Abstract: An apparatus for improving linearity of small signal according to the present invention comprises a least of one non-linear signal generating means for receiving a first DC bias larger than a threshold voltage and for generating a non-linear signal; feedback means for returning the non-linear signal from said a least of one non-linear signal generating means; and amplifying means for receiving, amplifying and outputting to an output unit, a second DC bias larger than the threshold voltage and a reversed and feedback non-linear signal such that the non-linear signal is cancelled. The linearizers according to the present invention have a higher linearity and a simple constitution, and thereby being used for various terminals.

Abstract: To form a silicon tip having an undercut, a photoresist pattern having a vertical profile or a positive profile is formed on a silicon substrate and an under-cuted isotropic etching process is then performed using the photoresist pattern as a mask. First and second insulation films are formed on the silicon tip and the silicon substrate except for the silicon tip. The first insulation film is then separated from the second insulation film.

Abstract: A method for manufacturing a semiconductor device having a stacked gate electrode structure of self-aligned polysilicon-metal, which is capable of minimizing the variation in structural and electrical characteristics of the gate electrode, while utilizing the manufacturing process of forming a conventional silicone semiconductor memory device, is disclosed. According to the method for manufacturing a semiconductor device of the present invention, the conventional technique generally used in the manufacturing process of forming the silicon semiconductor device can be effectively utilized. Further, an excessive etch loss in the oxide layer can be restrained by using the oxide spacer of the self-aligned oxide layer in forming the metal layer at the gate electrode structure. Furthermore, it has an advantageous effect that the stable electrical characteristics of the resulting device can be obtained by using the polysilicon layer as a basic constituting material of the gate electrode thereof.

Abstract: In a method, a film for a gate electrode, exposed through the sidewall of a trench, is thermally treated to grow a thermal oxide film which is, then, removed at the lateral side of the gate electrode, to spatially separate the gate electrode from the gate insulating film in space. This method precisely controls the thermal oxide film formed at the lateral side of the gate electrode, so that the distance between the gate electrode and the electron emission cathode can be accurately adjusted. The electron emission cathodes are homogeneous in shape. Also, the reliability of the display can be improved since a silicide metal is formed on the electron emission cathodes.