Patents by Inventor Yeong-Hwan Cho
Yeong-Hwan Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240125365Abstract: A pad liner includes a first pad clip that surrounds and is coupled to a side protrusion protruding in a lateral direction from a brake pad, and a torque support located under the first pad clip and between a side surface of the brake pad and the caliper body. The torque support supports a braking torque. The first pad clip includes a reference surface located on one of a top surface and a bottom surface of the side protrusion, a vertical elastic portion located on an opposite side from the reference surface that pressurizes the side protrusion in a direction of the reference surface, and a clip side portion that connects the reference surface and the vertical elastic portion and surrounds a side surface of the side protrusion. The pad liner minimizes a vertical gap and movement of the brake pad.Type: ApplicationFiled: October 16, 2023Publication date: April 18, 2024Applicant: HYUNDAI MOBIS CO., LTD.Inventors: Kang Kuk LEE, Seong Hwan AHN, Wan Kyu LEE, In Ho LEE, Yeong Bin CHO
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Publication number: 20240128554Abstract: A button type secondary battery includes a wound electrode assembly; a lower can with the electrode assembly and an electrolyte in the lower can; a top plate to close the lower can; a positive electrode terminal coupled to the top plate through a gasket to be electrically insulated from the top plate with a portion of the positive electrode terminal passing through a hole in the top plate to be bonded to a positive electrode tab; a top insulator covering a top surface of the electrode assembly; and a bottom insulator covering a bottom surface of the electrode assembly. The top insulator and the bottom insulator are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one or more of the top insulator and the bottom insulator are coated with a protective layer configured to prevent thermal shrinkage from occurring.Type: ApplicationFiled: October 14, 2022Publication date: April 18, 2024Applicant: LG ENERGY SOLUTION, LTD.Inventors: Yeong Hun JUNG, Young Ji TAE, Joo Hwan SUNG, Min Su CHO, Geun Young PARK, Min Gyu KIM, Min Seon KIM, Sang Hak CHAE, Min Young JU
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Publication number: 20240067668Abstract: The present invention relates to a heteroaryl derivative compound and a use thereof. Since the heteroaryl derivative of the present invention exhibits excellent inhibitory activity against EGFR, the heteroaryl derivative can be usefully used as a therapeutic agent for EGFR-associated diseases.Type: ApplicationFiled: December 29, 2021Publication date: February 29, 2024Inventors: Yi Kyung Ko, Ah Reum Han, Jin Hee Park, Yeong Deok Lee, Hye Rim Im, Kyun Eun Kim, Dong Keun Hwang, Su Been Nam, Myung Hoe Heo, Se Rin Cho, Eun Hwa Ko, Sung Hwan Kim, Hwan Geun Choi
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Patent number: 7291860Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: GrantFiled: November 4, 2003Date of Patent: November 6, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee
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Publication number: 20040090566Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: ApplicationFiled: November 4, 2003Publication date: May 13, 2004Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee
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Patent number: 6657231Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: GrantFiled: June 17, 2002Date of Patent: December 2, 2003Assignee: Samsung Electronics Co., Ltd.Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee
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Publication number: 20030107039Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: ApplicationFiled: May 7, 2002Publication date: June 12, 2003Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee
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Publication number: 20020149020Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: ApplicationFiled: June 17, 2002Publication date: October 17, 2002Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee
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Patent number: 6441401Abstract: A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line.Type: GrantFiled: March 17, 2000Date of Patent: August 27, 2002Assignee: Samsung Electronics Co., Ltd.Inventors: Cheol-Soo Jung, Young-Sun Kim, Ho-Joon Lee, Yeong-Hwan Cho, Hyeon-Hwan Kim, Bung-Hyuk Min, Woon-Yong Park, Il-Gon Kim, Jang-Soo Kim, Jin-Oh Kwag, Seog-Chae Lee