Abstract: An LCD including a backlight module and an LCD panel is provided. The LCD panel includes a color light guide panel, suitable for differentiating an incident light into multiple color lights. The color light guide panel includes a substrate and a color light output structure. The substrate has multiple pixel regions, and the color light output structure is disposed in each of the pixel regions. The color light output structure includes first˜fourth nano-patterns. The incident light is scattered by the first nano-pattern for producing a first color light, scattered by the second nano-pattern for producing a second color light, scattered by the third nano-pattern for producing a third color light, and scattered by the fourth nano-pattern for producing a fourth color light. The color light guide panel can output uniform and high luminous first˜fourth color light, and the LCD can display high quality image.

Abstract: An LCD including a backlight module and an LCD panel is provided. The LCD panel includes a color light guide panel, suitable for differentiating an incident light into multiple color lights. The color light guide panel includes a substrate and a color light output structure. The substrate has multiple pixel regions, and the color light output structure is disposed in each of the pixel regions. The color light output structure includes first˜fourth nano-patterns. The incident light is scattered by the first nano-pattern for producing a first color light, scattered by the second nano-pattern for producing a second color light, scattered by the third nano-pattern for producing a third color light, and scattered by the fourth nano-pattern for producing a fourth color light. The color light guide panel can output uniform and high luminous first˜fourth color light, and the LCD can display high quality image.

Abstract: A color light guide panel, suitable for differentiating an incident light into multiple color lights is provided. The color light guide panel includes a substrate and a color light output structure. The substrate has multiple pixel regions, and the color light output structure is disposed in each of the pixel regions. The color light output structure includes a first nano-pattern, a second nano-pattern and a third nano-pattern. The incident light is scattered by the first nano-pattern for producing a first color light, scattered by the second nano-pattern for producing a second color light, and scattered by the third nano-pattern for producing a third color light. The color light guide panel can output uniform and high luminous first, second and third color light. Moreover, a liquid crystal display device having the above color light output structure is also provided.

Abstract: A strain sensor is provided including a substrate, and a sensing layer, including cobalt, provided on the substrate. A first electrode is coupled to the sensing layer, and a tunnel layer including aluminum oxide is provided on the sensing layer. In addition, a pinned layer, also including cobalt, is provided on the tunnel layer. An exchange biasing layer is provided on the pinned layer, and a second electrode is coupled to the exchange biasing layer. The strain sensor is configured such that, over a range of values of strain applied to the sensor, a resistance of the sensor is a linear function of the strain. A related method is also disclosed.

Abstract: A color light guide panel, suitable for differentiating an incident light into multiple color lights is provided. The color light guide panel includes a substrate and a color light output structure. The substrate has multiple pixel regions, and the color light output structure is disposed in each of the pixel regions. The color light output structure includes a first nano-pattern, a second nano-pattern and a third nano-pattern. The incident light is scattered by the first nano-pattern for producing a first color light, scattered by the second nano-pattern for producing a second color light, and scattered by the third nano-pattern for producing a third color light. The color light guide panel can output uniform and high luminous first, second and third color light. Moreover, a liquid crystal display device having the above color light output structure is also provided.

Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

Abstract: A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.

Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

Abstract: A strain sensor is provided including a substrate, and a sensing layer, including cobalt, provided on the substrate. A first electrode is coupled to the sensing layer, and a tunnel layer including aluminum oxide is provided on the sensing layer. In addition, a pinned layer, also including cobalt, is provided on the tunnel layer. An exchange biasing layer is provided on the pinned layer, and a second electrode is coupled to the exchange biasing layer. The strain sensor is configured such that, over a range of values of strain applied to the sensor, a resistance of the sensor is a linear function of the strain. A related method is also disclosed.

Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

Abstract: A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.

Abstract: A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.

Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

Abstract: A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.

Abstract: According to the method for preparation of ultrathin magnetic layer on semiconductor of this invention, a non-ferromagnetic metal buffer layer thinner than 40 ML is formed on the semiconductor substrate on which the magnetic layer is to be prepared. The thickness of the non-ferromagnetic metal buffer layer may be 0.5-9 ML, preferably 1-8 ML, most preferably 1.5-6 ML. Thereafter, the magnetic layer is formed on said non-ferromagnetic metal buffer layer. The thickness of the magnetic layer so prepared may be less than 40 ML, close to the limitation of ultrathin. Material for the non-ferromagnetic metal buffer layer is preferably a metal or metal alloy that is immiscible with the magnetic layer when the magnetic layer is formed on the buffer layer. In the embodiments of the present invention, the non-ferromagnetic metal is silver, while material of the magnetic layer is cobalt. This invention also discloses the magnetic structure so prepared.

Abstract: This specification disclosed a multilayer film structure of a tunneling magneto-resistor and the manufacturing of the same, the structure being able to increase the tunneling magneto-resistance (TMR) ratio and to decrease the difficulty in manufacturing. The multilayer film structure disclosed herein forms, in a three-layer film structure composed of two layers of ferromagnetic films and an insulating layer provided in between, a layer of moderately thick ferromagnetic metal insertion between one of the ferromagnetic film and the insulating layer. Through the insertion the tunneling magneto-resistance ratio can be greatly increased and the thickness of the insulating layer is increased to the range where the manufacturing difficulty is lowered.

Abstract: A method for designing an optimal bi-axial type of magnetic gear system that uses magnetic coupling for transmitting torque in order to be free from the defects caused by using a conventional mechanical gear system. A non-coaxial rather than a conventional coaxial type of magnetic gear design is considered for this invention. For the non-coaxial magnetic gear system, the size of torque will depend on the number of poles magnetized out of the strong magnetic material around the magnetic gear. Therefore, the optimum number of magnetized poles must be carefully selected for a set of specified conditions such that the largest torque can be obtained. An optimal magnetic gear system can be produced by the method in this invention.

Abstract: A new type of stator design and arc shaping method that is used in a diametrically wound and diametrical air gap type of brushless motor. After arc shaping, the stator of this brushless motor has an external profile composed of a central arc and two modified arcs located on each side of the central arc. The central arc subtends an angle twice that of angle A and the modified arcs each has a radius r, both angle A and r are given by the following formulae: ##EQU1## Through arc shaping the stator, the cogging torque is lowered while a certain standard value for the torque constant is still maintained. Thus, the overall efficiency of the brushless motor is raised.