Abstract: A sample holder for a transmission electron microscope may include: a column part that extends in a first direction; a stage configured to receive a sample, the stage disposed at a first end portion of the column part; a motor part disposed at a second end portion of the column part; and a thermoelectric cooling device disposed inside the column part.

Abstract: An image sensor is disclosed. The image sensor includes a semiconductor substrate, a plurality of pillars protruding from the semiconductor substrate, and spaced from each other, a spacer layer on the semiconductor substrate and a sidewall of each of the plurality of pillars, a plurality of gate structures on the spacer layer, and a plurality of unit pixels arranged in a matrix form. The first unit pixel includes a first photodiode (PD) formed in the semiconductor substrate, a first pillar, a second pillar and a third pillar of the plurality of pillars, and a first gate structure and a second gate structure of the plurality of gate structures. Each of the first pillar and the second pillar includes a first channel region and a first drain region on the first channel region. The third pillar is not surround by any gate structure of the plurality of gate structures.

Abstract: A sample holder includes a head, a first holding plate extending in a first direction from one surface of the head and including at least one first sample hole configured to accommodate at least one first sample and a first main surface configured such that the at least one first sample accommodated in the at least one first sample hole is exposed at the first main surface, and a second holding plate extending in the first direction from the one surface of the head and including at least one second sample hole configured to accommodate at least one second sample and a second main surface configured such that the at least one second sample accommodated in the at least one second sample hole is exposed at the second main surface, wherein a direction perpendicular to the first main surface of the first holding plate differs from a direction perpendicular to the second main surface of the second holding plate.

Abstract: An image sensor may include a first substrate having first and second surfaces and including unit pixel regions, each of which includes a device isolation pattern and a photoelectric conversion region adjacent to the first surface of the first substrate, a pixel isolation pattern provided in the first substrate to define the unit pixel regions and to penetrate the device isolation pattern, a first impurity region and a floating diffusion region provided in the first substrate and adjacent to the first surface, a second substrate provided on the first substrate to have third and fourth surfaces, a second impurity region provided in the second substrate and adjacent to the third surface, and ground and body contacts coupled to the first and second impurity regions, respectively. The ground contact and the body contact may be electrically separated from each other.

Abstract: An image sensor is disclosed. The image sensor includes first, second, third and fourth unit pixels. Each of the unit pixels includes a first transfer transistor structure, a second transfer transistor structure and a third transfer transistor structure, a first source follower transistor structure, a second source follower transistor structure and a third source follower transistor structure, and a first selection transistor structure, a second selection transistor structure and a third selection transistor structure, the fourth unit pixel includes a fourth transfer transistor structure and a reset transistor structure, and each of the transfer transistor structures includes a channel electrode and a gate structure that surrounds side surfaces of the channel electrode.