Patents by Inventor Yeong-Lin Lai

Yeong-Lin Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10977545
    Abstract: A radio frequency screw antenna includes a metal radiation body and a coupling loop circuit. The metal radiation body includes a shank having a radial direction, a head connected to the shank, and a groove positioned at the head. A length direction of the groove is parallel to the radial direction. The coupling loop circuit is disposed at a first side wall of the groove.
    Type: Grant
    Filed: November 29, 2019
    Date of Patent: April 13, 2021
    Assignee: NATIONAL CHANGHUA UNIVERSITY OF EDUCATION
    Inventors: Yeong-Lin Lai, Li-Chih Chang
  • Publication number: 20200175348
    Abstract: A radio frequency screw antenna includes a metal radiation body and a coupling loop circuit. The metal radiation body includes a shank having a radial direction, a head connected to the shank, and a groove positioned at the head. A length direction of the groove is parallel to the radial direction. The coupling loop circuit is disposed at a first side wall of the groove.
    Type: Application
    Filed: November 29, 2019
    Publication date: June 4, 2020
    Inventors: Yeong-Lin LAI, Li-Chih CHANG
  • Patent number: 10249778
    Abstract: A solar cell structure for wireless charging includes a substrate and at least one thin film solar cell disposed on a surface of the substrate, wherein the thin film solar cell has a winding coil structure. Accordingly, in the thin film solar cell, the electrode which is the winding coil structure may be used as electromagnetic induction coil or millimeter-wave radio wave receiving radiator.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: April 2, 2019
    Assignee: Industrial Technology Research Institute
    Inventors: Hung-Ru Hsu, Li-Chih Chang, Tung-Po Hsieh, Yeong-Lin Lai, Ang-Lun Lee
  • Publication number: 20170162735
    Abstract: A solar cell structure for wireless charging includes a substrate and at least one thin film solar cell disposed on a surface of the substrate, wherein the thin film solar cell has a winding coil structure. Accordingly, in the thin film solar cell, the electrode which is the winding coil structure may be used as electromagnetic induction coil or millimeter-wave radio wave receiving radiator.
    Type: Application
    Filed: December 30, 2015
    Publication date: June 8, 2017
    Inventors: Hung-Ru Hsu, Li-Chih Chang, Tung-Po Hsieh, Yeong-Lin Lai, Ang-Lun Lee
  • Publication number: 20060158286
    Abstract: A defected ground structure for coplanar waveguides comprises two ground planes and one wire positioning between two ground planes. A gap is between each ground plane and the wire, respectively. Each ground plane is symmetrical to the other, and has at least one defected structure. More, each defected structure includes at least two parallel guide channels. One of the guide channels is connected with the gap. Further, each guide channel is connected with other through a connection channel. The defected structure for coplanar waveguides itself has a resonant characteristic. More, it forms a parallel equivalent circuit with multiple capacitors and inductors. In the same impedance, the present invention can efficiently reduce the area of the defected structure. Further, it can obtain a passband-stopband characteristic, a leaky-wave characteristic, and a slow-wave characteristic.
    Type: Application
    Filed: January 17, 2006
    Publication date: July 20, 2006
    Inventors: Yeong-Lin Lai, Chih-Hong Chang
  • Publication number: 20030158689
    Abstract: The purpose of the present invention is to provide a method to extract the extrinsic capacitances of FETs by a physically-meaningful capacitive transmission line model and a linear regression technique. The method of the present invention includes method includes steps of (a) applying a gate-to-source voltage to pinch-off said FETs and setting a drain-to-source voltage to be zero for forming pinched-off cold FETs, (b) measuring S-parameters of said pinched-off cold FETs, (c) representing an intrinsic depletion region of said pinched-off cold FETs by a distributed capacitive transmission line model having a distributed series capacitance Cs and a distributed parallel capacitance Cp; and (d) executing an analytical procedure according to said measured S-parameters for obtaining Y-parameters.
    Type: Application
    Filed: November 20, 2002
    Publication date: August 21, 2003
    Inventors: Yeong-Lin Lai, Cheng-Tsung Chen
  • Patent number: 5766967
    Abstract: A method for fabricating submicron T-shaped gates for the field-effect transistors disclosed, which can be accomplished by using a tri-layer positive photoresist with a single electron beam exposure and a single development step. Therefore, the cost can be reduced and the yield can be raised for fabricating high speed field-effect transistors.
    Type: Grant
    Filed: October 7, 1996
    Date of Patent: June 16, 1998
    Assignee: Industrial Technology Research Institute
    Inventors: Yeong-Lin Lai, Hung-Ping D. Yang, Chun-Yen Chang, Edward Y. Chang, Kazumitsu Nakamura, Rico Chang