Patents by Inventor Yen-Wei Huang

Yen-Wei Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11957722
    Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: April 16, 2024
    Assignee: GLAC BIOTECH CO., LTD
    Inventors: Hsieh-Hsun Ho, Yi-Wei Kuo, Wen-Yang Lin, Jia-Hung Lin, Yen-Yu Huang, Chi-Huei Lin, Shin-Yu Tsai
  • Patent number: 11937515
    Abstract: Semiconductor device and methods of forming the same are provided. A semiconductor device according to one embodiment includes a dielectric layer including a top surface, a plurality of magneto-resistive memory cells disposed in the dielectric layer and including top electrodes, a first etch stop layer disposed over the dielectric layer, a common electrode extending through the first etch stop layer to be in direct contact with the top electrodes, and a second etch stop layer disposed on the first etch stop layer and the common electrode. Top surfaces of the top electrodes are coplanar with the top surface of the dielectric layer.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Fan Huang, Hsiang-Ku Shen, Liang-Wei Wang, Chen-Chiu Huang, Dian-Hau Chen, Yen-Ming Chen
  • Patent number: 11935804
    Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.
    Type: Grant
    Filed: April 10, 2023
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Sung Huang, Ming Hung Tseng, Yen-Liang Lin, Hao-Yi Tsai, Chi-Ming Tsai, Chung-Shi Liu, Chih-Wei Lin, Ming-Che Ho
  • Patent number: 11911421
    Abstract: Disclosed herein is a probiotic composition that includes Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9, which are deposited at the China Center for Type Culture Collection (CCTCC) respectively under accession numbers CCTCC M 2011127, CCTCC M 2011128, and CCTCC M 2014588. A number ratio of Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9 ranges from 1:0.1:0.1 to 1:1:8. Also disclosed herein is use of the probiotic composition for alleviating type 1 diabetes mellitus (T1DM).
    Type: Grant
    Filed: November 18, 2021
    Date of Patent: February 27, 2024
    Assignee: GLAC BIOTECH CO., LTD.
    Inventors: Hsieh-Hsun Ho, Wen-Yang Lin, Yi-Wei Kuo, Yen-Yu Huang, Jia-Hung Lin
  • Patent number: 11906898
    Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: February 20, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Chieh Tien, Cheng-Hsuen Chiang, Chih-Ming Chen, Cheng-Ming Lin, Yen-Wei Huang, Hao-Ming Chang, Kuo-Chin Lin, Kuan-Shien Lee
  • Publication number: 20200371425
    Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.
    Type: Application
    Filed: August 10, 2020
    Publication date: November 26, 2020
    Inventors: Chun-Chieh TIEN, Cheng-Hsuen CHIANG, Chih-Ming CHEN, Cheng-Ming LIN, Yen-Wei HUANG, Hao-Ming CHANG, Kuo-Chin LIN, Kuan-Shien LEE
  • Patent number: 10739671
    Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: August 11, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chieh Tien, Cheng-Hsuen Chiang, Chih-Ming Chen, Cheng-Ming Lin, Yen-Wei Huang, Hao-Ming Chang, Kuo Chin Lin, Kuan-Shien Lee
  • Publication number: 20190146326
    Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.
    Type: Application
    Filed: February 26, 2018
    Publication date: May 16, 2019
    Inventors: Chun-Chieh TIEN, Cheng-Hsuen CHIANG, Chih-Ming CHEN, Cheng-Ming LIN, Yen-Wei HUANG, Hao-Ming CHANG, Kuo Chin LIN, Kuan-Shien LEE
  • Patent number: 8772689
    Abstract: A method is provided to track the sun. An omnidirectional sensor is used for acquiring sun's position. The sensor can track sun's position in an omnidirectional way. A controller is also provided to control the tracking. When the sun shines strongly, the sensor is controlled to track the sun's position. When the sun does not shine strongly, the tracking is stopped. Thus, the cost for tracking the sun's position is reduced and accuracy of the tracking is enhanced.
    Type: Grant
    Filed: April 24, 2012
    Date of Patent: July 8, 2014
    Assignee: Institute of Nuclear Energy Research, Atomic Energy Council
    Inventors: Hong-Yih Yeh, Yen-Wei Huang, Cheng-Dar Lee
  • Patent number: 8669508
    Abstract: A sun-locating apparatus includes a substrate, a mounting unit, a photo-detecting unit, an optical element and a cover. The mounting unit is provided on the substrate and formed with an upper aperture and a lower aperture in communication with the upper aperture. The photo-detecting unit is located in the lower aperture. The photo-detecting unit includes at least four photodiodes. The optical element is provided on the mounting unit for covering the upper aperture. The cover is provided on the substrate for covering the mounting unit, the photo-detecting unit and the optical element.
    Type: Grant
    Filed: September 6, 2011
    Date of Patent: March 11, 2014
    Assignee: Institute of Nuclear Energy Research, Atomic Energy Council
    Inventors: Yen-Wei Huang, Hong-Yih Yeh, Cheng-Dar Lee
  • Publication number: 20120305747
    Abstract: A method is provided to track the sun. An omnidirectional sensor is used for acquiring sun's position. The sensor can track sun's position in an omnidirectional way. A controller is also provided to control the tracking. When the sun shines strongly, the sensor is controlled to track the sun's position. When the sun does not shine strongly, the tracking is stopped. Thus, the cost for tracking the sun's position is reduced and accuracy of the tracking is enhanced.
    Type: Application
    Filed: April 24, 2012
    Publication date: December 6, 2012
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENGERGY RESEARCH
    Inventors: Hong-Yih Yeh, Yen-Wei Huang, Cheng-Dar Lee
  • Publication number: 20120097836
    Abstract: A sun-locating apparatus includes a substrate, a mounting unit, a photo-detecting unit, an optical element and a cover. The mounting unit is provided on the substrate and formed with an upper aperture and a lower aperture in communication with the upper aperture. The photo-detecting unit is located in the lower aperture. The photo-detecting unit includes at least four photodiodes. The optical element is provided on the mounting unit for covering the upper aperture. The cover is provided on the substrate for covering the mounting unit, the photo-detecting unit and the optical element.
    Type: Application
    Filed: September 6, 2011
    Publication date: April 26, 2012
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Yen-Wei Huang, Hong-Yih Yeh, Cheng-Dar Lee