Abstract: A method of forming a carbon nanotube array substrate is disclosed. One embodiment comprises depositing a composite catalyst layer on the substrate, oxidizing the composite catalyst layer, reducing the oxidized composite catalyst layer, and growing the array on the composite catalyst layer. The composite catalyst layer may comprise a group VIII element and a non-catalytic element deposited onto the substrate from an alloy. In another embodiment, the composite catalyst layer comprises alternating layers of iron and a lanthanide, preferably gadolinium or lanthanum. The composite catalyst layer may be reused to grow multiple carbon nanotube arrays without additional processing of the substrate. The method may comprise bulk synthesis by forming carbon nanotubes on a plurality of particulate substrates having a composite catalyst layer comprising the group VIII element and the non-catalytic element. In another embodiment, the composite catalyst layer is deposited on both sides of the substrate.

Abstract: A method of forming a carbon nanotube array substrate is disclosed. One embodiment comprises depositing a composite catalyst layer on the substrate, oxidizing the composite catalyst layer, reducing the oxidized composite catalyst layer, and growing the array on the composite catalyst layer. The composite catalyst layer may comprise a group VIII element and a non-catalytic element deposited onto the substrate from an alloy. In another embodiment, the composite catalyst layer comprises alternating layers of iron and a lanthanide, preferably gadolinium or lanthanum. The composite catalyst layer may be reused to grow multiple carbon nanotube arrays without additional processing of the substrate. The method may comprise bulk synthesis by forming carbon nanotubes on a plurality of particulate substrates having a composite catalyst layer comprising the group VIII element and the non-catalytic element. In another embodiment, the composite catalyst layer is deposited on both sides of the substrate.

Abstract: A method of forming a carbon nanotube array on a substrate is disclosed. One embodiment of the method comprises depositing a composite catalyst layer on the substrate, oxidizing the composite catalyst layer, reducing the oxidized composite catalyst layer, and growing the array on the composite catalyst layer. The composite catalyst layer may comprise a group VIII element and a non-catalytic element deposited onto the substrate from an alloy. In another embodiment, the composite catalyst layer comprises alternating layers of iron and a lanthanide, preferably gadolinium or lanthanum. The composite catalyst layer may be reused to grow multiple carbon nanotube arrays without additional processing of the substrate. The method may comprise bulk synthesis by forming carbon nanotubes on a plurality of particulate substrates having a composite catalyst layer comprising the group VIII element and the non-catalytic element. In another embodiment, the composite catalyst layer is deposited on both sides of the substrate.

Abstract: A method of forming a carbon nanotube array on a substrate is disclosed. One embodiment of the method comprises depositing a composite catalyst layer on the substrate, oxidizing the composite catalyst layer, reducing the oxidized composite catalyst layer, and growing the array on the composite catalyst layer. The composite catalyst layer may comprise a group VIII element and a non-catalytic element deposited onto the substrate from an alloy. In another embodiment, the composite catalyst layer comprises alternating layers of iron and a lanthanide, preferably gadolinium or lanthanum. The composite catalyst layer may be reused to grow multiple carbon nanotube arrays without additional processing of the substrate. The method may comprise bulk synthesis by forming carbon nanotubes on a plurality of particulate substrates having a composite catalyst layer comprising the group VIII element and the non-catalytic element. In another embodiment, the composite catalyst layer is deposited on both sides of the substrate.

Abstract: The present invention provides an apparatus for deposition of thin films on a plurality of wafers through an atomic layer epitaxial process within a reaction chamber. The apparatus has a susceptor, provided within the reaction chamber to hold the wafers and has of a plurality of wafer stations. A plurality of wafer seating units are provided in the wafer stations, and seat the wafers in the wafer stations. A gas ejecting unit is provided within the reaction chamber, and ejects reaction gases onto the reaction surfaces of the wafers. A gas feeding unit feeds the reaction gases to the gas ejecting unit at predetermined time intervals so as to allow the gas ejecting unit to alternately eject the reaction gases through each of two gas outlets into the reaction chamber. A susceptor drive unit rotates the susceptor at a predetermined velocity and vertically moves the susceptor to an upper optimal reaction position close to the ceiling of the reaction chamber.