Abstract: An embedded package includes a first semiconductor chip having a first conductive line which has a first sunken area, a second semiconductor chip having a second conductive line which has a second sunken area, wherein the first semiconductor chip and the second semiconductor chip are arranged facing each other, and wherein the first sunken area and the second sunken area are arranged facing each other, a core layer surrounding the first semiconductor chip and the second semiconductor chip, wherein the core layer has a first circuit pattern coupled to an external terminal; and a bump formed in the first and second sunken areas, wherein the bump is coupled to the first circuit pattern.

Abstract: An embedded package includes a first semiconductor chip having a first conductive line which has a first sunken area, a second semiconductor chip having a second conductive line which has a second sunken area, wherein the first semiconductor chip and the second semiconductor chip are arranged facing each other, and wherein the first sunken area and the second sunken area are arranged facing each other, a core layer surrounding the first semiconductor chip and the second semiconductor chip, wherein the core layer has a first circuit pattern coupled to an external terminal; and a bump formed in the first and second sunken areas, wherein the bump is coupled to the first circuit pattern.

Abstract: A semiconductor device having no voids and a semiconductor package using the same is described. The semiconductor device includes a semiconductor chip having a circuit section which is formed in a first area and a peripheral section which is formed in a second area defined around the first area, and an insulation layer covering the first and second areas and having at least one void removing part which extends from the first area to the second area to prevent a void from being formed.

Abstract: A semiconductor device having no voids and a semiconductor package using the same is described. The semiconductor device includes a semiconductor chip having a circuit section which is formed in a first area and a peripheral section which is formed in a second area defined around the first area, and an insulation layer covering the first and second areas and having at least one void removing part which extends from the first area to the second area to prevent a void from being formed.

Abstract: A semiconductor device having no voids and a semiconductor package using the same is described. The semiconductor device includes a semiconductor chip having a circuit section which is formed in a first area and a peripheral section which is formed in a second area defined around the first area, and an insulation layer covering the first and second areas and having at least one void removing part which extends from the first area to the second area to prevent a void from being formed.

Abstract: A semiconductor device having no voids and a semiconductor package using the same is described. The semiconductor device includes a semiconductor chip having a circuit section which is formed in a first area and a peripheral section which is formed in a second area defined around the first area, and an insulation layer covering the first and second areas and having at least one void removing part which extends from the first area to the second area to prevent a void from being formed.

Abstract: A semiconductor device having no voids and a semiconductor package using the same is described. The semiconductor device includes a semiconductor chip having a circuit section which is formed in a first area and a peripheral section which is formed in a second area defined around the first area, and an insulation layer covering the first and second areas and having at least one void removing part which extends from the first area to the second area to prevent a void from being formed.

Abstract: A semiconductor device having no voids and a semiconductor package using the same is described. The semiconductor device includes a semiconductor chip having a circuit section which is formed in a first area and a peripheral section which is formed in a second area defined around the first area, and an insulation layer covering the first and second areas and having at least one void removing part which extends from the first area to the second area to prevent a void from being formed.

Abstract: A static electricity removal apparatus capable of raising an alternating rate at which ions are generated according to the speed of an object requiring static electricity removal using a high-frequency high voltage AC voltage includes: at least one discharge electrode assembly having a plurality of needle-shaped electrodes aligned with each other, each needle-shaped electrode receiving the high-frequency high voltage AC voltage and generating ions using a corona discharge; a ground electrode for facilitating ion generation by the plurality of needle-shaped electrodes; a high-frequency high voltage generation unit connected to the at least one discharge electrode assembly, the voltage generation unit generating the high-frequency high voltage AC voltage outputted to the plurality of needle-shaped electrodes; and an ion blower adapted to blow ions from the plurality of needle-shaped electrodes to the object requiring static electricity removal.

Abstract: The present invention relates to a static electricity removal apparatus which is capable of raising an alternating rate at which ions are generated according to the speed of the charged objects using a high-frequency high AC voltage, resulting in an increase in a static electricity removing efficiency. The static electricity removal apparatus comprises at least one discharge electrode assembly including a plurality of needle-shaped electrodes aligned with each other, each of the needle-shaped electrodes generating ions using a corona discharge under the condition that it is provided with a high-frequency high AC voltage, a ground electrode for inducing ion generation by each of the needle-shaped electrodes, and a high-frequency high voltage generation unit connected to the discharge electrode assembly, the voltage generation unit generating the high-frequency high AC voltage to be provided to each of the needle-shaped electrodes of the discharge electrode assembly.