Abstract: A display method includes the following operations. Multiple first image data are received by a processor through a graphics card. Multiple first image data are analyzed based on an artificial intelligence model by the processor. Multiple second image data are transmitted to the display by the processor. Multiple second image data include multiple first image data, at least one compensation image data between adjacent two of multiple first image data, or combinations thereof.

Abstract: A display method includes the following operations. Multiple first image data are received by a processor through a graphics card. Multiple first image data are analyzed based on an artificial intelligence model by the processor. Multiple second image data are transmitted to the display by the processor. Multiple second image data include multiple first image data, at least one compensation image data between adjacent two of multiple first image data, or combinations thereof.

Abstract: A method of fabricating a liquid crystal display panel is provided, which comprises the steps of providing a substrate; forming a mask layer over the substrate, wherein the mask layer has a reverse-tapered opening exposing a predetermined conductive line area; depositing a metal layer on the substrate within the predetermined conductive line area to form a conductive line with a tapered sidewall by performing an anisotropic deposition process; and removing the mask.

Abstract: A manufacture method for a liquid crystal display device and the marks of a substrate thereof is submitted in this present invention. First, a substrate is provided for marked the marks. Then at least one high power light beam is used to focus on and melt the internal part of the substrate for forming the opaque areas. According to the arrangement of the opaque areas, which can be used as the alignment marks or the identification marks. Due to the position of the opaque areas formed by the high power light beam are accurate, the degree of accuracy in the follow-up assembly operation is improved.

Abstract: A method of producing a thin film transistor is described. The doped amorphous silicon is formed by ion implantation. The photoresist used by the ion implantation is formed by backside exposure or by half-tone photo mask, and a photo mask can therefore be eliminated.