Abstract: A composition for modulating intestinal permeability and/or treating and/or preventing leaky gut related diseases including a Chinese herbal compound material or a Chinese herbal compound extract is provided. The Chinese herbal compound material includes Ganoderma, red jujube, longan and lotus seed. Moreover, the Chinese herbal compound extract includes a Ganoderma extract, a red jujube extract, a longan extract and a lotus seed extract.

Abstract: A composition for modulating intestinal permeability and/or treating and/or preventing leaky gut related diseases including a Chinese herbal compound material or a Chinese herbal compound extract is provided. The Chinese herbal compound material includes Ganoderma, red jujube, longan and lotus seed. Moreover, the Chinese herbal compound extract includes a Ganoderma extract, a red jujube extract, a longan extract and a lotus seed extract.

Abstract: An answer searching system and method is disclosed herein. The answer searching system includes a user, a database, a few of experts and a service platform. The user sends at least one question by a communication device. The database stores a number of experts' data. The experts are corresponding to the experts' data stored in the database. The service platform is used to receive the questions sent from the user and search a suitable expert's data in accordance with the question in the database. Therefore, the service platform contacts the expert to answer the question and send the expert's answer back to the user. The user gives a feedback to the expert and save the feedback in the expert's data of the database.

Abstract: A method for cleaning semiconductor device is disclosed. The steps include providing a mask-protective device, providing a mask with a defined pattern, and combining the mask-protective device with the cleaned mask layer, such that the space between the mask-protective device and the mask layer can fill with the cleaning gas after combining process. Thus, the mask layer would not be polluted by the particle is generated from the environment, such that the resolution of the image and the reliability can be increased.

Abstract: A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides sufficient energy for the extra electrons caused by the ashing process to escape from the substrate, and the remaining photoresist and polymer are stripped with stripping solvents after the surface treatment.

Abstract: A method for cleaning semiconductor device is disclosed. The steps include providing a mask-protective device, providing a mask with a defined pattern, and combining the mask-protective device with the cleaned mask layer, such that the space between the mask-protective device and the mask layer can fill with the cleaning gas after combining process. Thus, the mask layer would not be polluted by the particle is generated from the environment, such that the resolution of the image and the reliability can be increased.

Abstract: A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides sufficient energy for the extra electrons caused by the ashing process to escape from the substrate, and the remaining photoresist and polymer are stripped with stripping solvents after the surface treatment.

Abstract: A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is irradiated with UV light, and the remaining photoresist and polymer are stripped with stripping solvents after UV irradiation.

Abstract: A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is irradiated with UV light, and the remaining photoresist and polymer are stripped with stripping solvents after UV irradiation.

Abstract: A method for preventing metal extrusion in a semiconductor structure is disclosed in this present invention. The point of this invention is that the first metal is suffered to a thermal process before the fabrication of a conformal glue layer into a via onto the first metal layer, and thus the first metal layer will not be extruded by thermal effect any more during the following processes. Therefore, this invention can provide a more efficient method for preventing metal extrusion in a semiconductor structure, and the phenomenon of the raising resistance caused by the metal extrusion can be avoided thereby.

Abstract: An improved post-metal-plasma-etching wafer cleaning process includes providing a wafer having a naked metal structure thereon, dipping the wafer into a first cleaning vessel having a volume of basic solution therein, and after dipping the wafer in the first cleaning vessel, the wafer is then transferred into a second cleaning vessel to perform at least one cycle of a hot QDR cleaning process.

Abstract: A method of reducing the chamber particle level. Firstly, clean a chamber and form a passivation layer on an inner surface of the chamber. Then, perform some fabrication process inside the chamber, wherein the interaction between the fabrication processes and the chamber is negligible. In short, the key-point is forming a passivation layer, which essentially does not interact with the fabrication processes, on the inner surface before the fabrication processes are performed. The passivation layer could decrease any defect, such as particle level and peeling, induced by the previous interaction. For example, before a chlorine plasma is used to etch, a passivation layer, which essentially does not interact with the chlorine plasma, could be formed on the inner surface of the etch chamber by the usage of a fluorine-chlorine plasma.