Abstract: A device includes a first power rail for a first power domain and a second power rail for a second power domain. A first circuit block is connected to the first power rail and a second circuit block is connected to the second power rail. The first and second circuit blocks are both connected to a virtual VSS terminal. A footer circuit is connected between the virtual VSS terminal and a ground terminal, and the footer circuit is configured to selectively control a connection between the virtual VSS terminal and the ground terminal.

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate, the fin having a first width and a first height after the forming; forming a dummy gate stack over a channel region of the fin; growing an epitaxial source/drain in the fin adjacent the channel region; and after growing the epitaxial source/drain, replacing the dummy gate stack with a metal gate stack, the channel region of the fin having the first width and the first height before the replacing, the channel region of the fin having a second width and a second height after the replacing, the second width being less than the first width, the second height being less than the first height.

Abstract: A semiconductor device includes a substrate having a first device and a second device, where at least one of the first device and the second device includes a photo-sensitive element. The semiconductor device includes a first isolation feature surrounding the first device, where the first isolation feature has a first depth. The semiconductor device includes a second isolation feature surrounding the second device, where the second isolation feature has a second depth and where the first depth is greater than the second depth.

Abstract: Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.

Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.

Abstract: A method for forming a semiconductor device includes providing a semiconductor substrate, implanting n-type impurities into a device region in the semiconductor substrate to form an implanted region and an un-implanted region. The method also includes forming an epitaxial layer on the semiconductor substrate and forming a trench surrounding the device region in direct contact with the implanted region. The method further includes performing a selective lateral etch through the trench to remove the implanted region to form a cavity under the epitaxial layer. The un-implanted region is retained to form a pillar under the epitaxial layer. Next, an insulating material is disposed in the cavity and the trench. The method forms a single crystalline region that is separated from the semiconductor substrate by the insulating material except at the pillar.

Abstract: A semiconductor device according to the present disclosure includes a gate-all-around (GAA) transistor in a first device area and a fin-type field effect transistor (FinFET) in a second device area. The GAA transistor includes a plurality of vertically stacked channel members and a first gate structure over and around the plurality of vertically stacked channel members. The FinFET includes a fin-shaped channel member and a second gate structure over the fin-shaped channel member. The fin-shaped channel member includes semiconductor layers interleaved by sacrificial layers.

Abstract: A mechanical arm calibration system and a mechanical arm calibration method are provided. The method includes: locating a position of an end point of a mechanical arm in a three-dimensional space to calculate an actual motion trajectory of the end point when the mechanical arm is operating; retrieving link parameters of the mechanical arm, randomly generating sets of particles including compensation amounts for the link parameters through particle swarm optimization (PSO), importing the compensation amounts of each of the sets of particles into forward kinematics after addition of the corresponding link parameters, to calculate an adaptive motion trajectory of the end point; calculating position errors between the adaptive motion trajectory and the actual motion trajectory of each of the sets of particles for a fitness value of the PSO to estimate a group best position; and updating the link parameters by the compensation amounts corresponding to the group best position.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a carrier, a base, and a first driving assembly. The carrier holds an optical element with an optical axis. The carrier is movably connected to the base. The first driving assembly drives the carrier to move relative to the base. The first driving assembly includes a driving coil disposed on the carrier, and the direction of the winding axis of the driving coil is different from the direction of the optical axis. The carrier has an abutting surface, which faces and is in direct contact with the driving coil. The maximum size of the abutting surface is greater than the maximum size of the driving coil in the direction of the optical axis.

Abstract: An optical element driving mechanism is provided, including a base, a holder movably coupled to the base for holding an optical element, a casing, a frame, a driving assembly, and an adhering member. The casing has a top wall and a plurality of side walls extending from the edge of the top wall along an optical axis of the optical element, and the top wall is closer to a light-incident end than the base. The frame is disposed on the top wall and has a frame protrusion extending toward the base. The driving assembly is configured to drive the holder to move relative to the base, and an accommodating space is formed between the base, the frame and the casing. The adhering member is disposed in the accommodating space and configured to directly adhere to the base, the frame, the casing, and the driving assembly.

Abstract: The present invention provides a flow control switch including a pipeline structure, a rotating structure, a position-limiting structure and a knob structure. The pipeline structure includes a tubular body and a ball body rotatably disposed in the tubular body. The rotating structure includes a rotatable element connected to the ball body for driving the ball body to rotate. The position-limiting structure is disposed on the tubular body. The knob structure is liftably disposed on the rotating structure for cooperating with the rotatable element. The position-limiting structure has a first and a second position-limiting groove. The knob structure includes a knob body liftably disposed on the rotatable element and a position-limiting element detachably disposed on the knob body. The position-limiting element is optionally disposed in one of the first and the second position-limiting groove, so as to limit a rotation of the rotatable element relative to the position-limiting structure.

Abstract: A driving mechanism is provided, including a movable portion, a fixed portion and a driving assembly. The movable portion is movable relative to the fixed portion. The driving assembly drives the movable portion to move relative to the fixed portion. The driving assembly includes a biasing element generating a driving force, and a first electrical connection portion electrically connected to the biasing element. The biasing element is clamped at a first position of the first electrical connection portion by a first clamping force, and the biasing element is clamped at a second position of the first electrical connection portion by a second clamping force The first clamping force is different from the second clamping force.

Abstract: A multi-mode scanning device for scanning an original includes a background element, a first light source, a second light source and an optical module. The first light source outputs visible light to irradiate the background element and the original to generate first light and second light, respectively. The second light source outputs invisible light to irradiate a combination of the background element and the original to generate third light and fourth light, wherein the background element reflects the invisible light. The optical module receives the first to fourth light and generates sensing signals representative of visible light information and invisible light information of the original. The original is disposed between the background element and the optical module. The first light source, the second light source and the optical module are disposed on a same side of the background element.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: A pick-and-place system includes a movement mechanism, an adjustment mechanism, and a clamping mechanism. The adjustment mechanism includes a first coupling component, a second coupling component, and a driving assembly. The first coupling component is mounted on the movement mechanism. The second coupling component is movably disposed on the first coupling component. The driving assembly is configured to be connected to the first coupling component and the second coupling component so as to force the first coupling component and the second coupling component to move relative to each other. The clamping mechanism is mounted on the second coupling component of the adjustment mechanism.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: A multi-mode scanning device for scanning an original includes a non-transparent element, a first light source, a second light source and an optical module. The first light source outputs visible light to irradiate the non-transparent element and the original to generate first light and second light, respectively. The second light source outputs invisible light to irradiate a combination of the non-transparent element and the original to generate third light and fourth light. The optical module receives the first light, the second light, the third light and the fourth light and generates sensing signals representative of visible light information and invisible light information of the original. The original is disposed between the non-transparent element and the optical module. The first light source and the optical module are disposed on a same side of the non-transparent element.