Abstract: Provided is a matable electrical connection structure including a female connection member and a male connection member respectively including a plurality of first connection portions and a plurality of second connection portions, and a plurality of matable connection portions configured to detachably couple the female connection member and the male connection member, and respectively and electrically connect the plurality of first connection portions to the plurality of second connection portions, and the matable connection portions include inner conductive materials respectively and electrically connected to the plurality of first connection portions and provided on inner walls of a plurality of insertion holes formed in the female connection member, columns respectively and electrically connected to the plurality of second connection portions and configured to protrude from the male connection member to be inserted into the insertion hole, and elastic fins configured to extend outside the column to elastic

Abstract: Provided is a method of manufacturing an electrical connection structure which includes a female connection structure having an inner conductive material inside an insertion hole of a female connection member, and a male connection structure having a conductive column configured to be inserted into and fixed to the insertion hole to be in contact with the inner conductive material, and formed to protrude from a male connection member. The method includes preparing insulating members used for the female connection member and the male connection member, and forming the inner conductive material and the column by patterning a conductive material on each of the insulating member using a photolithography process.

Abstract: A semiconductor device and a method for manufacturing the same improves performance of an inductor, wherein a PGS pattern formed in a spiral shape, like inductors, blocks electric current induced to a semiconductor substrate, removes effects of parasitic capacitance thereon and thereby improves performance of the inductor. In accordance with the method, the PGS pattern is formed in a spiral shape, like the inductor, to inhibit flow of induced current. As a result, flow of current induced to the semiconductor substrate, one of resistant conductors, can be blocked. In addition, the PGS pattern acts between the inductor and the semiconductor substrate, thus preventing current leakage to the semiconductor substrate.