Abstract: In an exemplary method of inspecting a stack chip package, a first chip is prepared. The first chip includes a through-silicon via, first pad electrodes connected to the through-silicon via and probe pad electrodes connected to the through-silicon via. A testing chip is prepared. The testing chip includes second pad electrodes that are arranged to correspond with the first pad electrodes. The testing chip is temporarily adhered to the first chip such that the second pad electrodes are electrically connected to the first pad electrode respectively, to form a stack structure wherein the probe pad electrodes are exposed to for testing. An electrical signal is applied to the exposed probe pad electrodes to test the through-silicon via included in the first chip.

Abstract: A semiconductor device includes a substrate having a via region and a circuit region, an insulation interlayer formed on a top surface of the substrate, a through electrode having a first surface and a second surface, wherein the through electrode penetrates the via region of the substrate and the second surface is substantially coplanar with a bottom surface of the substrate, a first upper wiring formed on a portion of the first surface of the through electrode, a plurality of via contacts formed on a portion of a top surface of the first upper wiring, and a second upper wiring formed on the plurality of via contacts.

Abstract: A semiconductor device may include a substrate and a through electrode. The substrate may have a first surface and a second surface opposite to the first surface, the substrate including circuit patterns formed on the first surface. The through electrode penetrates the substrate and may be electrically connected to the circuit pattern, the through electrode including a first plug that extends from the first surface in a thickness direction of the substrate and a second plug that extends from the second surface in the thickness direction of the substrate so as to be connected to the first plug.

Abstract: An interposer chip may include a substrate, a plurality of upper terminals, a plurality of lower terminals, a first conductive pattern that electrically connects the first upper terminal to a first set of one or more lower terminals, a second conductive pattern that electrically connects the second upper terminal to a second set of one or more lower terminals and a cut test pattern disposed between the first conductive pattern and the second conductive pattern, the test pattern used for testing electrical characteristics of the first conductive pattern and the second conductive pattern.

Abstract: Disclosed are a method of managing a process and a process managing system in which a failure-generating process step can be quickly detected. The method of managing a process includes sequentially performing first to n-th (n is a natural number) process steps with respect to a plurality of wafers, the order that the plurality of wafers are processed in each of the n process steps are different from one another. Calculating characteristic parameter values for the plurality of wafers, calculating first to n-th relations that indicate relationships between the first to n-th process orders and the characteristic parameter values, performing a Fourier transform on the first to n-th relations so as to calculate first to n-th conversion relations, and determining the existence of patterns among the first to n-th relations using the first to n-th conversion relations.

Abstract: A test pattern includes a normal pattern, an abnormal pattern having predetermined defects, and a conductive line electrically connected to the normal pattern and electrically isolated from the abnormal pattern. Thus, a non-contact test process and a contact test process may be compatible with the single test pattern.

Abstract: A test pattern includes a normal pattern, an abnormal pattern having predetermined defects, and a conductive line electrically connected to the normal pattern and electrically isolated from the abnormal pattern. Thus, a non-contact test process and a contact test process may be compatible with the single test pattern.

Abstract: Disclosed are a method of managing a process and a process managing system in which a failure-generating process step can be quickly detected. The method of managing a process includes sequentially performing first to n-th (n is a natural number) process steps with respect to a plurality of wafers, the order that the plurality of wafers are processed in each of the n process steps are different from one another. Calculating characteristic parameter values for the plurality of wafers, calculating first to n-th relations that indicate relationships between the first to n-th process orders and the characteristic parameter values, performing a Fourier transform on the first to n-th relations so as to calculate first to n-th conversion relations, and determining the existence of patterns among the first to n-th relations using the first to n-th conversion relations.