Abstract: The present invention relates to a substrate treating apparatus. According to one embodiment of the present invention, a substrate treating apparatus comprises: a chamber; a susceptor located at an inner side of the chamber to support a substrate subject to a process; an electrode plate having a pre-set area and located at an upper area inside the chamber; an RF power supply providing power for plasma generation and connected to the susceptor; and a plasma control member located on a branched conducting wire branching from a conducting wire, through which the RF power supply is connected to the susceptor, and grounded.