Abstract: In some aspects, the techniques described herein relate to a quantum method for solving a second-order cone program (SOCP) instance, the method including: defining a Newton system for the SOCP instance by constructing matrix G and vector h based on the SOCP instance; preconditioning matrix G and vector h via row normalization to reduce a condition number of matrix G; iteratively determining u until a predetermined iteration condition is met, the iterations including: causing a quantum computing system to apply matrix G and vector h to a quantum linear system solver (QLSS) to generate a quantum state; causing the quantum computing system to perform quantum state tomography on the quantum state; and updating a value of u based on a current value of u and the output of the quantum state tomography; and determining a solution to the SOCP instance based on the updated value of u.

Abstract: A memory device includes a plurality of memory cells disposed over a substrate and formed as an array that has a plurality of rows and a plurality of columns. Each of the plurality of memory cells includes a plurality of transistors. A first subset of the plurality of memory cells, that are disposed in first neighboring ones of the plurality of rows, are physically coupled to a corresponding one of a plurality of second interconnect structures that carries a supply voltage through a corresponding one of a plurality of first interconnect structures. The plurality of first interconnect structures extend along a first lateral direction in parallel with a lengthwise direction of a channel of each of the transistors of the memory cells, and the plurality of second interconnect structures, disposed above the plurality of first interconnect structures, extend along a second lateral direction perpendicular to the first lateral direction.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes an interconnect structure overlying a semiconductor substrate and comprising a conductive wire. A passivation structure overlies the interconnect structure. An upper conductive structure overlies the passivation structure and comprises a first conductive layer, a dielectric layer, and a second conductive layer. The first conductive layer is disposed between the dielectric layer and the passivation structure. The second conductive layer extends along a top surface of the dielectric layer and penetrates through the first conductive layer and the passivation structure to the conductive wire.

Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.

Abstract: A write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.

Abstract: An electronic device includes a device body and an antenna module disposed in the device body and including a conductive structure and a coaxial cable including a core wire, a shielding layer wrapping the core wire, and an outer jacket wrapping the shielding layer. The conductive structure includes a structure body and a slot formed on the structure body and penetrating the structure body in a thickness direction of the structure body. A section of the shielding layer extends from the outer jacket and is connected to the structure body. A physical portion of the structure body and the section of the shielding layer are respectively located on two opposite sides of the slot in a width direction of the slot. A section of the core wire extends from the section of the shielding layer and overlaps the slot and the physical portion in the thickness direction.

Abstract: Disclosed herein are related to a memory device. In one aspect, a memory device includes a set of memory cells. In one aspect, the memory device includes a first bit line extending along a direction. The first bit line may be coupled to a subset of the set of memory cells disposed along the direction. In one aspect, the memory device includes a second bit line extending along the direction. In one aspect, the memory device includes a switch coupled between the first bit line and the second bit line.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

Abstract: A memory device and a method for operating the memory device are provided. The memory device includes a memory cell and a bit line connected to the memory cell. A negative voltage generator is connected to the bit line. The negative voltage generator, when enabled, is operative to provide a first write path for the bit line. A control circuit is connected to the negative voltage generator and the bit line. The control circuit is operative to provide a second write path for the bit line when the negative voltage generator is not enabled.

Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.

Abstract: Disclosed herein is a probiotic composition that includes Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9, which are deposited at the China Center for Type Culture Collection (CCTCC) respectively under accession numbers CCTCC M 2011127, CCTCC M 2011128, and CCTCC M 2014588. A number ratio of Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9 ranges from 1:0.1:0.1 to 1:1:8. Also disclosed herein is use of the probiotic composition for alleviating type 1 diabetes mellitus (T1DM).

Abstract: A powder heating assembly of a rapid prototyping apparatus includes a powder feeder and a heating module. The powder feeder includes an accommodation space and a powder falling port in communication with the accommodation space. The heating module is disposed under the powder feeder, and includes a thermally conductive cap and a heat conduction structure. The powder falling port is capped by the thermally conductive cap. The thermally conductive cap includes a powder exhaust port. The powder exhaust port is in communication with the powder falling port. The heat conduction structure is arranged between the accommodation space of the powder feeder and the thermally conductive cap and includes a heater. The heat generated by the heater is transferred to the construction powder within the powder feeder to preheat the construction powder, remove the moisture contained in the construction powder and dry the construction powder.

Abstract: A powder heating assembly of a rapid prototyping apparatus includes a powder feeder and a heating module. The powder feeder includes an accommodation space and a powder falling port in communication with the accommodation space. The heating module is disposed under the powder feeder, and includes a thermally conductive cap and a heat conduction structure. The powder falling port is capped by the thermally conductive cap. The thermally conductive cap includes a powder exhaust port. The powder exhaust port is in communication with the powder falling port. The heat conduction structure is arranged between the accommodation space of the powder feeder and the thermally conductive cap and includes a heater. The heat generated by the heater is transferred to the construction powder within the powder feeder to preheat the construction powder, remove the moisture contained in the construction powder and dry the construction powder.

Abstract: In a method for continuing a function induced by a multi-touch gesture on a touchpad, the object number of the multi-touch gesture is monitored during the function is performed, if the object number is detected changed so that one or more objects are still on the touchpad, the objects left on the touchpad will be detected to identify whether one or more of them move clockwise or anticlockwise, and if a clockwise or anticlockwise movement is detected, the function will be continued.

Abstract: A touchpad is defined with two or more detect regions thereon, and each of the defined detect regions has a respective remiss threshold for identifying remiss touch. When any of the defined detect regions is touched, the touchpad compares the touch area of the detected touch with the remiss threshold of the touched detect region to identify whether the detected touch is a remiss touch or not. Preferably, the location, range and threshold setting of the detect region is user defined, so that a user may adjust the remiss setting for optimized prevention against remiss touch.

Abstract: A virtual first in first out (FIFO) direct memory access (DMA) device applied in an electronic device having a processor, a UART unit and a virtual FIFO unit is provided. In the virtual FIFO DMA device, a DMA unit is for transferring data between the UART unit and the virtual FIFO unit. A virtual FIFO controller, which has a read pointer and a write pointer, is electrically connected with the DMA unit. When the DMA unit reads data from or writes data into the virtual FIFO unit, the virtual FIFO controller correspondingly changes the value of the read pointer or the write pointer. A virtual port is electrically connected to the DMA unit and the processor. A processor reads data from or writes data into the virtual FIFO unit via the virtual port and the DMA unit.

Abstract: A processing module with multilevel cache architecture, including: a processor; a level-one (L1) cache, coupled to the processor, for caching data for the processor, wherein the L1 cache has at least one L1 cacheable range; a level-two (L2) cache, coupled to the L1 cache, for caching data for the processor, wherein the L2 cache has at least one L2 cacheable range, and the L1 cacheable range and the L2 cacheable range are mutually exclusive; and a memory interface, coupled to the L1 cache and the L2 cache, for transferring data between the L1 cache and a memory and for transferring data between the L2 cache and the memory.

Abstract: A graphics processing system is provided. The graphics processing system comprises a display unit, a frame buffer, an interface, and a controller. The frame buffer, defined by an initial pointer and a boundary pointer first image data in the frame buffer, stores first image data corresponding to a first image area displayed on the display unit. The interface receives a scrolling request directing the first image to scroll in a vertical and/or horizontal direction. The controller determines a reading pointer of the frame buffer according to the initial and boundary pointers and the scrolling request, loads new image data into a memory location at which a particular part of the first image data is stored.

Abstract: A memory system is provided. A processor provides a data access address. A memory device includes a predetermined number of ways. The processor selectively configures a selected number less than or equal to the predetermined number of the ways as cache memory belonging to a cacheable region, and configures remaining ways as directly addressable memory belonging to a directly addressable region by memory configuration information. A memory controller determines the data access address corresponding to the cacheable region or the directly addressable region, selects only the way in the directly addressable region corresponding to the data access address when the data access address corresponds to the directly addressable region, and selects only the way(s) belonging to the cacheable region when the data access address corresponds to the cacheable region. A configuration controller monitors the status of the ways and adjusting the memory configuration information according to the status of the ways.