Abstract: Methods, systems, and devices for techniques for in-situ testing of stacked semiconductor components are described. A semiconductor system may include a semiconductor unit formed by a first component and one or more second components bonded with a second surface of a first component opposite to a first surface of the first component. The first component may include one or more conductors coupled (e.g., electrically, communicatively) with first circuitry, where each of the conductors may have a respective first interface at the first surface and a respective second interface at another surface of the first component. Each of the one or more second components may include respective second circuitry coupled with the first circuitry and may be configured to be operable based on signaling received via at least one of the one or more conductors of the first component.

Abstract: A semiconductor device is provided that can include a substrate and a first and second stack of semiconductor dies coupled to the substrate. The first stack of semiconductor dies and the second stack of semiconductor dies are staggered such that the first stack of semiconductor dies has a first footprint and the second stack of semiconductor dies has a second footprint that partially overlaps the first footprint. The first stack of semiconductor dies and the second stack of semiconductor dies are alternated such that each semiconductor die of the first stack of semiconductor dies is vertically mounted to a respective semiconductor die of the second stack of semiconductor dies. Conductive structures extend between portions of the first and second stacks of semiconductor dies exposed beyond the second footprint and the first footprint, respectively, to electrically couple the semiconductor dies.

Abstract: A semiconductor package includes a package substrate, a plurality of memory stacks, at least one processor chip and one or more heat dissipation structures. The memory stacks are disposed on the package substrate. The memory stacks are spaced apart from each other by a predetermined distance. The processor chip is disposed on the memory stacks to be partially overlapped with each of the memory stacks. The heat dissipation structure is disposed on the upper surfaces of the memory stacks.

Abstract: A semiconductor package includes a package substrate, a plurality of memory stacks, at least one processor chip and one or more heat dissipation structures. The memory stacks are disposed on the package substrate. The memory stacks are spaced apart from each other by a predetermined distance. The processor chip is disposed on the memory stacks to be partially overlapped with each of the memory stacks. The heat dissipation structure is disposed on the to upper surfaces of the memory stacks.

Abstract: A semiconductor package and a method of manufacturing the semiconductor package may be provided. The semiconductor package may include a first semiconductor chip disposed on a first surface of an interconnection layer, a second and a third semiconductor chips disposed on a second surface of the interconnection layer. The semiconductor package may include a thermal transfer plate disposed between the second and third semiconductor chips, contacting the second surface of the interconnection layer, and overlapping with the first semiconductor chip. The thermal transfer plate may be configured to provide a heat radiation path.

Abstract: A semiconductor package and a method of manufacturing the semiconductor package may be provided. The semiconductor package may include a first semiconductor chip disposed on a first surface of an interconnection layer, a second and a third semiconductor chips disposed on a second surface of the interconnection layer. The semiconductor package may include a thermal transfer plate disposed between the second and third semiconductor chips, contacting the second surface of the interconnection layer, and overlapping with the first semiconductor chip. The thermal transfer plate may be configured to provide a heat radiation path.

Abstract: A semiconductor package and or method of fabricating a semiconductor package may be provided. The semiconductor package may include a package substrate. The semiconductor package may include a first semiconductor die coupled to the package substrate by first interconnectors. The semiconductor package may include a second semiconductor die coupled to the first semiconductor die by second interconnectors. The second semiconductor die may be coupled to the substrate.

Abstract: There is provided a structure and a method of manufacturing a semiconductor package. The method includes disposing a first semiconductor device and through mold ball connectors (TMBCs) on a first surface of an interconnection structure layer, recessing a molding layer on the first surface of the interconnection structure layer to expose a portion of each of the TMBCs, attaching outer connectors to the exposed portions of the TMBCs, and mounting a second semiconductor device on a second surface of the interconnection structure layer opposite to the molding layer.

Abstract: There is provided a structure and a method of manufacturing a semiconductor package. The method includes disposing a first semiconductor device and through mold ball connectors (TMBCs) on a first surface of an interconnection structure layer, recessing a molding layer on the first surface of the interconnection structure layer to expose a portion of each of the TMBCs, attaching outer connectors to the exposed portions of the TMBCs, and mounting a second semiconductor device on a second surface of the interconnection structure layer opposite to the molding layer.

Abstract: A semiconductor package and or method of fabricating the semiconductor package may be provided. The semiconductor package may include a first die, at least one second die electrically connected to the first die, and a plurality of first connectors disposed on the interconnection structure layer. The semiconductor package may include a package substrate electrically connected to the plurality of first connectors. The package substrate may have a cavity and the at least one second die is at least partially disposed in the cavity. The interconnection structure layer may include signal paths electrically connected to the first die and to the at least one second die. The at least one second die may be positioned to minimize a length of the signal paths.

Abstract: A high-strength and high-ductility steel sheet having a composition including, by weight, 1.0 to 1.4% C, 5.0 to 9.0% Mn, 2.0 to 8.0% Cr and the balance Fe, and unavoidable impurities. The steel sheet has an austenite structure formed at room temperature, and stacking fault energy is effectively controlled by the addition of Cr and N2. Mechanical twins are formed during the plastic deformation of the steel, thereby leading to high levels of work hardening, tensile strength and workability.

Abstract: A semiconductor device and a manufacturing method thereof are provided. In one embodiment of the manufacturing method of the semiconductor device, a through electrode is formed on a semiconductor die, and a dielectric layer such as a photopolymer is coated on the through electrode to cover the through electrode. Under exposure is performed on the dielectric layer, thereby partially removing the dielectric layer by development. As a result, a top end of the through electrode is exposed to the outside or protrudes through the dielectric layer. The dielectric layer remaining on the top end of the through electrode may be removed by performing a plasma descum process, if needed.

Abstract: A semiconductor device and a manufacturing method thereof are provided. In one embodiment of the manufacturing method of the semiconductor device, a through electrode is formed on a semiconductor die, and a dielectric layer such as a photopolymer is coated on the through electrode to cover the through electrode. Under exposure is performed on the dielectric layer, thereby partially removing the dielectric layer by development. As a result, a top end of the through electrode is exposed to the outside or protrudes through the dielectric layer. The dielectric layer remaining on the top end of the through electrode may be removed by performing a plasma descum process, if needed.

Abstract: Provided is a high manganese nitrogen-containing steel sheet. The high manganese nitrogen-containing steel sheet according to the present invention comprises 0.5 to 1.0 wt % of carbon, 10 to 20 wt % of manganese, 0.02 to 0.3 wt % of nitrogen, with a remainder of Fe and unavoidable impurities. The high manganese nitrogen-containing steel sheet according to the present invention produces an austenite phase at room temperature, in which the stacking fault energy is effectively controlled by adding chrome and nitrogen. Accordingly, the high manganese nitrogen-containing steel sheet of the present invention produces a mechanical twin during the plastic deformation of the steel sheet, thereby increasing the work hardening rate, tensile strength, and workability.