Abstract: Disclosed is a nitride semiconductor light-emitting device, including a substrate, a nitride semiconductor layer including a first conductive layer, an active layer and a second conductive layer located on the substrate, a first electrode formed on the first conductive layer, and a second electrode formed on the second conductive layer, wherein a pattern having one or more protrusions formed at a predetermined interval and concave portions resulting from depression of upper surfaces of the protrusions to a predetermined depth is formed on the surface of the substrate which abuts with the first conductive layer. A method of fabricating the nitride semiconductor light-emitting device is also provided. When the substrate having a pattern with protrusions and concave portions is used, higher light extraction efficiency can be obtained.

Abstract: Disclosed is a nitride semiconductor light-emitting device, including a substrate, a nitride semiconductor layer including a first conductive layer, an active layer and a second conductive layer located on the substrate, a first electrode formed on the first conductive layer, and a second electrode formed on the second conductive layer, wherein a pattern having one or more protrusions formed at a predetermined interval and concave portions resulting from depression of upper surfaces of the protrusions to a predetermined depth is formed on the surface of the substrate which abuts with the first conductive layer. A method of fabricating the nitride semiconductor light-emitting device is also provided. When the substrate having a pattern with protrusions and concave portions is used, higher light extraction efficiency can be obtained.