Patents by Inventor Yeong-Ah Soh

Yeong-Ah Soh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR MANUFACTURING QUANTUM DOTBASED MANETIC RANDOM ACCESS MEMORY ( MRAM)
    Publication number: 20030104637
    Abstract: A magnetic random access memory (MRAM) cell is provided. The magnetic random access memory cell comprises an insulating substrate, an electrically conductive base line provided on the insulating substrate, at least one magnetic quantum dot attached to the base line, and an electrically conductive top line provided across the at least one magnetic quantum dot in a direction transverse to the base line. A junction is thereby formed between the base line and the top line. At least one of the base line and the top line comprise a magnetic material. A method for manufacturing the magnetic random access memory cell is also provided. In addition, an array of magnetic random access memory cells is provided, as well as a method for manufacturing same.
    Type: Application
    Filed: April 10, 2002
    Publication date: June 5, 2003
    Applicant: NEC Research Institute, Inc.
    Inventors: Gabriel Aeppli, David J. Norris, Christophe Renner, Yeong-Ah Soh
  • QUANTUM DOT-BASED MAGNETIC RANDOM ACCESS MEMORY (MRAM) AND METHOD FOR MANUFACTURING SAME
    Publication number: 20030103367
    Abstract: A magnetic random access memory (MRAM) cell is provided. The magnetic random access memory cell comprises an insulating substrate, an electrically conductive base line provided on the insulating substrate, at least one magnetic quantum dot attached to the base line, and an electrically conductive top line provided across the at least one magnetic quantum dot in a direction transverse to the base line. A junction is thereby formed between the base line and the top line. At least one of the base line and the top line comprise a magnetic material. A method for manufacturing the magnetic random access memory cell is also provided. In addition, an array of magnetic random access memory cells is provided, as well as a method for manufacturing same.
    Type: Application
    Filed: November 30, 2001
    Publication date: June 5, 2003
    Applicant: NEC Research Institute, Inc.
    Inventors: Gabriel Aeppli, David J. Norris, Christophe Renner, Yeong-Ah Soh