Patents by Inventor Yeong-Shyang Lee
Yeong-Shyang Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120126235Abstract: In one aspect of the invention, the method of forming a TFT array panel includes forming a patterned first conductive layer on a substrate, forming a gate insulating layer on the patterned first conductive layer and the substrate, forming a patterned semiconductor layer on the gate insulating layer, forming a patterned second conductive layer, forming a patterned passivation layer on the patterned second conductive layer and the substrate, and forming a patterned transparent conductive layer on the patterned passivation layer.Type: ApplicationFiled: February 3, 2012Publication date: May 24, 2012Applicant: AU OPTRONICS CORPORATIONInventors: Ching-Chieh Shih, Yeong-Shyang Lee, Tsung-Yi Hsu, Feng-Yuan Gan
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Patent number: 8133773Abstract: In one aspect of the invention, the method of forming a TFT array panel includes forming a patterned first conductive layer on a substrate, forming a gate insulating layer on the patterned first conductive layer and the substrate, forming a patterned semiconductor layer on the gate insulating layer, forming a patterned second conductive layer, forming a patterned passivation layer on the patterned second conductive layer and the substrate, and forming a patterned transparent conductive layer on the patterned passivation layer.Type: GrantFiled: October 17, 2007Date of Patent: March 13, 2012Assignee: AU Optronics CorporationInventors: Ching-Chieh Shih, Yeong-Shyang Lee, Tsung-Yi Hsu, Feng-Yuan Gan
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Publication number: 20110155219Abstract: A thin film solar cell includes a substrate, a transparent electrode layer, a semiconductor layer, a back electrode layer, a positive electrode and a negative electrode. The semiconductor layer is formed on the transparent electrode layer and has grooves. The back electrode layer is formed on the semiconductor layer, in which formation of the semiconductor layer with the back electrode layer is patterned and the patterned formation with the transparent electrode layer form unit cells connected in series. The positive electrode is formed upon a front unit cell of the unit cells. The negative electrode is formed upon a last unit cell of the unit cells. The back electrode layer is formed to fill at least the grooves of the front unit cell and the last unit cell to directly connect with the transparent electrode layer. A method for fabricating a thin film solar cell is also provided.Type: ApplicationFiled: December 12, 2010Publication date: June 30, 2011Applicant: Du Pont Apollo LimitedInventors: Jia-Wei Ma, Chan-Ching Chang, Yeong-Shyang Lee, Hi-Ki Lam
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Patent number: 7888190Abstract: The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.Type: GrantFiled: July 10, 2008Date of Patent: February 15, 2011Assignee: Au Optronics Corp.Inventors: Kuo-Lung Fang, Wen-Ching Tsai, Yeong-Shyang Lee, Han-Tu Lin
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Publication number: 20090101913Abstract: A method of forming a thin film transistor (TFT) array panel, comprising the steps of: (i) forming a patterned first conductive layer, which includes a gate line and a shielding portion, on a substrate, (ii) forming a gate insulating layer on the patterned first conductive layer and the substrate, (iii) forming a patterned semiconductor layer on the gate insulating layer, (iv) forming a patterned second conductive layer, which includes a source electrode, and a drain electrode on the patterned semiconductor layer, and a data line that is electrically connected to the source electrode, (v) forming a patterned passivation layer on the patterned second conductive layer and the substrate, and (vi) forming a patterned transparent conductive layer on the patterned passivation layer.Type: ApplicationFiled: October 17, 2007Publication date: April 23, 2009Applicant: AU OPTRONICS CORPORATIONInventors: Ching-Chieh Shih, Yeong-Shyang Lee, Tsung-Yi Hsu, Feng-Yuan Gan
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Publication number: 20080268586Abstract: The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.Type: ApplicationFiled: July 10, 2008Publication date: October 30, 2008Applicant: AU OPTRONICS CORP.Inventors: Kuo-Lung FANG, Wen-Ching TSAI, Yeong-Shyang LEE, Han-Tu LIN
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Patent number: 7411212Abstract: The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.Type: GrantFiled: October 11, 2005Date of Patent: August 12, 2008Assignee: AU Optronics Corp.Inventors: Kuo-Lung Fang, Wen-Ching Tsai, Yeong-Shyang Lee, Han-Tu Lin
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Patent number: 7384831Abstract: A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate-insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSix layer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSix layer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSix layer.Type: GrantFiled: June 22, 2007Date of Patent: June 10, 2008Assignee: Au Optronics CorporationInventors: Wen-Ching Tsai, Yeong-Shyang Lee, Kuo-Yuan Tu, Han-Tu Lin
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Publication number: 20080009107Abstract: A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate-insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSix layer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSix layer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSix layer.Type: ApplicationFiled: June 22, 2007Publication date: January 10, 2008Inventors: Wen-Ching Tsai, Yeong-Shyang Lee, Kuo-Yuan Tu, Han-Tu Lin
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Patent number: 7247911Abstract: A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSix layer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSix layer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSix layer.Type: GrantFiled: September 6, 2005Date of Patent: July 24, 2007Assignee: Au Optronics CorporationInventors: Wen-Ching Tsai, Yeong-Shyang Lee, Kuo-Yuan Tu, Han-Tu Lin
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Publication number: 20060278872Abstract: The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.Type: ApplicationFiled: October 11, 2005Publication date: December 14, 2006Inventors: Kuo-Lung Fang, Wen-Ching Tsai, Yeong-Shyang Lee, Han-Tu Lin
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Publication number: 20060263949Abstract: A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSix layer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSix layer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSix layer.Type: ApplicationFiled: September 6, 2005Publication date: November 23, 2006Inventors: Wen-Ching Tsai, Yeong-Shyang Lee, Kuo-Yuan Tu, Han-Tu Lin