Abstract: Provided is a method for preparing a recycled ABS resin, and the method for preparing a recycled ABS resin includes: preparing an extrusion feed including an acrylonitrile butadiene styrene (ABS) base resin including polyurethane, a metal carboxylic acid salt, and a polyhydric alcohol; and supplying the extrusion feed to an extruder to perform a depolymerization reaction of the polyurethane and extruding the extrusion feed.

Abstract: The present invention relates to an anticancer use of aristoloxazine C, and more specifically to a pharmaceutical composition and a health functional food composition which use aristoloxazine C represented by Chemical Formula 1 or an isomer or pharmaceutically acceptable salt thereof, a method for preventing, ameliorating or treating cancer by using same; and a method for isolating aristoloxazine C.

Abstract: The present invention relates to a novel T-cell receptor binding to MR1, and a use thereof. Unlike a conventional customized anticancer immune T cell therapeutic agent, which are limitedly used depending on cancer type and the expression of cancer antigens according to human leukocyte antigen (HLA) type, T cells in which a T-cell receptor is expressed can be applied to all types of cancer regardless of HLA type.

Abstract: The present invention provides for a method for analyzing large genomes using a process by where the genomic DNA is digested by a small base pair restriction enzyme. The fragments are then cloned and a unique ta-vector-tag is created. The tag-vector-tag fragments are purified and re-ligated to create a “ditag” library, which are then sequenced. In the final step, the sequenced ditags can be mapped back to the genome using software containing mapping algorithms and a unique ditag reference database to provide a method for scanning large portions of the genome in a reduced amount of time and cost.

Abstract: A silicide structure having an uniform interface and a forming method thereof which prevents abrupt silicidation to form a silicide layer having a uniform interface by forming a barrier layer which prevents metal for silicidation from diffusing, thereby improving thermal stability by preventing agglomeration. The silicide structure includes a polysilicon layer lying on a semiconductor substrate, a diffusion barrier layer formed on the polysilicon layer, and a semiconductor compound layer including the metal atoms formed on the diffusion barrier layer. In another aspect, the present invention includes forming a first polysilicon layer on a semiconductor substrate, forming a metal atom diffusion barrier layer on the first polysilicon layer, forming a second polysilicon layer on the diffusion barrier layer, forming a metal layer on the second polysilicon layer, and forming a silicon compound layer by reacting the metal layer with the second polysilicon layer.