Patents by Inventor Yeong-Cheol Kim

Yeong-Cheol Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240016837
    Abstract: The present invention relates to a novel T-cell receptor binding to MR1, and a use thereof. Unlike a conventional customized anticancer immune T cell therapeutic agent, which are limitedly used depending on cancer type and the expression of cancer antigens according to human leukocyte antigen (HLA) type, T cells in which a T-cell receptor is expressed can be applied to all types of cancer regardless of HLA type.
    Type: Application
    Filed: June 3, 2021
    Publication date: January 18, 2024
    Inventors: Byoung S. Kwon, Yeong Cheol Kim, Kwanghee Kim, Sunhee Hwang, Jiwon Chung, Jungyun Lee
  • Publication number: 20090137402
    Abstract: The present invention provides for a method for analyzing large genomes using a process by where the genomic DNA is digested by a small base pair restriction enzyme. The fragments are then cloned and a unique ta-vector-tag is created. The tag-vector-tag fragments are purified and re-ligated to create a “ditag” library, which are then sequenced. In the final step, the sequenced ditags can be mapped back to the genome using software containing mapping algorithms and a unique ditag reference database to provide a method for scanning large portions of the genome in a reduced amount of time and cost.
    Type: Application
    Filed: October 11, 2007
    Publication date: May 28, 2009
    Inventors: San Ming Wang, Jun Chen, Yeong Cheol Kim
  • Publication number: 20010025995
    Abstract: A silicide structure having an uniform interface and a forming method thereof which prevents abrupt silicidation to form a silicide layer having a uniform interface by forming a barrier layer which prevents metal for silicidation from diffusing, thereby improving thermal stability by preventing agglomeration. The silicide structure includes a polysilicon layer lying on a semiconductor substrate, a diffusion barrier layer formed on the polysilicon layer, and a semiconductor compound layer including the metal atoms formed on the diffusion barrier layer. In another aspect, the present invention includes forming a first polysilicon layer on a semiconductor substrate, forming a metal atom diffusion barrier layer on the first polysilicon layer, forming a second polysilicon layer on the diffusion barrier layer, forming a metal layer on the second polysilicon layer, and forming a silicon compound layer by reacting the metal layer with the second polysilicon layer.
    Type: Application
    Filed: January 26, 2001
    Publication date: October 4, 2001
    Inventors: Key-Min Lee, Yeong-Cheol Kim