Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Abstract: Circuitry for use in aligning bytes in a serial data signal (e.g., with deserializer circuitry that operates in part in response to a byte rate clock signal) includes a multistage shift register for shifting the serial data signal through a number of stages at least equal to (and in many cases, preferably more than) the number of bits in a byte. The output signal of any shift register stage can be selected as the output of this “bit slipping” circuitry so that any number of bits over a fairly wide range can be “slipped” to produce or help produce appropriately aligned bytes. The disclosed bit slipping circuitry is alternatively or additionally usable in helping to align (“deskew”) two or more serial data signals that are received via separate communication channels.

Abstract: Circuitry for use in aligning bytes in a serial data signal (e.g., with deserializer circuitry that operates in part in response to a byte rate clock signal) includes a multistage shift register for shifting the serial data signal through a number of stages at least equal to (and in many cases, preferably more than) the number of bits in a byte. The output signal of any shift register stage can be selected as the output of this “bit slipping” circuitry so that any number of bits over a fairly wide range can be “slipped” to produce or help produce appropriately aligned bytes. The disclosed bit slipping circuitry is alternatively or additionally usable in helping to align (“deskew”) two or more serial data signals that are received via separate communication channels.

Abstract: Circuitry for use in aligning bytes in a serial data signal (e.g., with deserializer circuitry that operates in part in response to a byte rate clock signal) includes a multistage shift register for shifting the serial data signal through a number of stages at least equal to (and in many cases, preferably more than) the number of bits in a byte. The output signal of any shift register stage can be selected as the output of this “bit slipping” circuitry so that any number of bits over a fairly wide range can be “slipped” to produce or help produce appropriately aligned bytes. The disclosed bit slipping circuitry is alternatively or additionally usable in helping to align (“deskew”) two or more serial data signals that are received via separate communication channels.

Abstract: The present invention discloses an electrode of a biosensor, a manufacturing method thereof, and a biosensor thereof. The electrode of the biosensor comprises a flexible insulation layer, a resin layer, a first metal layer, a second metal layer, a third metal layer and a fourth metal layer. The resin layer is disposed between the flexible insulating layer and the first metal layer. The second metal layer is disposed between the first metal layer and the third metal layer, and the fourth metal layer is disposed on the third metal layer. The material of the first metal layer comprises copper foil. The material of the second metal layer comprises palladium. The material of the third metal layer comprises nickel, and the material of the fourth metal layer comprises gold or palladium. The electrode further comprises a biological active substance immobilized on the surface of the plurality of metal layers.

Abstract: The present invention discloses an electrode of a biosensor, a manufacturing method thereof, and a biosensor thereof. The electrode of the biosensor comprises a flexible insulation layer, a resin layer, a first metal layer, a second metal layer, a third metal layer and a fourth metal layer. The resin layer is disposed between the flexible insulating layer and the first metal layer. The second metal layer is disposed between the first metal layer and the third metal layer, and the fourth metal layer is disposed on the third metal layer. The material of the first metal layer comprises copper foil. The material of the second metal layer comprises palladium. The material of the third metal layer comprises nickel, and the material of the fourth metal layer comprises gold or palladium. The electrode further comprises a biological active substance immobilized on the surface of the plurality of metal layers.

Abstract: Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE-Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.

Abstract: Dynamic phase alignment circuitry selects from among several, phase-distributed, candidate clock signals the one of those signals that is currently best for use in controlling the timing of sampling of a serial data signal to recover the data from that signal. The circuitry selects two phase-adjacent ones of the candidate clock signals that are currently the two best candidates for final selection. The circuitry makes a final selection of the generally better one of these two best candidates in a way that avoids unproductive switching back and forth between these two best candidates.

Abstract: Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE-Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.

Abstract: Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE-Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.

Abstract: Dynamic phase alignment circuitry selects from among several, phase-distributed, candidate clock signals the one of those signals that is currently best for use in controlling the timing of sampling of a serial data signal to recover the data from that signal. The circuitry selects two phase-adjacent ones of the candidate clock signals that are currently the two best candidates for final selection. The circuitry makes a final selection of the generally better one of these two best candidates in a way that avoids unproductive switching back and forth between these two best candidates.

Abstract: Dynamic phase alignment circuitry selects from among several, phase-distributed, candidate clock signals the one of those signals that is currently best for use in controlling the timing of sampling of a serial data signal to recover the data from that signal. The circuitry selects two phase-adjacent ones of the candidate clock signals that are currently the two best candidates for final selection. The circuitry makes a final selection of the generally better one of these two best candidates in a way that avoids unproductive switching back and forth between these two best candidates.

Abstract: Circuitry for use in aligning bytes in a serial data signal (e.g., with deserializer circuitry that operates in part in response to a byte rate clock signal) includes a multistage shift register for shifting the serial data signal through a number of stages at least equal to (and in many cases, preferably more than) the number of bits in a byte. The output signal of any shift register stage can be selected as the output of the “bit slipping” circuitry so that any number of bits over a fairly wide range can be “slipped” to produce or help produce appropriately aligned bytes. The disclosed bit slipping circuitry is alternatively or additionally usable in helping to align (“deskew”) two or more serial data signals that are received via separate communication channels.

Abstract: A PLL circuit is described. The PLL circuit includes: a signal generator and at least one divider coupled to the signal generator, where the at least one divider is programmable in user mode. In one embodiment, the PLL circuit includes a memory device associated with the at least one divider, where the memory device receives settings data and provides settings data to the at least one divider in user mode.

Abstract: At least some of the interconnection signaling on a programmable logic device (“PLD”) is by differential signaling using differential driver circuitry to apply differential signals to a pair of conductors that extend to differential receiver circuitry. Such differential interconnection signaling helps the PLD operate satisfactorily with lower power supply voltages. The conductors in each differential signaling pair may cross over one another at various intervals in order to help reduce the adverse effects of capacitive coupling between adjacent and parallel signaling paths.

Abstract: Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE−Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.

Abstract: At least some of the interconnection signaling on a programmable logic device (“PLD”) is by differential signaling using differential driver circuitry to apply differential signals to a pair of conductors that extend to differential receiver circuitry. Such differential interconnection signaling helps the PLD operate satisfactorily with lower power supply voltages. The conductors in each differential signaling pair may cross over one another at various intervals in order to help reduce the adverse effects of capacitive coupling between adjacent and parallel signaling paths.