Abstract: A method for improving an etching rate of wet etching involves an etching reaction chamber used for etching work. The etching reaction chamber is connected with an etchant supply mechanism. The etchant supply mechanism is connected with a purified water supply mechanism. The purified water supply mechanism injects purified water into the etchant supply mechanism according to a change range of pH of the etchant in the etchant supply mechanism to ensure that a hydrogen ion concentration and a fluoride ion concentration of the etchant in the etchant supply mechanism are stable.

Abstract: The present application provides a wafer cleaning equipment and a wafer cleaning method. During wafer cleaning operation, the landing position of a cleaning agent sprayed by a nozzle onto the surface of a wafer can be detected, and when the landing position produces a deviation, the measures of controlling a nozzle adjusting mechanism to adjust the position and/or spray angle of the nozzle, controlling a flow rate adjusting unit to adjust the flow rate of the cleaning agent sprayed by the nozzle, etc. are taken, so that the landing position of the cleaning agent sprayed by the nozzle onto the surface of the wafer is within a preset target region.

Abstract: A method for improving an etching rate of wet etching involves an etching reaction chamber used for etching work. The etching reaction chamber is connected with an etchant supply mechanism. The etchant supply mechanism is connected with a purified water supply mechanism. The purified water supply mechanism injects purified water into the etchant supply mechanism according to a change range of pH of the etchant in the etchant supply mechanism to ensure that a hydrogen ion concentration and a fluoride ion concentration of the etchant in the etchant supply mechanism are stable.

Abstract: A wet etching control system includes a liquid level detector, an etching agent spraying component, a cleaning agent spraying component and controller. The liquid level detector is configured to detect a liquid level of leakage liquid in a leakage liquid collection tank, and the controller is configured to control the etching agent spraying component to stop a spraying of an etching agent onto a surface of a wafer, and control the cleaning agent spraying component to spray a cleaning agent onto the surface of the wafer when the liquid level of the leakage liquid is greater than a first preset value.