Abstract: A method for fabricating a semiconductor device includes: forming a first oxide layer containing a first element over a first electrode layer; forming a second oxide layer containing a second element over the first oxide layer; forming a stacked structure in which a plurality of first oxide layers and a plurality of second oxide layers are alternately stacked by repeating the forming of the first oxide layer and the forming of the second oxide layer a plurality of times; and forming a second electrode layer over the stacked structure, wherein a thickness of a lowermost first oxide layer among the plurality of first oxide layers is greater than a thickness of each of other first oxide layers.

Abstract: A semiconductor device includes a substrate with a conductive pattern. A semiconductor die is electrically connected to the substrate and both the semiconductor die and the substrate are at least partially covered by a package body. In some examples, through-mold vias are formed in the package body to provide electrical signal paths from an exterior surface thereof to the conductive pattern of the substrate. In some examples, through-mold vias are included in the package body to provide electrical signal paths between the semiconductor die and an exterior surface of the package body. In some examples, an interposer is electrically connected to the through-mold vias and may be covered by the package body and/or disposed in spaced relation thereto. In some examples, the interposer may not be electrically connected to the through-mold vias but may have one or more semiconductor dies of the semiconductor device electrically connected thereto.

Abstract: Disclosed is a bone regeneration device which forms an electric field on a scaffold inserted into a bone damage site. The present bone regeneration device comprises: a battery; a first electric conductor to be connected to a first electrode of the battery and inserted into a bone located on one side of the scaffold; and a second electric conductor to be connected to a second electrode of the battery and inserted into a bone located on the other side of the scaffold, wherein the battery forms an electric field on the scaffold by applying voltage to the first electric conductor and the second electric conductor.

Abstract: Disclosed is a bone regeneration device which forms an electric field on a scaffold inserted into a bone damage site. The present bone regeneration device comprises: a battery; a first electric conductor to be connected to a first electrode of the battery and inserted into a bone located on one side of the scaffold; and a second electric conductor to be connected to a second electrode of the battery and inserted into a bone located on the other side of the scaffold, wherein the battery forms an electric field on the scaffold by applying voltage to the first electric conductor and the second electric conductor.