A semiconductor package includes a substrate having at least one semiconductor chip on a top surface of the substrate; a ground ring, on the top surface of the substrate, surrounding the at least one semiconductor chip; a metal-post reinforced glue wall disposed on the ground ring, surrounding the at least one semiconductor chip; a molding compound surrounding the at least one semiconductor chip, wherein a rear surface of the at least one semiconductor chip is flush with an upper surface of the molding compound; a conductive layer disposed on the molding compound and in direct contact with the rear surface of the semiconductor chip and the metal-post reinforced glue wall; a solder layer disposed on the conductive layer; and a heat sink disposed on the solder layer.

Abstract: A semiconductor package includes a substrate. A high-frequency chip and a circuit component susceptible to high-frequency interference are disposed on a top surface of the substrate. A first ground ring is disposed on the substrate around the high-frequency chip. A first metal-post reinforced glue wall is disposed on the first ground ring to surround the high-frequency chip. A second ground ring is disposed on the top of the substrate around the circuit component. A second metal-post reinforced glue wall is disposed on the second ground ring to surround the circuit component. Mold-flow channels are disposed in the first and second metal-post reinforced glue walls. A molding compound covers at least the high-frequency chip and the circuit component. A conductive layer is disposed on the molding compound and is coupled to the first metal-post reinforced glue wall and/or the second metal-post reinforced glue wall.

Abstract: A semiconductor package includes a substrate having a semiconductor chip disposed on a top surface of the substrate, a ground ring surrounding the semiconductor chip on the top surface of the substrate, a metal-post reinforced glue wall disposed on the ground ring to surround the semiconductor chip, and a molding compound disposed only inside the metal-post reinforced glue wall and covering the semiconductor chip. The metal-post reinforced glue wall comprises a magnetic or magnetizable filler so as to form an active electro-magnetic compatibility (EMC) shielding.