Abstract: A resistive switching device includes a substrate, a first dielectric layer on the substrate, a conductive via in the first dielectric layer, a bottom electrode on the conductive via and the first dielectric layer, a resistive switching layer on the bottom electrode, a spacer covering a sidewall of the resistive switching layer and a sidewall of the bottom electrode, and a top electrode capping the spacer and the resistive switching layer.

Abstract: A semiconductor device and a method for forming the same are provided. The semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first electrode, a second electrode on one side of the first electrode, and a resistive switching film between the first electrode and the second electrode. The first electrode, the resistive switching film and the second electrode are arranged along the first direction. The second semiconductor structure includes a first via and a first metal layer on the first via along a second direction and electrically connected to the first via. The first direction is perpendicular to the second direction. An upper surface of the first electrode, an upper surface of the second electrode, an upper surface of the resistive switching film and an upper surface of the first metal layer are coplanar.