Abstract: A control device and a substrate processing apparatus including the same are provided. The substrate processing apparatus includes: a support unit including a spin head and configured to support and to rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a correction unit in a swing arm, the correction unit configured to move to a target point on the substrate and to irradiate a beam when the processing liquid is sprayed onto the substrate; and a control unit configured to calculate the target point, wherein the control unit is configured to convert image coordinates associated with a first coordinate system and then to calculate the target point by converting the image coordinates associated with the first coordinate system into image coordinates associated with a second coordinate system, and the second coordinate system is based on rotation angles of the spin head and the swing arm.

Abstract: Through a transesterification reaction in which a predetermined amount of bis(2-hydroxyethyl)terephthalate relative to glycol is fed in a divided or continuous manner, bis(glycol)terephthalate with a low residual amount of an ethylene glycol derivative is prepared, and polyester engineering products or biodegradable polyester products with high crystallinity can be produced therefrom.

Abstract: A recycled bis(4-hydroxybutyl)terephthalate according to an embodiment has a low residual amount of ethylene glycol derivatives, and thus, can be used as a polymerization raw material for high-crystallinity engineering polyester products or biodegradable polyester. Further the recycled bis(4-hydroxybutyl)terephthalate is easily crushed to produce flakes or powder, and provides excellent quality of, for example, colorand provides excellent quality of, for example, color.

Abstract: The present invention provides a hot stamping component having a tensile strength of 1350 Mpa or greater, including a microstructure including prior austenite grains (PAG), wherein an average particle diameter of the PAGs is 35 ?m or less.

Abstract: A method for providing contents includes receiving a selection request for specific contents, from an electronic device; and providing, to the electronic device, an episode list of a plurality of episodes which constitute the specific contents, based on the selection request for the specific contents.

Abstract: A method for analyzing an ultrasound image in the first trimester of pregnancy includes: acquiring an ultrasound image in the first trimester of pregnancy; and acquiring at least one of characteristics of uterus, fetus, placenta, gestational sac, and egg yolk related to the acquired ultrasound image, and determining a group pertinent to the acquired ultrasound image among a plurality of predesignated groups based on the acquired characteristic and the acquired ultrasound image, using an ultrasound image analysis device that has learned in a machine learning technique.

Abstract: A method for providing contents includes receiving a selection request for specific contents, from an electronic device; and providing, to the electronic device, an episode list of a plurality of episodes which constitute the specific contents, based on the selection request for the specific contents.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: A semiconductor device includes a stack structure including alternately stacked interlayer insulating layers and electrode patterns. The semiconductor device also includes a plurality of contact plugs connected to the electrode patterns. The semiconductor device further includes a supporting structure penetrating the stack structure between two adjacent contact plugs of the plurality of contact plugs, wherein the supporting structure has a cross section extending in a zigzag shape.

Abstract: Provided is an aliphatic polycarbonate macropolyol including —OAO— and Z(O—)a as repeating units. In the aliphatic polycarbonate macropolyol, the repeating units —OAO— and Z(O—)a are linked to each other via carbonyl (—C(O)—) linkers or are bonded to hydrogen to form terminal —OH groups. The number of moles of the terminal —OH groups is from aZ to aZ+0.2Z (where Z represents the number of moles of the repeating unit Z(O—)a). Further provided is an aliphatic polycarbonate-co-aromatic polyester macropolyol including —OAO— and Z(O—)a as repeating units. In the aliphatic polycarbonate-co-aromatic polyester macropolyol, the repeating units —OAO— and Z(O—)a are linked via carbonyl (—C(O)—) and —C(O)YC(O)— as linkers or are bonded to hydrogen to form terminal —OH groups.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: A semiconductor device includes a stack structure including alternately stacked interlayer insulating layers and electrode patterns. The semiconductor device also includes a plurality of contact plugs connected to the electrode patterns. The semiconductor device further includes a supporting structure penetrating the stack structure between two adjacent contact plugs of the plurality of contact plugs, wherein the supporting structure has a cross section extending in a zigzag shape.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: The present invention relates to a novel group 4 transition metal compound, a method for preparing the compound, a catalyst composition containing the compound, and a method for preparing a polyolefin, comprising a step for forming a polymerization reaction of olefin monomers in the presence of the catalyst composition. The group 4 transition metal compound of the present invention exhibits an excellent catalytic activity and has excellent thermal stability in a polyolefin synthesis reaction, and thus can be used even in a polyolefin synthesis reaction at a high temperature. In addition, the compound of the present invention can be advantageously used in the synthesis process of grade-controlled polyolefin since the weight average molecular weight of the synthesized polyolefin and the octane content in the polymer can be adjusted by varying the kinds of center metal and ligand.

Abstract: Provided is an aliphatic polycarbonate macropolyol including —OAO— and Z(O—)a as repeating units. In the aliphatic polycarbonate macropolyol, the repeating units —OAO— and Z(O—)a are linked to each other via carbonyl (—C(O)—) linkers or are bonded to hydrogen to form terminal —OH groups. The number of moles of the terminal —OH groups is from aZ to aZ+0.2 Z (where Z represents the number of moles of the repeating unit Z(O—)a). Further provided is an aliphatic polycarbonate-co-aromatic polyester macropolyol including —OAO— and Z(O—)a as repeating units. In the aliphatic polycarbonate-co-aromatic polyester macropolyol, the repeating units —OAO— and Z(O—)a are linked via carbonyl (—C(O)—) and —C(O)YC(O)— as linkers or are bonded to hydrogen to form terminal —OH groups.

Abstract: Provided is an aliphatic polycarbonate macropolyol including —OAO— and Z(O—)a as repeating units. In the aliphatic polycarbonate macropolyol, the repeating units —OAO— and Z(O—)a are linked to each other via carbonyl (—C(O)—) linkers or are bonded to hydrogen to form terminal —OH groups. The number of moles of the terminal —OH groups is from aZ to aZ+0.2Z (where Z represents the number of moles of the repeating unit Z(O—)a). Further provided is an aliphatic polycarbonate-co-aromatic polyester macropolyol including —OAO— and Z(O—)a as repeating units. In the aliphatic polycarbonate-co-aromatic polyester macropolyol, the repeating units —OAO— and Z(O—)a are linked via carbonyl (—C(O)—) and —C(O)YC(O)— as linkers or are bonded to hydrogen to form terminal —OH groups.

Abstract: Provided is an aliphatic polycarbonate-co-aromatic polyester with long-chain branches. The copolymer includes repeating units represented by —OAO— and Z(O—)a, which are linked via carbonyl (—C(O)—) and —C(O)YC(O)— as linkers. Also provided is an aliphatic copolycarbonate including repeating units represented by —OAO— and Z(O—)a, which are linked via carbonyl (—C(O)—) linkers. The aliphatic copolycarbonate has a weight average molecular weight of 30,000 or more.

Abstract: The present invention relates to a novel group 4 transition metal compound, a method for preparing the compound, a catalyst composition containing the compound, and a method for preparing a polyolefin, comprising a step for forming a polymerization reaction of olefin monomers in the presence of the catalyst composition. The group 4 transition metal compound of the present invention exhibits an excellent catalytic activity and has excellent thermal stability in a polyolefin synthesis reaction, and thus can be used even in a polyolefin synthesis reaction at a high temperature. In addition, the compound of the present invention can be advantageously used in the synthesis process of grade-controlled polyolefin since the weight average molecular weight of the synthesized polyolefin and the octane content in the polymer can be adjusted by varying the kinds of center metal and ligand.