Abstract: A pouch cell manufacturing method of the present disclosure prevents the sealing quality of a pouch from being deteriorated by an electrolyte solution, by reducing the amount of the electrolyte solution staining the sealing portion in the pouch, and a pouch cell in which gas inside the pouch can be efficiently discharged to the outside of the pouch is provided. The pouch cell of the present disclosure includes: an electrode assembly; a pouch within which the electrode assembly is accommodated; and a gas discharge pipe that is disposed such that the gas discharge pipe extends from the inside of the pouch to the outside, in which gas inside the pouch can be transmitted through the gas discharge pipe and discharged to the outside of the pouch.

Abstract: Disclosed herein is a biodegradable polyolefin fiber comprising a core formed of polyolefin and an oxide layer formed outside the core according to an embodiment of the present invention. According to the present invention, the polyolefin fiber is capable of having biodegradable properties by mixing raw materials and the biodegradable additive in a specific condition. In addition, the oxide layer is formed on the surface of the polyolefin fiber, thereby improving the initial oxo-biodegradation rate and reducing the biodegradation time.

Abstract: The present invention relates to a weld bead inspection device that inspects welding quality by measuring the state of beads formed at a welding part of a metallic or non-metallic pipe, or the like, and more specifically, to a weld bead inspection device that more efficiently inspects a welding part joined by a method such as thermal fusion for connection between pipes or connection between a pipe and a fitting. The weld bead inspection device includes a housing unit that forms an appearance; an imaging unit that images shapes of the weld beads in an inner space that is open downward from a middle inner side of the housing unit; a control unit that is provided in the housing unit to store image data captured by the imaging unit or to calculate external shapes of the weld beads for determining welding quality on the basis of the image data.

Abstract: Disclosed is a vehicle seat adjustment device including a seat-cushion-tilting frame disposed on a moving rail, the moving rail being coupled to a fixed rail so as to be movable forwards and backwards, and connected to a seatback frame, a tilting device hingedly coupled to a base bracket on the moving rail and to a rear end of the seat-cushion-tilting frame to perform forward tilting of the seat-cushion-tilting frame, a locking device connected to the tilting device to lock and unlock the tilting device, and a probe rotatably disposed between the seatback frame and the tilting device, the probe including a stopper capable of being inserted into a locking groove formed in the seatback frame. Rotation of the probe is restricted when the stopper is inserted into the locking groove.

Abstract: A sauce spreading apparatus according to the present invention includes: a stirring part including a stirring module provided to, by rotating, stir a semi-finished product together with an input seasoning so as to produce a product; an input part provided to move the semi-finished product forward so as to deliver same to the stirring module; and a discharge part provided to move forward the product discharged from the stirring part, so as to provide same to a workbench.

Abstract: In a method for estimating nanoparticles in a solution, a laser-induced plasma is generated by making a pulsed laser beam incident on inside a cell containing a solution, feedback signals is acquired based on light, shock wave and sound generated by the laser-induced plasma, the feedback signals, an intensity of the laser incident on the cell, and intensities of each laser passing through the cell for each laser pulse are acquired, the feedback signals acquired for each laser pulse, the intensity of the laser, and the intensities of the lasers passing through the cell into a pre-trained nanoparticle estimation model is input to estimate sizes or types of unknown nanoparticles included in the solution.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Disclosed is a method of manufacturing a blank for hot stamping, which includes forming a plated layer on a steel plate by immersing the steel plate in a plating bath including aluminum and silicon; and heating the steel plate on which the plated layer is formed at a first temperature for a first time period.

Abstract: The present invention provides a hot stamping component having a tensile strength of 1350 Mpa or greater, including a microstructure including prior austenite grains (PAG), wherein an average particle diameter of the PAGs is 35 ?m or less.

Abstract: A method for providing contents includes receiving a selection request for specific contents, from an electronic device; and providing, to the electronic device, an episode list of a plurality of episodes which constitute the specific contents, based on the selection request for the specific contents.

Abstract: A method for analyzing an ultrasound image in the first trimester of pregnancy includes: acquiring an ultrasound image in the first trimester of pregnancy; and acquiring at least one of characteristics of uterus, fetus, placenta, gestational sac, and egg yolk related to the acquired ultrasound image, and determining a group pertinent to the acquired ultrasound image among a plurality of predesignated groups based on the acquired characteristic and the acquired ultrasound image, using an ultrasound image analysis device that has learned in a machine learning technique.

Abstract: A method for providing contents includes receiving a selection request for specific contents, from an electronic device; and providing, to the electronic device, an episode list of a plurality of episodes which constitute the specific contents, based on the selection request for the specific contents.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: A semiconductor device includes a stack structure including alternately stacked interlayer insulating layers and electrode patterns. The semiconductor device also includes a plurality of contact plugs connected to the electrode patterns. The semiconductor device further includes a supporting structure penetrating the stack structure between two adjacent contact plugs of the plurality of contact plugs, wherein the supporting structure has a cross section extending in a zigzag shape.

Abstract: Provided is an aliphatic polycarbonate macropolyol including —OAO— and Z(O—)a as repeating units. In the aliphatic polycarbonate macropolyol, the repeating units —OAO— and Z(O—)a are linked to each other via carbonyl (—C(O)—) linkers or are bonded to hydrogen to form terminal —OH groups. The number of moles of the terminal —OH groups is from aZ to aZ+0.2Z (where Z represents the number of moles of the repeating unit Z(O—)a). Further provided is an aliphatic polycarbonate-co-aromatic polyester macropolyol including —OAO— and Z(O—)a as repeating units. In the aliphatic polycarbonate-co-aromatic polyester macropolyol, the repeating units —OAO— and Z(O—)a are linked via carbonyl (—C(O)—) and —C(O)YC(O)— as linkers or are bonded to hydrogen to form terminal —OH groups.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: A semiconductor device includes a stack structure including alternately stacked interlayer insulating layers and electrode patterns. The semiconductor device also includes a plurality of contact plugs connected to the electrode patterns. The semiconductor device further includes a supporting structure penetrating the stack structure between two adjacent contact plugs of the plurality of contact plugs, wherein the supporting structure has a cross section extending in a zigzag shape.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.