Patents by Inventor YeongJun Lim

YeongJun Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TUNNELING FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
    Publication number: 20220310828
    Abstract: A TEFT includes a drain region on a substrate, a channel on the drain region, a dipole formation layer (DFL) on the channel, a dipole formation layer (DFL) on the channel, a source region on the DFL, a gate insulation pattern surrounding the channel, and a gate electrode surrounding the gate insulation pattern. The DFL contacts the channel and the source region and form dipoles between the channel and the source region.
    Type: Application
    Filed: March 22, 2022
    Publication date: September 29, 2022
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: MinCheol Shin, YeongJun Lim, Junbeom Seo