Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: Embodiments maintain a data pool that includes heterogeneous data sets, and receiving a first data batch of a data set from a data source into the data pool. Embodiments determine a current state of the data set based on a data set state diagram including a plurality of data set states, and identify a condition of the first data batch. Embodiments further set a data batch state for the first data batch, based on a data batch state diagram, and update the data batch state of a prior data batch received before the first data batch, based on the condition of the first data batch. Embodiments additionally transition the data set state diagram, based on the condition of the first data batch, to an updated data set state. Embodiments maintain a data state repository storing the data set state for each of the plurality of heterogeneous data sets.

Abstract: Manufacturing of a shoe or a portion of a shoe is enhanced by executing various shoe-manufacturing processes in an automated fashion. For example, information describing a shoe part may be determined, such as an identification, an orientation, a color, a surface topography, an alignment, a size, etc. Based on the information describing the shoe part, automated shoe-manufacturing apparatuses may be instructed to apply various shoe-manufacturing processes to the shoe part, such as a pickup and placement of the shoe part with a pickup tool.

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.

Abstract: The present invention relates to a novel antibody, an antigen-binding fragment thereof and the uses of the antibody and fragment, wherein the antibody and the fragment comprise specific complementarity-determining regions (CDRs) and/or specifically bind to human CD73 at specific epitopes.

Abstract: The present invention relates to an antibody or antigen-binding fragment thereof that bind human vascular endothelial growth factor receptor 2 (VEGFR-2). The present invention also relates to a method for inhibiting VEGFR-2-mediated signaling in a subject in need, a method for treating diseases and/or disorders caused by or related to VEGFR-2 activity and/or signaling in a subject afflicted with the diseases and disorders, a method for treating tumor in a subject afflicted with the tumor, a method for inhibiting cell proliferation of endothelial cells in a subject in need, and a method for detecting human vascular endothelial growth factor receptor in a sample.

Abstract: The present invention relates to an antibody or antigen-binding fragment thereof that bind human vascular endothelial growth factor receptor 2 (VEGFR-2). The present invention also relates to a method for inhibiting VEGFR-2-mediated signaling in a subject in need, a method for treating diseases and/or disorders caused by or related to VEGFR-2 activity and/or signaling in a subject afflicted with the diseases and disorders, a method for treating tumor in a subject afflicted with the tumor, a method for inhibiting cell proliferation of endothelial cells in a subject in need, and a method for detecting human vascular endothelial growth factor receptor in a sample.

Abstract: The present invention relates to an antibody or antigen-binding fragment thereof that bind human vascular endothelial growth factor receptor 2 (VEGFR-2). The present invention also relates to a method for inhibiting VEGFR-2-mediated signaling in a subject in need, a method for treating diseases and/or disorders caused by or related to VEGFR-2 activity and/or signaling in a subject afflicted with the diseases and disorders, a method for treating tumor in a subject afflicted with the tumor, a method for inhibiting cell proliferation of endothelial cells in a subject in need, and a method for detecting human vascular endothelial growth factor receptor in a sample.

Abstract: An anti-VEGF antibody, or a binding fragment thereof, includes a heavy-chain variable region that comprises: (1) a CDRH1 sequence selected from SEQ ID NO: 17, 20, 23, 26, 29, 32, 35, or 38), (2) a CDRH2 sequence selected from SEQ ID NO:18, 21, 24, 27, 30, 33, 36, or 39, and (3) a CDRH3 sequence selected from SEQ ID NO:19, 22, 25, 28, 31, 34, 37, or 40; and a light-chain variable region that comprises: (1) a CDRL1 sequence selected from SEQ ID NO: 41, 44, 47, 50, 53, 56, 59, or 62, (2) a CDRL2 sequence selected from SEQ ID NO: 42, 45, 48, 51, 54, 57, 60, or 63, and (3) a CDRL3 sequence selected from SEQ ID NO: 43, 46, 49, 52, 55, 58, 61, or 64. A method for treating or preventing a VEGF-related disorder, e.g., diabetic retinopathy, age-related macular degeneration, or cancer, uses the antibodies.

Abstract: A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.

Abstract: A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.