Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

Abstract: A method for trimming a micro electronic element includes: providing a substrate, wherein at least one micro electronic element is disposed on the substrate, heating an interface of the substrate and the micro electronic element by a first pulse laser beam to reduce a bonding force between the micro electronic element and the substrate, and irradiating a surface layer of the micro electronic element by a second pulse laser beam to generate a shock wave due to plasma on the surface layer of the micro electronic element. The shock wave removes the micro electronic element away from the substrate. An apparatus for trimming a micro electronic element is also provided.

Abstract: A laser apparatus with synchronous light path delay comprises a laser path adjustment unit and a gantry-type machine. The gantry-type machine drives a machining head to move two-dimensionally or three-dimensionally which will induce a light path length change defined by the total moving distance of the machining head. The laser path adjustment unit synchronously adjusts the traveling distance of a laser beam traveling to the machining head according to the total moving distance of the machining head. In this way, the focus spot size of the laser beam inputted from the machining head remains unchanged and the focus spot remains on a flat surface.