Abstract: The problem of providing transistors that can be manufactured to any specified threshold voltage withing a broad range of threshold voltages without creating leakage, capacitance, or process compatibility issues is solved by introducing a buried layer of a second dielectric composition into a gate dielectric of a first dielectric composition. The second dielectric composition is selected relative to the first dielectric composition so that dipoles form around the interface of the two dielectrics. The dipoles create an electric field that causes a shift in the threshold voltage. The buried layer has a higher dielectric constant than the gate dielectric, is thinner than the gate dielectric, and is proximate the channel.

Abstract: A semiconductor structure includes a substrate and a semiconductor channel layer over the substrate. The semiconductor structure includes a high-k gate dielectric layer over the semiconductor channel layer, a work function metal layer over the high-k gate dielectric layer, and a bulk metal layer over the work function metal layer. The work function metal layer includes a first portion and a second portion over the first portion. Both the first portion and the second portion are conductive. Materials included in the second portion are also included in the first portion. The first portion is doped with silicon at a first dopant concentration, and the second portion is not doped with silicon or is doped with silicon at a second dopant concentration lower than the first dopant concentration.

Abstract: A driving electrode structure of a plasma display panel for improving operation margin is described. A plurality openings is formed in a transparent electrode according to the driving characteristics of fluorescent layer of each luminous cell to adjust the effective area of the transparent electrode in each luminous cell, thereby increasing the operation margin of the sustaining voltage.

Abstract: A method for forming a patterned ITO structure by using a photosensitive ITO solution is provided. By mixing both the ITO and photosensitive material to form a photosensitive ITO solution on a substrate, a patterned ITO structure is available by directly exposing and developing the photosensitive ITO layer. Significantly, no photo-resist layer is required.

Abstract: An electrode structure with white balance adjustment for plasma display panel is described. The electrode structure has a comb electrode, a first transparent electrode and a second transparent electrode. The first transparent electrode and the second transparent electrode are separated from the comb electrode, respectively. Changing the profile of the first transparent electrode and the second transparent electrode increases the flexibility of the transparent electrodes. Further, the width of the first electrodes responsive to the luminous regions is adjusted to control the luminance through the first transparent electrode so that white balance of the plasma display panel is precisely corrected.

Abstract: A driving electrode structure of a plasma display panel for improving operation margin is described. A plurality openings is formed in a transparent electrode according to the driving characteristics of fluorescent layer of each luminous cell to adjust the effective area of the transparent electrode in each luminous cell, thereby increasing the operation margin of the sustaining voltage.