Patents by Inventor Yeon-Dong Choi

Yeon-Dong Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photoresist pattern, method of fabricating the same, and method of assuring the quality thereof
    Publication number: 20060105476
    Abstract: A photoresist pattern and a method of fabricating the same make it easy to quickly identify a particular portion of a photolithography process that is responsible for causing process defects. The method of fabricating the photoresist pattern includes forming main patterns having a predetermined critical dimension in device-forming regions of a semiconductor substrate, and forming a plurality of test patterns in scribe regions of the substrate. The scribe regions are defined alongside the device-forming regions and separate the device-forming regions from one another. The test patterns have shapes similar to that of the main patterns. Also, one of the test patterns has a critical dimensions similar to that of the main patterns, and other test patterns have respective critical dimensions that are different from the critical dimension of the main patterns.
    Type: Application
    Filed: December 29, 2005
    Publication date: May 18, 2006
    Inventors: Yeon-Dong Choi, Kyoung-Yun Baek
  • Photoresist pattern, method of fabricating the same, and method of assuring the quality thereof
    Patent number: 7012031
    Abstract: A photoresist pattern and a method of fabricating the same make it easy to quickly identify a particular portion of a photolithography process that is responsible for causing process defects. The method of fabricating the photoresist pattern includes forming main patterns having a predetermined critical dimension in device-forming regions of a semiconductor substrate, and forming a plurality of test patterns in scribe regions of the substrate. The scribe regions are defined alongside the device-forming regions and separate the device-forming regions from one another. The test patterns have shapes similar to that of the main patterns. Also, one of the test patterns has a critical dimensions similar to that of the main patterns, and other test patterns have respective critical dimensions that are different from the critical dimension of the main patterns.
    Type: Grant
    Filed: January 3, 2005
    Date of Patent: March 14, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yeon-Dong Choi, Kyoung-Yun Baek
  • Photoresist pattern, method of fabricating the same, and method of assuring the quality thereof
    Publication number: 20050153466
    Abstract: A photoresist pattern and a method of fabricating the same make it easy to quickly identify a particular portion of a photolithography process that is responsible for causing process defects. The method of fabricating the photoresist pattern includes forming main patterns having a predetermined critical dimension in device-forming regions of a semiconductor substrate, and forming a plurality of test patterns in scribe regions of the substrate. The scribe regions are defined alongside the device-forming regions and separate the device-forming regions from one another. The test patterns have shapes similar to that of the main patterns. Also, one of the test patterns has a critical dimensions similar to that of the main patterns, and other test patterns have respective critical dimensions that are different from the critical dimension of the main patterns.
    Type: Application
    Filed: January 3, 2005
    Publication date: July 14, 2005
    Inventors: Yeon-Dong Choi, Kyoung-Yun Baek