Abstract: The present disclosure provides a smoking article filter including lyocell tow including a plurality of lyocell fibers, a phenolic functional material, and a binder and a method of producing the smoking article filter and provides a smoking article including the smoking article filter.

Abstract: Provided is a display device including a display panel, an optical sensor, a timing controller, a scan driver, a data driver, and an image controller. The timing controller controls an image refresh rate of the display panel based on are fresh rate control signal. Thus, the display device provides improved visibility.

Abstract: An eco-friendly quarantine composition has a function of killing phospholipid enveloped viruses, The eco-friendly quarantine composition includes: 10 to 40 wt. % of polyoxyethylene lauryl ether, 0.01 to 10 wt. % of polyoxyethylene 2-ethylhexyl ether, 0.01 to 10 wt. % of polyoxyethylene polyoxypropylene alkyl ether, and a balance of solvent, based on the total 100 wt. % of the composition. The eco-friendly quarantine composition may have 100% of SARS-CoV-2 virus removal rate in 1 minute and an effect of killing 100% of highly pathogenic avian influenza virus in 1 to 10 minutes. The composition has low cytotoxicity such that IC50 value (%) for human epithelial keratinocyte cells (HaCaT), human bronchial epithelial cells (BEAS-2B), and human monocyte cells (THP-1) is in a range of 0.003 to 0.0045, and effects of having antibacterial activity against non-pathogenic strains, and pathogenic strains.

Abstract: A substrate processing apparatus is provided and includes: a support unit including a spin chuck and a centering jig that is on the spin chuck, the spin chuck configured to support and rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a swing arm including a correction unit that includes a sensor and an emitter, the swing arm configured to move such that the correction unit moves to a target point on the substrate, and the emitter configured to irradiate a beam towards the substrate; and a controller configured to: control the spin chuck and the swing arm; and determine whether a movement trajectory of the swing arm is aligned with a rotation center of the spin chuck based on information acquired by the sensor about the centering jig.

Abstract: Provided is a control device and a substrate processing apparatus including the same. The substrate processing apparatus includes a support unit configured to support and rotate a first substrate, the support unit including a spin chuck, a spray unit configured to spray a processing fluid on the first substrate, a correction unit on a swing arm and configured to irradiate a beam onto the first substrate when the processing fluid is provided on the first substrate, wherein the swing arm is adjacent to the spin chuck and is configured to move the correction unit to a target point on the first substrate, and a controller configured to control the spin chuck and the swing arm, and correct a position error of the swing arm using a second substrate, wherein a plurality of anchor patterns are on the second substrate.

Abstract: Through a transesterification reaction in which a predetermined amount of bis(2-hydroxyethyl)terephthalate relative to glycol is fed in a divided or continuous manner, bis(glycol)terephthalate with a low residual amount of an ethylene glycol derivative is prepared, and polyester engineering products or biodegradable polyester products with high crystallinity can be produced therefrom.

Abstract: A control device and a substrate processing apparatus including the same are provided. The substrate processing apparatus includes: a support unit including a spin head and configured to support and to rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a correction unit in a swing arm, the correction unit configured to move to a target point on the substrate and to irradiate a beam when the processing liquid is sprayed onto the substrate; and a control unit configured to calculate the target point, wherein the control unit is configured to convert image coordinates associated with a first coordinate system and then to calculate the target point by converting the image coordinates associated with the first coordinate system into image coordinates associated with a second coordinate system, and the second coordinate system is based on rotation angles of the spin head and the swing arm.

Abstract: A recycled bis(4-hydroxybutyl)terephthalate according to an embodiment has a low residual amount of ethylene glycol derivatives, and thus, can be used as a polymerization raw material for high-crystallinity engineering polyester products or biodegradable polyester. Further the recycled bis(4-hydroxybutyl)terephthalate is easily crushed to produce flakes or powder, and provides excellent quality of, for example, colorand provides excellent quality of, for example, color.

Abstract: The present invention provides a hot stamping component having a tensile strength of 1350 Mpa or greater, including a microstructure including prior austenite grains (PAG), wherein an average particle diameter of the PAGs is 35 ?m or less.

Abstract: A method for providing contents includes receiving a selection request for specific contents, from an electronic device; and providing, to the electronic device, an episode list of a plurality of episodes which constitute the specific contents, based on the selection request for the specific contents.

Abstract: A method for analyzing an ultrasound image in the first trimester of pregnancy includes: acquiring an ultrasound image in the first trimester of pregnancy; and acquiring at least one of characteristics of uterus, fetus, placenta, gestational sac, and egg yolk related to the acquired ultrasound image, and determining a group pertinent to the acquired ultrasound image among a plurality of predesignated groups based on the acquired characteristic and the acquired ultrasound image, using an ultrasound image analysis device that has learned in a machine learning technique.

Abstract: A method for providing contents includes receiving a selection request for specific contents, from an electronic device; and providing, to the electronic device, an episode list of a plurality of episodes which constitute the specific contents, based on the selection request for the specific contents.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: A semiconductor device includes a stack structure including alternately stacked interlayer insulating layers and electrode patterns. The semiconductor device also includes a plurality of contact plugs connected to the electrode patterns. The semiconductor device further includes a supporting structure penetrating the stack structure between two adjacent contact plugs of the plurality of contact plugs, wherein the supporting structure has a cross section extending in a zigzag shape.

Abstract: Provided is an aliphatic polycarbonate macropolyol including —OAO— and Z(O—)a as repeating units. In the aliphatic polycarbonate macropolyol, the repeating units —OAO— and Z(O—)a are linked to each other via carbonyl (—C(O)—) linkers or are bonded to hydrogen to form terminal —OH groups. The number of moles of the terminal —OH groups is from aZ to aZ+0.2Z (where Z represents the number of moles of the repeating unit Z(O—)a). Further provided is an aliphatic polycarbonate-co-aromatic polyester macropolyol including —OAO— and Z(O—)a as repeating units. In the aliphatic polycarbonate-co-aromatic polyester macropolyol, the repeating units —OAO— and Z(O—)a are linked via carbonyl (—C(O)—) and —C(O)YC(O)— as linkers or are bonded to hydrogen to form terminal —OH groups.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: A semiconductor device includes a stack structure including alternately stacked interlayer insulating layers and electrode patterns. The semiconductor device also includes a plurality of contact plugs connected to the electrode patterns. The semiconductor device further includes a supporting structure penetrating the stack structure between two adjacent contact plugs of the plurality of contact plugs, wherein the supporting structure has a cross section extending in a zigzag shape.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.