Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.

Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.

Abstract: An apparatus for manufacturing semiconductors includes a power amplifier to power a laser, a catalyst disposed in the power amplifier, an inlet port, and an exhaust port. The inlet port introduces a mixing gas to an interior of the power amplifier during a cleaning operation so that the mixing gas contacts a surface of the catalyst having a build-up thereon. The mixing gas reacts with and removes the build-up by generating gaseous by-products. The exhaust port removes the gaseous by-products from the power amplifier.

Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.

Abstract: A control system for a plasma treatment apparatus includes a wafer treatment device. The wafer treatment device includes a vapor chamber and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes. The upper electrode assembly includes an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle. The at least one gas nozzle is separated from the gate distribution plate by a gap. The control system includes a measurement device configured to measure a thickness profile of a wafer. The control system includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal.

Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.

Abstract: An extreme ultra violet (EUV) lithography method includes receiving an EUV light by a scanner from an EUV light source, the EUV light passing through an intermediate focus disposed in the scanner and at a junction of the EUV light source and the scanner; directing the EUV light by the scanner to a reticle in the scanner; and deflecting nanoparticles from the EUV light source away from the reticle by generating a gas flow using a gas jet disposed entirely in the scanner and proximate to an interface of the scanner and the intermediate focus such that the gas jet does not block the EUV light.

Abstract: In order to prevent observed long-term energy decay of power amplifiers and correspondingly increase the lifespan of CO2 lasers employing them, a hydrogen-doped mixing gas is supplied from an external pipeline during operation or periodic maintenance in order to effectively remove solid contaminants that build-up over time on a surface of a catalyst disposed within the power amplifier.

Abstract: Supersonic gas jets are provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by the lithography process away from a scanner side and towards a debris collection device. The gas jets can be positioned in a variety of useful orientations, with adjustable gas flow velocity and gas density in order to prevent up to nearly 100% of the tin debris from migrating to the reticle on the scanner side.

Abstract: In order to prevent observed long-term energy decay of power amplifiers and correspondingly increase the lifespan of CO2 lasers employing them, a hydrogen-doped mixing gas is supplied from an external pipeline during operation or periodic maintenance in order to effectively remove solid contaminants that build-up over time on a surface of a catalyst disposed within the power amplifier.

Abstract: Supersonic gas jets are provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by the lithography process away from a scanner side and towards a debris collection device. The gas jets can be positioned in a variety of useful orientations, with adjustable gas flow velocity and gas density in order to prevent up to nearly 100% of the tin debris from migrating to the reticle on the scanner side.

Abstract: In accordance with some embodiments, a lithography method in semiconductor manufacturing is provided. The lithography method includes transmitting a main pulse laser to a zone of excitation through a first optic assembly. The lithography method further includes supplying a coolant to the first optic assembly and detecting a temperature of the coolant with a use of at least one sensor. The lithography method also includes adjusting a heat transfer rate between the coolant and the first optic assembly based on the temperature of the first optic assembly. In addition, the lithography method includes generating a droplet of a target material into the zone of excitation. The lithography method further includes exciting the droplet of the target material into plasma with the main pulse laser in the zone of excitation.

Abstract: A tableware device includes a main body and multiple tableware members. The main body has a lower cover and an upper cover. The upper cover has a first fastener. A receiving space is formed between the upper cover and the lower cover. An end of the lower cover is rotatably connected to an end of the upper cover by a pivoting portion, and free ends thereof jointly form an opening. The lower cover is formed with a first connecting portion and a second fastener corresponding to the first fastener to fasten the upper and lower covers. The tableware members are removably disposed on the main body. Each is provided with a second connecting portion corresponding to the first connecting portion to connect the tableware member with the main body.

Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.

Abstract: A tableware device includes a main body and multiple tableware members. The main body has a lower cover and an upper cover. The upper cover has a first fastener. A receiving space is formed between the upper cover and the lower cover. An end of the lower cover is rotatably connected to an end of the upper cover by a pivoting portion, and free ends thereof jointly form an opening. The lower cover is formed with a first connecting portion and a second fastener corresponding to the first fastener to fasten the upper and lower covers. The tableware members are removably disposed on the main body. Each is provided with a second connecting portion corresponding to the first connecting portion to connect the tableware member with the main body.

Abstract: An exposure tool is configured to remove contaminants and/or prevent contamination of mirrors and/or other optical components included in the exposure tool. In some implementations, the exposure tool is configured to flush and/or otherwise remove contaminants from an illuminator, a projection optics box, and/or one or more other subsystems of the exposure tool using a heated gas such as ozone (O3) or extra clean dry air (XCDA), among other examples. In some implementations, the exposure tool is configured to provide a gas curtain (or gas wall) that includes hydrogen (H2) or another type of gas to reduce the likelihood of contaminants reaching the mirrors included in the exposure tool. In this way, the mirrors and one or more other components of the exposure tool are cleaned and maintained in a clean environment in which radiation absorbing contaminants are controlled to increase the performance of the exposure tool.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.

Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.