Abstract: Disclosed herein is a separate chamber type epi-growth apparatus including a reaction chamber having a growth space, a substrate mounting unit disposed in the growth space and allowing a substrate to be mounted thereon, a metal oxide treating unit treating a metal oxide in a space independent from the growth space so that metal ions and oxygen ions generated from the metal oxide are supplied to the substrate, an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, an oxygen radical supply unit installed to face the substrate, dissociating oxygen molecules in a gaseous state, and supplying oxygen radicals to the substrate, and a vacuum control unit independently controlling a vacuum state of the reaction chamber and the metal oxide treating unit.

Abstract: A metal-oxide electron-beam evaporation source including a variable temperature control device according to the present invention includes: a crucible configured to store a deposition material which is formed of a metal oxide and over which an electron beam is directly scanned; N heating units provided in an outer portion of the crucible, dividing the crucible into N regions, and provided for N regions, respectively; and a control unit configured to control the N heating units so that a temperature of an upper region of the crucible is maintained to be higher than that of a lower region of the crucible to reduce a temperature difference between a region over which the electron beam is scanned and a region over which the electron beam is not scanned.

Abstract: Disclosed herein is an apparatus for growing a single crystal metal-oxide epi wafer, including a reaction chamber having an internal space, a substrate mounting unit disposed in the internal space and allowing a substrate to be mounted thereon, a metal-oxide treating unit treating a metal-oxide to supply metal ions and oxygen ions generated from the metal-oxide to the substrate, and an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, wherein the metal-oxide treating unit includes a mount disposed to face the substrate in the internal space and allowing a zinc oxide plate which is the metal-oxide to be installed thereon, and an electron beam irradiator irradiating the zinc oxide plate with an electron beam in a direct manner to cause zinc ions and oxygen ions evaporated from the zinc oxide plate to move toward the substrate.

Abstract: Disclosed herein is a separate chamber type epi-growth apparatus including a reaction chamber having a growth space, a substrate mounting unit disposed in the growth space and allowing a substrate to be mounted thereon, a metal oxide treating unit treating a metal oxide in a space independent from the growth space so that metal ions and oxygen ions generated from the metal oxide are supplied to the substrate, an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, an oxygen radical supply unit installed to face the substrate, dissociating oxygen molecules in a gaseous state, and supplying oxygen radicals to the substrate, and a vacuum control unit independently controlling a vacuum state of the reaction chamber and the metal oxide treating unit.

Abstract: Disclosed herein is an apparatus for growing a single crystal metal-oxide epi wafer, including a reaction chamber having an internal space, a substrate mounting unit disposed in the internal space and allowing a substrate to be mounted thereon, a metal-oxide treating unit treating a metal-oxide to supply metal ions and oxygen ions generated from the metal-oxide to the substrate, and an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, wherein the metal-oxide treating unit includes a mount disposed to face the substrate in the internal space and allowing a zinc oxide plate which is the metal-oxide to be installed thereon, and an electron beam irradiator irradiating the zinc oxide plate with an electron beam in a direct manner to cause zinc ions and oxygen ions evaporated from the zinc oxide plate to move toward the substrate.

Abstract: A metal-oxide electron-beam evaporation source including a variable temperature control device according to the present invention includes: a crucible configured to store a deposition material which is formed of a metal oxide and over which an electron beam is directly scanned; N heating units provided in an outer portion of the crucible, dividing the crucible into N regions, and provided for N regions, respectively; and a control unit configured to control the N heating units so that a temperature of an upper region of the crucible is maintained to be higher than that of a lower region of the crucible to reduce a temperature difference between a region over which the electron beam is scanned and a region over which the electron beam is not scanned.