Abstract: High speed semiconductor rectifiers are fabricated by providing a rectifier, increasing the temperature thereof to a relatively high value, irradiating the rectifier with high energy lattice-damage causing particles while maintaining the relatively high temperature, and annealing the irradiated rectifier at a temperature and for a time sufficient to decrease the leakage current of the rectifier to a low value without substantially increasing the reverse recovery time of the rectifier.

Abstract: Disclosed is a double side cooled, pressure mounted semiconductor package and a method for the manufacture thereof. The package is formed by directly bonding upper and lower metal contact assemblies to an annular ceramic housing. Assembly is simplified if at least one contact assembly comprises two parts applied sequentially. An annular flange having a central opening approximately the size of the central opening in the annular housing and having an outside diameter larger than the outside diameter of the ceramic housing is direct bonded to one end of the housing simultaneously with a lower semiconductor contact. After a conventional semiconductor pellet is positioned in the housing, the second part, a metal contact disc with an outside diameter approximately equaling the outside diameter of the flange, is positioned thereover. Finally, the flange and the disc are welded around their peripheries.