Abstract: A thin film transistor includes an active layer located over a substrate, a first gate stack including a stack of a first gate dielectric and a first gate electrode and located on a first surface of the active layer, a pair of first contact electrodes contacting peripheral portions of the first surface of the active layer and laterally spaced from each other along a first horizontal direction by the first gate electrode, a second contact electrode contacting a second surface of the active layer that is vertically spaced from the first surface of the active layer, and a pair of second gate stacks including a respective stack of a second gate dielectric and a second gate electrode and located on a respective peripheral portion of a second surface of the active layer.

Abstract: An embodiment of an integrated circuit chip includes a combination processing core and magnetoresistive random access memory (MRAM) circuitry integrated into the chip. The MRAM circuitry includes a plurality of MRAM cells. The MRAM cells are organized into a number of memories, including a cache memory, a main or working memory and an optional secondary storage memory. The cache memory includes multiple cache levels.

Abstract: Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.

Abstract: The present invention is related to a sensing device, a system and a method for performing a measurement at a first predetermined depth in a monitoring well on a land for use in civil engineering, wherein the sensing device includes: a device main body; an inner sensor configured in the device main body; a first sleeve configured on the device main body and including a cylindrical hollow body having at least one axial through hole and a first and a second annular end surfaces; a first inflatable diaphragm configured on the first sleeve, wherein the monitoring well includes an inner wall, and when the first inflatable diaphragm is in a first inflation status, the first inflatable diaphragm presses against the inner wall at a second predetermined depth so as to define the land into an upper stratum thereabove and a lower stratum thereunder; and an outer sensor penetrating the at least one axial through hole for sensing an analyte flowing through the lower stratum.

Abstract: The invention provides a monitoring device mainly for sensing ground displacement, including the fiber Bragg grating sensored deflectometer and the signal interrogator/computer system. The device uses a segmented design that consists of a flexible tube (referred to as the flexible segment) and two rigid segments and thus referred to as the double hinged FBG segmented deflectometer (DH-FBG-SD). For field installation, multiple DH-FBG-SD units are connected together to form a string as it is inserted into a grouted-in-place inclinometer casing. The distortion of the inclinometer casing induced by ground movement causes relative rotation of the inserted DH-FBG-SD. All of the DH-FBG-SD units are connected to an FBG interrogator/computer system situated on ground surface. The FBG signals are recorded and analyzed by the interrogator/computer system.

Abstract: The invention provides a monitoring device mainly for sensing ground displacement, including the fiber Bragg grating sensored deflectometer and the signal interrogator/computer system. The device uses a segmented design that consists of a flexible tube (referred to as the flexible segment) and two rigid segments and thus referred to as the FBG segmented deflectometer (FBG-SD). For field installation, multiple FBG-SD units are connected together to form a string as it is inserted into a grouted-in-place inclinometer casing. The distortion of the inclinometer casing induced by ground movement causes relative rotation of the inserted FBG-SD. All of the FBG-SD units are connected to an FBG interrogator/computer system situated on ground surface. The FBG signals are recorded and analyzed by the interrogator/computer system.