Patents by Inventor Yeong Song

Yeong Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9717715
    Abstract: A method for prevention or treatment of a cancer, comprising co-administering (a) an anti-c-Met antibody or an antigen-binding fragment thereof, and (b) at least one of lapatinib, regorafenib, vemurafenib or a combination thereof, to a subject in need thereof, and a pharmaceutical composition comprising (a) an anti-c-Met antibody or an antigen-binding fragment thereof, and (b) at least one of lapatinib, regorafenib, vemurafenib, or a combination thereof are provided.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: August 1, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Hyun Lee, Geun Woong Kim, Kyung Ah Kim, Hye Won Park, Ho Yeong Song, Young Mi Oh, Saet Byoul Lee, Ji Min Lee, Kwang Ho Cheong, Yun Ju Jeong, Mi Young Cho, Jae Hyun Choi, Yun Jeong Song, Yoon Aa Choi
  • Patent number: 9650443
    Abstract: There are provided a fusion protein formed by coupling of anti-c-Met antibody and VEGF-binding fragment, a bispecific antibody comprising the fusion protein, a polynucleotide encoding the fusion protein, a transformant comprising the polynucleotide, a pharmaceutical composition comprising the bispecific antibody as an active ingredient, and a method for preparing the bispecific antibody which is targeted at c-Met and VEGF at the same time, with improved anticancer and anti-angiogenesis effects, comprising coupling an anti-c-Met antibody with a VEGF-binding fragment.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: May 16, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yun Jeong Song, Ho Yeong Song, Seung Hyun Lee, Kyung Ah Kim, Yun Ju Jeong
  • Patent number: 9394367
    Abstract: An antibody or antigen binding fragment thereof that specifically binds to an epitope in a SEMA domain of c-Met protein, and pharmaceutical compositions, methods, kits, nucleic acids, and cells related thereto.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: July 19, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Kwang-ho Cheong, Kyung-ah Kim, Seung-hyun Lee, Ho-yeong Song, Yun-jeong Song, Young-mi Oh, Soo-yeon Jung, Mi-young Cho
  • Patent number: 9249221
    Abstract: Provided is a humanized and affinity-matured anti-c-Met antibody, a pharmaceutical composition including the antibody, and a method of preventing and/or treating c-Met-related disease using the antibody.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: February 2, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Hyun Lee, Kyung Ah Kim, Kwang Ho Cheong, Ho Yeong Song
  • Publication number: 20150140014
    Abstract: A method for prevention or treatment of a cancer, comprising co-administering (a) an anti-c-Met antibody or an antigen-binding fragment thereof, and (b) at least one of lapatinib, regorafenib, vemurafenib or a combination thereof, to a subject in need thereof, and a pharmaceutical composition comprising (a) an anti-c-Met antibody or an antigen-binding fragment thereof, and (b) at least one of lapatinib, regorafenib, vemurafenib, or a combination thereof are provided.
    Type: Application
    Filed: November 15, 2013
    Publication date: May 21, 2015
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seung Hyun LEE, Geun Woong Kim, Kyung Ah Kim, Hye Won Park, Ho Yeong Song, Young Mi Oh, Saet Byoul Lee, Ji Min Lee, Kwang Ho Cheong, Yun Ju Jeong, Mi Young Cho, Jae Hyun Choi, Yun Jeong Song, Yoon Aa Choi
  • Publication number: 20140294837
    Abstract: There are provided a fusion protein formed by coupling of anti-c-Met antibody and VEGF-binding fragment, a bispecific antibody comprising the fusion protein, a polynucleotide encoding the fusion protein, a transformant comprising the polynucleotide, a pharmaceutical composition comprising the bispecific antibody as an active ingredient, and a method for preparing the bispecific antibody which is targeted at c-Met and VEGF at the same time, with improved anticancer and anti-angiogenesis effects, comprising coupling an anti-c-Met antibody with a VEGF-binding fragment.
    Type: Application
    Filed: March 28, 2014
    Publication date: October 2, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yun Jeong SONG, Ho Yeong SONG, Seung Hyun LEE, Kyung Ah KIM, Yun Ju JEONG
  • Publication number: 20140294814
    Abstract: Provided is a humanized and affinity-matured anti-c-Met antibody, a pharmaceutical composition including the antibody, and a method of preventing and/or treating c-Met-related disease using the antibody.
    Type: Application
    Filed: March 31, 2014
    Publication date: October 2, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: SEUNG HYUN LEE, KYUNG AH KIM, KWANG HO CHEONG, HO YEONG SONG
  • Publication number: 20140154251
    Abstract: An anti-c-Met antibody or antibody fragment and pharmaceutical composition comprising same, as well as a method for preventing and treating cancer by administering the antibody to a subject are provided.
    Type: Application
    Filed: November 15, 2013
    Publication date: June 5, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seung Hyun LEE, Geun Woong Kim, Kyung Ah Kim, Hye Won Park, Ho Yeong Song, Young Mi Oh, Saet Byoul Lee, Ji Min Lee, Kwang Ho Cheong, Yun Ju Jeong, Mi Young Cho, Jae Hyun Choi, Yun Jeong Song, Yoon Aa Choi
  • Publication number: 20070201016
    Abstract: A plasma equipment seasoning method. The seasoning method comprising the steps of measuring the ratio of optical emission intensity of silicon oxide (SiOx)-based chemical species to optical emission intensity of carbon fluoride compound (CFy)-based chemical species present in a process chamber of plasma equipment before operating the plasma equipment to perform a plasma process, determining whether the value of the measured optical emission intensity ratio is within a predetermined range of normal state or not, and, when reaction gas to be used in the plasma process is supplied into the process chamber based on the result of determination such that the value of the measured optical emission intensity ratio is within the predetermined range of normal state, seasoning the interior of the process chamber to change the ratio of components of the reaction gas, and thus, to change the optical emission intensity ratio.
    Type: Application
    Filed: December 21, 2004
    Publication date: August 30, 2007
    Applicant: ADAPTIVE PLASMA TECHNOLOGY CORP.
    Inventors: Yeong Song, Sang Oh, Sheung Kim, Nam Kim
  • Publication number: 20070151947
    Abstract: Disclosed herein is a plasma chamber setting method for generating plasma in a plasma chamber. A plurality of plasma source coils, including a first plasma source coil, a second plasma source coil having an etching rate at the center part thereof higher than that of the first plasma source coil, and a third plasma source coil having an etching rate at the edge part thereof higher than that of the first plasma source coil, are prepared. The first plasma source coil is disposed on the plasma chamber, and a test wafer is etched. The etching rate for each position of the test wafer is analyzed, and first plasma source coil is replaced with the second plasma source coil or the third plasma source coil based on the analysis results.
    Type: Application
    Filed: December 22, 2004
    Publication date: July 5, 2007
    Inventors: Yeong Song, Sang Ryong Oh, Sheung Kim, Nam Kim, Young Oh, Do Hyung Lee
  • Patent number: 6839126
    Abstract: A photolithography process with multiple exposures is provided. A photomask is placed and aligned above a wafer having a photoresist formed thereon at a predetermined distance. Multiple exposures are sequentially performed on the photoresist through the photomask. Each of the multiple exposures is provided with a respective illuminating setting that is optimized for one duty ratio of the photomask. Thereby, an optimum through-pitch performance for pattern transfer from the photomask unto the photoresist is obtained. Then, a development is performed on the photoresist.
    Type: Grant
    Filed: January 3, 2002
    Date of Patent: January 4, 2005
    Assignee: United Microelectronics Corp.
    Inventors: Yeong-Song Yen, I-Hsiung Huang, Jiunn-Ren Hwang, Kuei-Chun Hung, Ching-Hsu Chang
  • Patent number: 6833318
    Abstract: A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.
    Type: Grant
    Filed: November 20, 2002
    Date of Patent: December 21, 2004
    Assignee: United Microelectronics Corp.
    Inventors: Chun-Jen Weng, Juan-Yi Chen, Hong-Tsz Pan, Cedric Lee, Der-Yuan Wu, Jackson Lin, Yeong-Song Yen, Lawrence Lin, Ying-Chung Tseng
  • Publication number: 20040167074
    Abstract: Mature FLINT protein (mFLINT) binds FasL and LIGHT, and prevents FasL-Fas interaction. mFLINT inhibits FasL-Fas-mediated apoptotic and proinflammatory activity, and is useful in treating disorders associated with abnormal apoptosis and inflammation. The invention provides the amino acid and nucleotide sequences of FLINT and mature FLINT. The preparation and characterization of transgenic animals that express FLINT is disclosed. Therapeutic compositions and methods of treatment utilizing mFLINT also are provided.
    Type: Application
    Filed: March 4, 2004
    Publication date: August 26, 2004
    Inventors: Thomas Frank Bumol, Shenshen Dou, Andrew Lawrence Glasebrook, Songqing Na, Ho Yeong Song, Steven Harold Zuckerman
  • Publication number: 20040142333
    Abstract: The present invention provides nucleic acid sequences encoding novel human proteins. These novel nucleic acids are useful for constructing the claimed DNA vectors and host cells of the invention and for preparing the claimed recombinant proteins and antibodies that are useful in the claimed methods and medical uses.
    Type: Application
    Filed: March 27, 2003
    Publication date: July 22, 2004
    Inventors: Deshun Lu, Ho Yeong Song, Eric Wen Su, He Wang
  • Publication number: 20040097069
    Abstract: A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.
    Type: Application
    Filed: November 20, 2002
    Publication date: May 20, 2004
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Jen Weng, Juan-Yi Chen, Hong-Tsz Pan, Cedric Lee, Der-Yuan Wu, Jackson Lin, Yeong-Song Yen, Lawrence Lin, Ying-Chung Tseng
  • Publication number: 20040043022
    Abstract: Novel methods are provided for the treatment or prevention of T cell mediated conditions in a mammal that comprise administering to said mammal a therapeutically effective amount of a pharmaceutical composition comprising at least one DR6 agonist or DR6 antagonist.
    Type: Application
    Filed: October 16, 2002
    Publication date: March 4, 2004
    Inventors: Josef Georg Heuer, Jinqi Liu, Songqing Na, Ho Yeong Song, Derek Di Yang
  • Publication number: 20030123039
    Abstract: A photolithography process with multiple exposures is provided. A photomask is placed and aligned above a wafer having a photoresist formed thereon at a predetermined distance. Multiple exposures are sequentially performed on the photoresist through the photomask. Each of the multiple exposures is provided with a respective illuminating setting that is optimized for one duty ratio of the photomask. Thereby, an optimum through-pitch performance for pattern transfer from the photomask unto the photoresist is obtained. Then, a development is performed on the photoresist.
    Type: Application
    Filed: January 3, 2002
    Publication date: July 3, 2003
    Inventors: Yeong-Song Yen, I-Hsiung Huang, Jiunn-Ren Hwang, Kuei-Chun Hung, Ching-Hsu Chang
  • Publication number: 20030096496
    Abstract: A method of forming a dual damascene structure. A substrate has a conductive line thereon. A first dielectric layer, a second dielectric layer, a base anti-reflection coating and a spin-on dielectric layer are sequentially formed over the substrate. The spin-on dielectric layer, the base anti-reflection coating and the second dielectric layer are patterned to form an opening in the second dielectric layer and a first trench in the spin-on dielectric layer and the base anti-reflection coating. Using the spin-on dielectric layer and the base anti-reflection coating as a mask, the exposed first dielectric layer within the opening is removed to form a via opening that exposes a portion of the substrate. The exposed second dielectric layer within the first trench is also removed to form a second trench that exposes a portion of the first dielectric layer. Thereafter, the spin-on dielectric layer and the base anti-reflection coating are removed.
    Type: Application
    Filed: November 20, 2001
    Publication date: May 22, 2003
    Inventors: I-Hsiung Huang, Jiunn-Ren Hwang, Kuei-Chun Hung, Yeong-Song Yen
  • Patent number: 6391757
    Abstract: A dual damascene process involves forming a first passivation layer, a first dielectric layer and a second passivation layer on a substrate of a semiconductor wafer. A first lithography and etching process is performed to form at least one via hole in the second passivation layer and the first dielectric layer. Thereafter, a second dielectric layer and a third passivation layer are formed on the surface of the semiconductor wafer followed by performing a second lithography and etching process to form at least one trench in the third passivation layer and the second dielectric layer. The trench and the via hole together construct a dual damascene structure. Finally, a barrier layer and a metal layer are formed on the surface of the semiconductor wafer, and a chemical-mechanical-polishing (CMP) process is performed to complete the dual damascene process.
    Type: Grant
    Filed: June 6, 2001
    Date of Patent: May 21, 2002
    Assignee: United Microelectronics Corp.
    Inventors: I-Hsiung Huang, Jiunn-Ren Hwang, Yeong-Song Yen, Ching-Hsu Chang
  • Patent number: 6107074
    Abstract: The invention provides methods and compositions relating to a novel human tumor necrosis factor receptor associated factor number two associated kinase protein. The invention provides hybridization probes and primers capable of hybridizing with the disclosed gene, nucleic acids encoding the kinase, methods of making the kinase proteins, and methods of using the compositions in diagnosis and drug screening.
    Type: Grant
    Filed: November 5, 1999
    Date of Patent: August 22, 2000
    Assignee: Tularik Inc.
    Inventors: Yeong Song, Mike Rothe