Patents by Inventor Yeo Jin Yoon

Yeo Jin Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150243706
    Abstract: An exemplary light emitting diode includes a substrate; a first light emitting cell and a second light emitting cell disposed over the substrate and separated from each other; and an interconnection electrically connecting the first light emitting cell to the second light emitting cell. Each of the first and second light emitting cells includes a first conductive-type semiconductor layer, a second conductive-type semiconductor layer disposed over the first conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer. At least one of the first light emitting cell and the second light emitting cell includes a side surface inclined with respect to the substrate. The side surface includes a first inclined portion forming an acute angle with respect to the substrate, a second inclined portion forming an obtuse angle with respect to the substrate, and an inclination discontinuity section.
    Type: Application
    Filed: February 25, 2015
    Publication date: August 27, 2015
    Inventors: Se Hee Oh, Seom Geun Lee, Yeo Jin Yoon, Hyun Haeng Lee, Mae Yi Kim
  • Publication number: 20150236210
    Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer, a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Application
    Filed: February 24, 2015
    Publication date: August 20, 2015
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Publication number: 20150236216
    Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.
    Type: Application
    Filed: April 30, 2015
    Publication date: August 20, 2015
    Inventors: Ye Seul Kim, Da Yeon Jeong, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh
  • Patent number: 9111840
    Abstract: Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.
    Type: Grant
    Filed: October 14, 2013
    Date of Patent: August 18, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jeong Hun Heo, Yeo Jin Yoon, Joo Won Choi, Joon Hee Lee, Chang Yeon Kim, Su Young Lee
  • Patent number: 9112102
    Abstract: Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.
    Type: Grant
    Filed: October 30, 2013
    Date of Patent: August 18, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Kyung Wan Kim, Tae Kyoon Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Jin Woong Lee, In Soo Kim
  • Patent number: 9093627
    Abstract: Exemplary embodiments of the present invention provide a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other, a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light emitting cell, a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and the insulation layer are connected to each other.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: July 28, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Seom Geun Lee, Jong Kyu Kim, Yeo Jin Yoon, Jae Kwon Kim, Mae Yi Kim
  • Patent number: 9093617
    Abstract: An AC light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. A first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip, and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence period of the second long-persistent phosphor is different from that of the first long-persistent phosphor.
    Type: Grant
    Filed: June 3, 2014
    Date of Patent: July 28, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Chung Hoon Lee, Yeo Jin Yoon, Dae Won Kim, Dae Sung Cho, Kyung Hee Ye
  • Publication number: 20150187996
    Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
    Type: Application
    Filed: March 11, 2015
    Publication date: July 2, 2015
    Inventors: Won Cheol Seo, Dae Sung Cho, Kyung Hee Ye, Kyoung Wan Kim, Yeo Jin Yoon
  • Publication number: 20150179879
    Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.
    Type: Application
    Filed: March 6, 2015
    Publication date: June 25, 2015
    Inventors: Jeong Hee Yang, Kyoung Wan Kim, Yeo Jin Yoon, Jae Moo Kim, Keum Ju Lee
  • Patent number: 9059015
    Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: June 16, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Won Cheol Seo, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheul Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
  • Publication number: 20150144981
    Abstract: A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light.
    Type: Application
    Filed: January 28, 2015
    Publication date: May 28, 2015
    Inventors: Duk Il Suh, Jae Moo Kim, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Jin Woong Lee
  • Patent number: 9041038
    Abstract: Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.
    Type: Grant
    Filed: December 6, 2013
    Date of Patent: May 26, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Tae Kyoon Kim
  • Patent number: 9030090
    Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.
    Type: Grant
    Filed: February 19, 2011
    Date of Patent: May 12, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jeong Hee Yang, Kyoung Wan Kim, Yeo Jin Yoon, Jae Moo Kim, Keum Ju Lee
  • Patent number: 9025893
    Abstract: Provided are a method and an apparatus for encoding images using template matching and a method and an apparatus for decoding images. The method for encoding the images can determine a template of an encoding target block and can determine a matching search target image for performing a matching search with the determined template among the recovered reference images. In addition, an optimum prediction block can be determined on the basis of the determined matching search target image and the template of the encoding target block.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: May 5, 2015
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Ha Hyun Lee, Sung Chang Lim, Hui Yong Kim, Se Yoon Jeong, Jong Ho Kim, Jin Ho Lee, Suk Hee Cho, Jin Soo Choi, Jin Woong Kim, Chie Teuk Ahn, Sung Jea Ko, Seung Won Jung, Yeo Jin Yoon
  • Patent number: 9024345
    Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.
    Type: Grant
    Filed: April 5, 2011
    Date of Patent: May 5, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Da Yeon Jeong, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh
  • Patent number: 9018669
    Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: April 28, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Won Cheol Seo, Dae Sung Cho, Kyung Hee Ye, Kyoung Wan Kim, Yeo Jin Yoon
  • Patent number: 9012952
    Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: April 21, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Won Cheol Seo, Dae Sung Cho, Kyung Hee Ye, Kyoung Wan Kim, Yeo Jin Yoon
  • Publication number: 20150102367
    Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20° to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20° to 80° from a horizontal plane.
    Type: Application
    Filed: November 21, 2014
    Publication date: April 16, 2015
    Inventors: Jong Lam LEE, Jae Ho LEE, Yeo Jin YOON, Eu Jin HWANG, Dae Won KIM
  • Publication number: 20150091038
    Abstract: A light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode formed on another region of the upper semiconductor layer, to supply electric current to the upper semiconductor layer. The first electrode includes an electrode pad disposed on the upper semiconductor layer and an extension extending from the electrode pad to the exposed lower semiconductor layer. The insulation layer may have a distributed Bragg reflector structure.
    Type: Application
    Filed: December 5, 2014
    Publication date: April 2, 2015
    Inventors: Yeo Jin Yoon, Won Cheol Seo
  • Patent number: 8987772
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: March 24, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang-Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo