Patents by Inventor Yen-Min Hsieh

Yen-Min Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • AMBIPOLAR TRANSISTOR DEVICE STRUCTURE AND METHOD OF FORMING THE SAME
    Publication number: 20130153903
    Abstract: An ambipolar transistor device structure suitable for use in an integrated circuit is disclosed. An electron blocking layer or a hole blocking layer is interposed between a source/drain and an ambipolar active layer. Therefore, a unipolar device electric property may be extracted from the ambipolar active layer, which may be suitably applied to the design of a logic circuit. The manufacturing method of the disclosure is simple, only needing one patterning step, so as to effectively improve the performance of the ambipolar device.
    Type: Application
    Filed: April 20, 2012
    Publication date: June 20, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chao-Feng Sung, Yen-Min Hsieh
  • AMBIPOLAR INVERTER DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130153864
    Abstract: An ambipolar inverter device suitable for use in an integrated circuit. An electron blocking layer and a hole blocking layer are respectively disposed at two sides of the ambipolar semiconductor layer, so that the operation of the inverter may be executed in a single device. In addition, the manufacturing method of the disclosure is simple, adopting only one patterning step, so as to effectively improve the performance of the ambipolar device.
    Type: Application
    Filed: April 24, 2012
    Publication date: June 20, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chao-Feng Sung, Yen-Min Hsieh