Abstract: An optical lens structure includes an optical substrate, a predetermined processing area, an optical micro thin film and a micro thin film pattern. The optical substrate has a first surface and a second surface and rays of light passes through the optical substrate. The predetermined processing area is provided on the first surface or the second surface of the optical substrate. The micro thin optical film is formed on the predetermined processing area of the first surface or the second surface by non-contact processing with an ink liquid spot material via nozzles. The micro thin film pattern is formed from the micro thin optical film to thereby provide an optical characteristic.

Abstract: An ultraviolet light-emitting diode includes a transparent substrate and an ultraviolet illuminant epitaxial structure. The ultraviolet illuminant epitaxial structure includes an N-type semiconductor layer which is disposed on the transparent substrate and comprised of a first portion and a second portion. The first portion of the N-type semiconductor layer includes a light-emitting layer disposed thereon, a P-type semiconductor layer on the light emitting layer, and a P-type contact layer disposed on the P-type semiconductor layer. The second portion of the N-type semiconductor layer includes an N-type semiconductor film disposed thereon and separated from the light-emitting layer. A band gap of the N-type semiconductor film is smaller than a band gap of the light-emitting layer. The N-type contact is disposed on the N-type semiconductor film. The P-type contact is disposed on the P-type contact layer.

Abstract: A solar cell includes a photovoltaic substrate, a front electrode, and a back electrode. The back electrode is disposed on a back surface of the photovoltaic substrate and includes a collector layer and a bus electrode. The collector layer has at least one collector opening having a main opening portion and an expansive opening portion. The expansive opening portion has an outer expansive edge which is at least partially arcuate. The expansive opening portion has a width larger than a width of the main opening portion. The bus electrode includes at least one bus electrode segment corresponding in position to the collector opening. The at least one bus electrode segment is exposed from the at least one collector opening, and has an end portion exposed from the expansive opening portion.

Abstract: A method for reducing line edge roughness of patterned photoresist, include at least: provide a patterned photoresist which has at least a trench and is located on a substrate; fill trenches so let that trenches are totally filled by an additional material, wherein the additional material is easily to bond with the patterned photoresist; remove part of the additional material which is located on patterned photoresist and the substrate; and treat the additional material so let that adhesion between the additional material and patterned photoresist is enhanced after the additional material is treated. Moreover, while only trenches are filled by the additional material, step of removing part of the additional material could be omitted; while adhesion between the additional material and patterned photoresist is good, step of treating the additional material could be omitted.

Abstract: A method for reducing line edge roughness of photoresist, at least include: provide a photoresist which at least has a trench and is located on substrate; fill trenches so let that trenches are totally filled by an additional material; remove part of additional material which is located on photoresist and substrate; and treat additional material so let that adhesion between additional material and photoresist is enhanced after additional material is treated. Moreover, while only trenches are filled by additional material, step of removing part of additional material could be omitted; while adhesion between additional material and photoresist is good, step of treating additional material could be omitted.