Patents by Inventor Yeonjoon Park

Yeonjoon Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10256305
    Abstract: An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: April 9, 2019
    Assignee: The United States of America as represented by the Administrator of NASA
    Inventors: Sang Hyouk Choi, Yeonjoon Park, Glen C. King, Hyun-Jung Kim, Kunik Lee
  • Publication number: 20190087145
    Abstract: A contextual presentation system is disclosed. The contextual presentation system may include a communication device. Further, the communication device may be configured for receiving the at least one presentation content from an external content providing device. Further, the contextual presentation system may include a storage device configured for storing each of at least one presentation content and at least one presentation criteria. Further, the contextual presentation system may include at least one sensor configured for sensing at least one contextual data associated with the contextual presentation system. Further, the contextual presentation system may include a processing device communicatively coupled with each of the communication device, the storage device and the at least one sensor. Further, the contextual presentation system may include at least one presentation device configured for presenting the at least one presentation content based on the analyzing.
    Type: Application
    Filed: September 19, 2018
    Publication date: March 21, 2019
    Inventors: Yeonjoon Park, Bryan Petty, Yeon Tae Chung, Rachel McCown
  • Patent number: 9835570
    Abstract: An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: December 5, 2017
    Assignee: The United States of America as represented by the Administrator of NASA
    Inventors: Yeonjoon Park, Hyun Jung Kim, Jonathan R. Skuza, Kunik Lee, Glen C. King, Sang Hyouk Choi
  • Patent number: 9824885
    Abstract: One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: November 21, 2017
    Assignee: The Unites States of America as represented by the Administrator of NASA
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Patent number: 9711680
    Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: July 18, 2017
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Publication number: 20170179233
    Abstract: An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.
    Type: Application
    Filed: March 3, 2017
    Publication date: June 22, 2017
    Inventors: Sang Hyouk Choi, Yeonjoon Park, Glen C. King, Hyun-Jung Kim, Kunik Lee
  • Patent number: 9614026
    Abstract: An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: April 4, 2017
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Sang Hyouk Choi, Yeonjoon Park, Glen C. King, Hyun-Jung Kim, Kunik Lee
  • Publication number: 20170004962
    Abstract: One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.
    Type: Application
    Filed: September 13, 2016
    Publication date: January 5, 2017
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Publication number: 20160380148
    Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
    Type: Application
    Filed: September 13, 2016
    Publication date: December 29, 2016
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Patent number: 9455374
    Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: September 27, 2016
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Patent number: 9446953
    Abstract: Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.
    Type: Grant
    Filed: December 4, 2008
    Date of Patent: September 20, 2016
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Jae-Woo Kim, Sang H. Choi, Sr., Peter T. Lillehei, Sang-Hyon Chu, Yeonjoon Park, Glen C. King, James R. Elliott
  • Patent number: 9449818
    Abstract: One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: September 20, 2016
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Publication number: 20160225476
    Abstract: Systems, methods, and devices of the various embodiments described herein enable an energy conversion system comprising a radioactive element for generating conduction-band electrons in an avalanche cell and generating heat, wherein the conduction-band electrons are provided to an anode to generate avalanche cell power, and the heat is provided to a thermoelectric generator to generate thermoelectric power. In an embodiment, the avalanche cell is irradiated with gamma rays, which excite electrons within the avalanche cell, generating a current. In an additional embodiment, the thermoelectric power and avalanche cell power can comprise a dual power system.
    Type: Application
    Filed: February 3, 2016
    Publication date: August 4, 2016
    Inventors: Sang Hyouk Choi, Kunik LEE, Yeonjoon PARK, Hyun Jung KIM
  • Patent number: 9046418
    Abstract: A spectrometer that includes a grating that disperses light via Fresnel diffraction according to wavelength onto a sensing area that coincides with an optical axis plane of the grating. The sensing area detects the dispersed light and measures the light intensity associated with each wavelength of the light. Because the spectrometer utilizes Fresnel diffraction, it can be miniaturized and packaged as an integrated circuit.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: June 2, 2015
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Sang Hyouk Choi, Yeonjoon Park
  • Publication number: 20150078526
    Abstract: An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blende structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.
    Type: Application
    Filed: September 12, 2014
    Publication date: March 19, 2015
    Inventors: Yeonjoon Park, Hyun Jung KIM, Jonathan R. SKUZA, Kunik LEE, Glen C. KING, Sang Hyouk CHOI
  • Patent number: 8982355
    Abstract: Disclosed is a system and method for characterizing optical materials, using steps and equipment for generating a coherent laser light, filtering the light to remove high order spatial components, collecting the filtered light and forming a parallel light beam, splitting the parallel beam into a first direction and a second direction wherein the parallel beam travelling in the second direction travels toward the material sample so that the parallel beam passes through the sample, applying various physical quantities to the sample, reflecting the beam travelling in the first direction to produce a first reflected beam, reflecting the beam that passes through the sample to produce a second reflected beam that travels back through the sample, combining the second reflected beam after it travels back though the sample with the first reflected beam, sensing the light beam produced by combining the first and second reflected beams, and processing the sensed beam to determine sample characteristics and properties.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: March 17, 2015
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Sang Hyouk Choi, Yeonjoon Park
  • Patent number: 8913124
    Abstract: A lock-in imaging system is configured for detecting a disturbance in air. The system includes an airplane, an interferometer, and a telescopic imaging camera. The airplane includes a fuselage and a pair of wings. The airplane is configured for flight in air. The interferometer is operatively disposed on the airplane and configured for producing an interference pattern by splitting a beam of light into two beams along two paths and recombining the two beams at a junction point in a front flight path of the airplane during flight. The telescopic imaging camera is configured for capturing an image of the beams at the junction point. The telescopic imaging camera is configured for detecting the disturbance in air in an optical path, based on an index of refraction of the image, as detected at the junction point.
    Type: Grant
    Filed: February 3, 2011
    Date of Patent: December 16, 2014
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Yeonjoon Park, Sang Hyouk Choi, Glen C. King, James R. Elliott, Albert L. Dimarcantonio
  • Patent number: 8909491
    Abstract: Provided is a method for measuring multi-point interferometric angle changes beginning with an interferometric device capable of measuring at least one main point and at least one reference point. The method includes recording interferometric intensity changes on two or more spots using the main point and the reference point, and determining a sequence having a plurality of peak, local maximas and a plurality of valley, local minimas. The method includes sampling a first, partial sequence and comparing it to a neighboring, partial sequence using a perturbation analysis and additional calculation(s) to compile all phase angle changes for all measured points. Also provided is a computer implemented method to enable nanometer resolution sensitivity in a noisy signal and for characterization of a material in an interferometric device.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: December 9, 2014
    Assignee: The United States of America as represented by the Adminstrator of the National Aeronautics and Space Adminstration
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Publication number: 20140339580
    Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
    Type: Application
    Filed: May 16, 2014
    Publication date: November 20, 2014
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Publication number: 20140264325
    Abstract: One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.
    Type: Application
    Filed: March 11, 2014
    Publication date: September 18, 2014
    Applicant: U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Yeonjoon Park, Sang Hyouk Choi