Abstract: A semiconductor device includes a memory device and a controller configured to perform an erase operation on the memory device, perform a correction operation for a threshold voltage of a deep-erased cell, and perform an erase verify operation by identifying whether threshold voltages of a plurality of cells of the memory device fall within a predefined range.

Abstract: An operating method of a storage controller which communicates with a non-volatile memory device is provided. The method includes determining whether a program/erase (P/E) count of a target page including a plurality of sectors is greater than or equal to a P/E threshold value; based on determining that the P/E count of the target page is greater than or equal to the P/E threshold value, fetching the target page; determining a first sector having high reliability and a second sector having low reliability from the plurality of sectors of the fetched target page; and expanding a second parity area of the second sector by moving a margin region in a first parity area of the first sector to the second parity area of the second sector.

Abstract: An operating method of a semiconductor device including a controller and a non-volatile memory device operating under control of the controller is provided. The operating method includes determining, by the controller, whether the non-volatile memory device satisfies a block program condition; based on the non-volatile memory device satisfying the block program condition, performing a block program operation a plurality of times; and based the non-volatile memory device not satisfying the block program condition, performing an erase operation.

Abstract: An operating method of a storage controller which communicates with a non-volatile memory device is provided. The method includes determining whether a program/erase (P/E) count of a target page including a plurality of sectors is greater than or equal to a P/E threshold value; based on determining that the P/E count of the target page is greater than or equal to the P/E threshold value, fetching the target page; determining a first sector having high reliability and a second sector having low reliability from the plurality of sectors of the fetched target page; and expanding a second parity area of the second sector by moving a margin region in a first parity area of the first sector to the second parity area of the second sector.

Abstract: A semiconductor device includes a memory device and a controller configured to perform an erase operation on the memory device, perform a correction operation for a threshold voltage of a deep-erased cell, and perform an erase verify operation by identifying whether threshold voltages of a plurality of cells of the memory device fall within a predefined range.

Abstract: An operating method of a semiconductor device including a controller and a non-volatile memory device operating under control of the controller is provided. The operating method includes determining, by the controller, whether the non-volatile memory device satisfies a block program condition; based on the non-volatile memory device satisfying the block program condition, performing a block program operation a plurality of times; and based the non-volatile memory device not satisfying the block program condition, performing an erase operation.