Abstract: The present invention provides a method for preventing and/or treating a NSAID-induced gastric ulcer. The method comprises administrating an effective amount of a lactic acid bacterium set to a subject. The lactic acid bacterium set comprises Lactobacillus plantarum GKD7 and Pediococcus acidilactici GKA4.

Abstract: A semiconductor structure includes a substrate and a semiconductor channel layer over the substrate. The semiconductor structure includes a high-k gate dielectric layer over the semiconductor channel layer, a work function metal layer over the high-k gate dielectric layer, and a bulk metal layer over the work function metal layer. The work function metal layer includes a first portion and a second portion over the first portion. Both the first portion and the second portion are conductive. Materials included in the second portion are also included in the first portion. The first portion is doped with silicon at a first dopant concentration, and the second portion is not doped with silicon or is doped with silicon at a second dopant concentration lower than the first dopant concentration.

Abstract: The present disclosure relates to a complex probiotic composition and a method for improving exercise performance of a subject with low intrinsic aerobic exercise capacity. The complex probiotic composition, which includes Lactobacillus rhamnosus GKLC1, Bifidobacterium lactis GKK24 and Clostridium butyricum GKB7, administered to the subject with the low intrinsic aerobic exercise capacity in a continuation period, can effectively reduce serum lactic acid and serum urea nitrogen after aerobic exercise, reduce proportion of offal fat and/or increase liver and muscle glycogen contents, thereby being as an effective ingredient for preparation of various compositions.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: An ear canal clamp for small animals includes a base and a clamping mechanism. The clamping mechanism includes two clamping arms movably mounted on the base, a biasing member mounted on the base and constrained between the clamping arms, and two ear canal positioning members mounted respectively to the clamping arms and facing each other. The clamping arms are configured to move toward each other and compress the biasing member to increase the distance between the ear canal positioning members. A biasing force generated by the biasing member when compressed is used to push the clamping arms to move oppositely with respect to each other.

Abstract: A group III-N based semiconductor 3D integrated circuit that directly stacks a thin-film transistor on a group III-N based transistor is provided. Since the group III-N based semiconductor 3D integrated circuit integrates the group III-N based transistor and the thin-film transistor without performing a packaging process, the group III-N based semiconductor 3D integrated circuit can reduce the packaging cost and have better circuit performance and reliability.

Abstract: A switch chip includes a first switch device, a first ESD protection device and a second ESD protection device. The first switch device is electrically coupled between a first pad and a second pad. The first ESD protection device is electrically coupled to a third pad which is electrically coupled to the first pad by a first bond wire. The second ESD protection device is electrically coupled to a fourth pad which is electrically coupled to the second pad by a second bond wire.

Abstract: A switch chip includes a first switch device, a first ESD protection device and a second ESD protection device. The first switch device is electrically coupled between a first pad and a second pad. The first ESD protection device is electrically coupled to a third pad which is electrically coupled to the first pad by a first bond wire. The second ESD protection device is electrically coupled to a fourth pad which is electrically coupled to the second pad by a second bond wire.