Abstract: A semiconductor device according to an embodiment comprises a substrate, an epitaxial layer on the substrate, and a cluster including a plurality of particles disposed on the epitaxial layer, the particles being disposed to be apart from each other, and contacting the epitaxial layer.

Abstract: A semiconductor device according to an embodiment comprises a substrate, an epitaxial layer on the substrate, and a cluster including a plurality of particles disposed on the epitaxial layer, the particles being disposed to be apart from each other, and contacting the epitaxial layer.

Abstract: A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate.

Abstract: A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide.

Abstract: A deposition apparatus according to the embodiment includes a gas supply part for supplying a first gas; an ionization part connected to the gas supply part to supply a second gas, which is obtained by ionizing the first gas; and a reaction part into which the second gas is introduced to create a reaction. A deposition method according to the embodiment includes the steps of preparing a first gas; supplying a second gas, which is obtained by ionizing the first gas; and reacting the second gas with a substrate.

Abstract: A deposition apparatus and a method of forming a thin film are provided. The deposition apparatus includes a reaction gas supply unit supplying a reaction gas, a buffer unit temporarily storing the reaction gas supplied from the reaction gas supply unit, and a deposition unit forming a thin film by using the reaction gas supplied from the buffer unit.

Abstract: A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate.

Abstract: A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide.