Abstract: The present invention relates to a method and system for controlling a wind farm when a ramp up or ramp down rate of the wind farm does not satisfy a grid-code or corresponding criteria due to an abrupt change in wind speed. The method and system for controlling a wind farm includes the steps of measuring speed and direction of wind performed outside the wind farm, sequentially controlling wind turbines if the wind speed abruptly changes considering a time for the wind to arrive at the wind turbines, determining the number of wind turbines to be controlled simultaneously so that the wind farm may satisfy the grid-code at this point, grouping the wind turbines, determining a control sequence and a control time of each group, and adjusting a control end time if stopping times of adjacent groups are overlapped when the wind turbines are stopped.

Abstract: The present invention relates to a method and system for controlling a wind farm when a ramp up or ramp down rate of the wind farm does not satisfy a grid-code or corresponding criteria due to an abrupt change in wind speed. The method and system for controlling a wind farm includes the steps of measuring speed and direction of wind performed outside the wind farm, sequentially controlling wind turbines if the wind speed abruptly changes considering a time for the wind to arrive at the wind turbines, determining the number of wind turbines to be controlled simultaneously so that the wind farm may satisfy the grid-code at this point, grouping the wind turbines, determining a control sequence and a control time of each group, and adjusting a control end time if stopping times of adjacent groups are overlapped when the wind turbines are stopped.

Abstract: A photovoltaic fiber may include a first electrode surrounding a base fiber, a photoactive layer surrounding the first electrode and having a photovoltaic junction positioned in a radial direction. The photovoltaic fiber may also include a second electrode surrounding the photoactive layer is provided.

Abstract: A solar cell including: a semiconductor substrate, a passivation film disposed on a side of the semiconductor substrate, a protective layer disposed on a side of the passivation film opposite the semiconductor substrate, and an electrode disposed on a side of the protective layer opposite the passivation film, wherein the electrode includes a product of a conductive paste including glass frit and a conductive material, and wherein the protective layer includes a material having an absolute value of a Gibb's free energy which is less than an absolute value of a Gibb's free energy of each component of the glass frit.

Abstract: Solar cells and methods of manufacturing the same, the solar cells include a plurality of nanowire heterostructures, wherein each of the plurality of nanowire heterostructures includes a nanowire including at least one p-type nanowire layer and at least one n-type nanowire layer, and a semiconductor material layer disposed on the nanowire. The semiconductor material layer constitutes a p-n junction with the p-type or n-type nanowire layer. The semiconductor material layer includes at least one of the p-type material layer and the n-type material layer.

Abstract: Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.

Abstract: Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

Abstract: Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.

Abstract: A method of etching a metal oxide layer formed on a metal layer is provided. The method includes mounting a specimen having the metal oxide layer and a photoresist on the metal oxide layer in a reaction chamber, wherein the metal oxide layer is formed on the metal layer and a pattern is formed on the photoresist. Primary etching of the metal oxide layer exposed by the photoresist may be performed using Cl2 gas in an inductively coupled plasma method. Secondary etching of residues remaining on an etched region of the metal oxide layer may be performed using BCl3 gas in the inductively coupled plasma method.

Abstract: Provided is a method of fabricating a laser diode.

Abstract: A semiconductor laser diode and a method of fabricating the same are provided. The semiconductor laser diode includes: a substrate; a predetermined compound semiconductor layer formed on the substrate; a lower cladding layer formed on the compound semiconductor layer; an active layer formed on the lower cladding layer; an upper cladding layer formed on the active layer and having a ridge formed in the middle thereof; trenches formed to a predetermined depth on at least one side of the ridge to penetrate the active layer from the upper cladding layer; a current blocking layer formed on surfaces of the upper cladding layer, except a top surface of the ridge, and inner walls of the trenches; a contact layer formed on the top surface of the ridge; and a first electrode formed on top surfaces of the contact layer and the current blocking layer.

Abstract: Provided is a method of fabricating a laser diode.

Abstract: An ortho-alkylation method of an aromatic ketone. In the method, as starting materials, the aromatic ketone is reacted with aliphatic or aromatic alkyl moiety-containing olefins in the presence of a primary amine and a transition metal catalyst as reaction catalysts, or ketimines resulting from a reaction of aromatic ketones with a primary amine are reacted with aliphatic or aromatic alkyl moiety-containing olefins in the presence of a transition metal catalyst, thereby introducing the alkyl moiety to the ortho-position of the aromatic ketone.