Abstract: The present invention relates to a sulfate of a compound of chemical formula 1, and a crystalline form thereof. The sulfate of the compound of chemical formula 1, according to the present invention, has much higher solubility than other salts thereof, and exhibits excellent stability and absorption into the body. In addition, such a sulfate can form various crystalline forms, and these crystalline forms are also stable and undergo almost no reduction in purity, even after long-term storage under various conditions, and thus are useful for storage.

Abstract: The present disclosure relates to a citrate synthase variant, a microorganism comprising the variant, and a method for producing L-amino acids using the microorganism.

Abstract: The present invention relates to a functional pressure-sensitive composition having high heat resistance and bending resistance characteristics, including: 40 to 55 wt % of a urethane acrylate oligomer, 30 to 44 wt % of an acrylate monomer, 2 to 5 wt % of a photoinitiator, 0.2 to 2 wt % of a silane coupling agent, 0.1 to 1 wt % of a light stabilizer, 0.1 to 1 wt % of an ultraviolet absorber and 0.1 to 1 wt % of an antioxidant, and an electrical component with a 3D structure using the same.

Abstract: The present disclosure relates to a novel citrate synthase variant, a microorganism comprising the variant, and a method for producing L-amino acids using the microorganism.

Abstract: A bitline sense amplifier including: an amplifier which is connected between a first sensing bitline and a second sensing bitline, and detects and amplifies a voltage difference between a first bitline and a second bitline in response to a first control signal and a second control signal; and an equalizer which is connected between a first supply line through which the first control signal is supplied and a second supply line through which the second control signal is supplied, and pre-charges the first bitline and the second bitline with a precharge voltage in response to an equalizing control signal, wherein the equalizer includes an equalizing enable transistor in which a source terminal is connected to the first supply line and performs equalizing in response to the equalizing control signal.

Abstract: Semiconductor devices, such as memory devices, and associated systems and methods, are disclosed herein. A representative memory device includes a substrate including circuitry, back-end contacts electrically coupled to the circuitry, and front-end contacts. The front-end contacts are configured to receive electrical signals from an external device via a front-end interface. Individual ones of the front-end contacts are electrically coupled to and aligned along an axis with corresponding ones of the back-end contacts.

Abstract: Provided is a personalized node ranking (PNR) system and method using random walk. In detail, a personalized ranking method using random walk includes verifying whether propagation of a positive score or a negative score of a currently-visiting node is trustworthy based on an edge sign between a seed node and a next-visiting node predicted by using a classification model, and when the propagation is trustworthy according to the verification, propagating a score by using a first score propagation method based on balance theory, and when the propagation is untrustworthy according to the verification, propagating a score by using a second score propagation method based on a ratio between a balanced triangle and an unbalanced triangle of a signed network.

Abstract: A neuromorphic device includes: a neuron block unit including a plurality of neurons; a synapse block unit including a plurality of synapses; and a topology block unit including a plurality of parallel Look-Up Table (LUT) modules including pre and post neuron elements configured with addresses of a presynaptic neuron and a postsynaptic neuron. Each of the plurality of neurons has an intrinsic address, each of the plurality of synapses has an intrinsic address. The parallel LUT module is partitioned based on a first synapse address among synapse addresses, and each of the partitions is indexed based on a second synapse address among the synapse addresses.

Abstract: Provided is a reconfigurable logic device using an electrochemical potential. The device includes first and second semiconductor channels, where an effective magnetic field direction of a channel is controlled by a current direction and which are spaced apart from each other, a first ferromagnetic gate contacting the first semiconductor channel and a second ferromagnetic gate contacting the second semiconductor channel, where a magnetization direction is controlled by a gate voltage, and a control unit configured to calculate a difference value corresponding to a difference between a first determination value and a second determination value, and compare the difference value with a reference value to determine an output value.

Abstract: Provided is a reconfigurable logic device using an electrochemical potential. The device includes first and second semiconductor channels, where an effective magnetic field direction of a channel is controlled by a current direction and which are spaced apart from each other, a first ferromagnetic gate contacting the first semiconductor channel and a second ferromagnetic gate contacting the second semiconductor channel, where a magnetization direction is controlled by a gate voltage, and a control unit configured to calculate a difference value corresponding to a difference between a first determination value and a second determination value, and compare the difference value with a reference value to determine an output value.

Abstract: The present disclosure provides a burner for a reduction reactor, the reduction reactor has a reaction space formed therein, wherein each burner has a fuel feeding hole and multiple oxygen feeding holes formed therein, wherein each burner has an elongate combustion space formed at one end of a head portion thereof, the combustion space fluid-communicating with the reaction space of the reactor, wherein the elongate combustion space has a length such that oxygen supplied from the oxygen feeding holes thereto is completely consumed via oxidation or combustion with fuels supplied from the fuel feeding hole thereto only in the elongate combustion space upon igniting the burner.

Abstract: A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate, having an elongate shape in a first direction and having a cross section, cut along a second direction that is perpendicular to the first direction, in the shape of a triangle; a source electrode located on the substrate and intersecting the transfer channel, the source electrode covering part of the transfer channel; and a drain electrode spaced apart from the source electrode on the substrate, the drain electrode intersecting the transfer channel and covering part of the transfer channel.

Abstract: A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate, having an elongate shape in a first direction and having a cross section, cut along a second direction that is perpendicular to the first direction, in the shape of a triangle; a source electrode located on the substrate and intersecting the transfer channel, the source electrode covering part of the transfer channel; and a drain electrode spaced apart from the source electrode on the substrate, the drain electrode intersecting the transfer channel and covering part of the transfer channel.

Abstract: A system for outputting content through a network includes: a first server configured to store content received in an account of a user; and a second server configured to obtain the content from the first server, convert the content into output data, and transmit the output data to an output device, according to an output request received from a mobile terminal of the user, wherein when the second server receives a request to check the content from the mobile terminal, the second server provides a preview of the content, instead of an original file of the content, to the mobile terminal.

Abstract: The present disclosure provides a burner for a reduction reactor, the reduction reactor has a reaction space formed therein, wherein each burner has a fuel feeding hole and multiple oxygen feeding holes formed therein, wherein each burner has an elongate combustion space formed at one end of a head portion thereof, the combustion space fluid-communicating with the reaction space of the reactor, wherein the elongate combustion space has a length such that oxygen supplied from the oxygen feeding holes thereto is completely consumed via oxidation or combustion with fuels supplied from the fuel feeding hole thereto only in the elongate combustion space upon igniting the burner.

Abstract: A system for outputting content through a network includes: a first server configured to store content received in an account of a user; and a second server configured to obtain the content from the first server, convert the content into output data, and transmit the output data to an output device, according to an output request received from a mobile terminal of the user, wherein when the second server receives a request to check the content from the mobile terminal, the second server provides a preview of the content, instead of an original file of the content, to the mobile terminal.

Abstract: A non-volatile reconfigurable logic device executing logical operations and a memory function and controlled by a magnetic field is provided. The reconfigurable logic device includes i) at least one semiconductor device; and ii) a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device. The semiconductor device includes i) a first semiconductor layer; and ii) a second semiconductor layer located on the first semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer.

Abstract: A complementary device including a gate electrode, a channel, a source electrode connected to the gate electrode and the channel, and a first drain electrode and a second drain electrode connected to the gate electrode and the channel is provided. The first/second drain electrode is formed so that, in accordance with a voltage applied to the gate electrode, electron spins injected into the source electrode are moved from the source electrode to the first/second drain electrode through the channel while rotating in a first/second direction. Directions of the electron spins that reach the first drain electrode and the second drain electrode are opposite to each other.

Abstract: A complementary device including a gate electrode, a channel, a source electrode connected to the gate electrode and the channel, and a first drain electrode and a second drain electrode connected to the gate electrode and the channel is provided. The first/second drain electrode is formed so that, in accordance with a voltage applied to the gate electrode, electron spins injected into the source electrode are moved from the source electrode to the first/second drain electrode through the channel while rotating in a first/second direction. Directions of the electron spins that reach the first drain electrode and the second drain electrode are opposite to each other.

Abstract: A non-volatile reconfigurable logic device executing logical operations and a memory function and controlled by a magnetic field is provided. The reconfigurable logic device includes i) at least one semiconductor device; and ii) a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device. The semiconductor device includes i) a first semiconductor layer; and ii) a second semiconductor layer located on the first semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer.