Patents by Inventor Yeon-Jin Gil

Yeon-Jin Gil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11887868
    Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.
    Type: Grant
    Filed: March 29, 2021
    Date of Patent: January 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-hoo Kim, Sang-jine Park, Yong-jhin Cho, Yeon-jin Gil, Ji-hoon Jeong, Byung-kwon Cho, Yong-sun Ko, Kun-tack Lee
  • Publication number: 20210217635
    Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.
    Type: Application
    Filed: March 29, 2021
    Publication date: July 15, 2021
    Inventors: Young-hoo Kim, Sang-jine PARK, Yong-jhin CHO, Yeon-jin GIL, Ji-hoon JEONG, Byung-kwon CHO, Yong-sun KO, Kun-tack LEE
  • Patent number: 10985036
    Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: April 20, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Hoo Kim, Sang-Jine Park, Yong-Jhin Cho, Yeon-Jin Gil, Ji-Hoon Jeong, Byung-Kwon Cho, Yong-Sun Ko, Kun-Tack Lee
  • Patent number: 10818522
    Abstract: Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: October 27, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-Jine Park, Byung-Kwon Cho, Yong-Jhin Cho, Yong-Sun Ko, Yeon-Jin Gil, Kwang-Wook Lee
  • Publication number: 20190096712
    Abstract: Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.
    Type: Application
    Filed: May 14, 2018
    Publication date: March 28, 2019
    Inventors: Sang-Jine PARK, Byung-Kwon CHO, Yong-Jhin CHO, Yong-Sun KO, Yeon-Jin GIL, Kwang-Wook LEE
  • Publication number: 20180358242
    Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.
    Type: Application
    Filed: November 30, 2017
    Publication date: December 13, 2018
    Inventors: Young-hoo Kim, Sang-jine PARK, Yong-jhin CHO, Yeon-jin GIL, Ji-hoon JEONG, Byung-kwon CHO, Yong-sun KO, Kun-tack LEE
  • Patent number: 10128246
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: November 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Jine Park, Bo-Un Yoon, Ha-Young Jeon, Yeon-Jin Gil, Ji-Won Yun, Won-Sang Choi
  • Publication number: 20170271336
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.
    Type: Application
    Filed: June 7, 2017
    Publication date: September 21, 2017
    Inventors: Sang-Jine Park, Bo-Un Yoon, Ha-Young Jeon, Yeon-Jin Gil, Ji-Won Yun, Won-Sang Choi
  • Patent number: 9704864
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.
    Type: Grant
    Filed: June 22, 2015
    Date of Patent: July 11, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-Jine Park, Bo-Un Yoon, Ha-Young Jeon, Yeon-Jin Gil, Ji-Won Yun, Won-Sang Choi
  • Publication number: 20160043170
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.
    Type: Application
    Filed: June 22, 2015
    Publication date: February 11, 2016
    Inventors: Sang-Jine Park, Bo-Un Yoon, Ha-Young Jeon, Yeon-Jin Gil, Ji-Won Yun, Won-Sang Choi